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1.发明授权Method of fabricating a MOS transistor with a drain extension and corresponding transistor 有权制造具有漏极延伸的MOS晶体管和对应的晶体管的方法公开(公告)号：US06800514B2
公开(公告)日：2004-10-05
申请号：US10184036
申请日：2002-06-27
申请人： Thierry Schwartzmann , Hervé Jaouen
发明人： Thierry Schwartzmann , Hervé Jaouen
IPC分类号： H01L21338
CPC分类号： H01L29/66659 , H01L29/7835
摘要： A MOS transistor with a drain extension includes an isolation block on the upper surface of a semiconductor substrate. The isolation block has a first sidewall next to the gate of the transistor, and a second sidewall that is substantially parallel to the first sidewall. The isolation block further includes a drain extension zone in the substrate under the isolation block, and a drain region in contact with the drain extension zone. The drain region is in the substrate but is not covered by the isolation block.
摘要翻译： 具有漏极延伸的MOS晶体管包括在半导体衬底的上表面上的隔离块。 隔离块具有靠近晶体管的栅极的第一侧壁和基本上平行于第一侧壁的第二侧壁。 隔离块还包括在隔离块下方的衬底中的漏极延伸区域和与漏极延伸区域接触的漏极区域。 漏极区在衬底中，但不被隔离块覆盖。
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2.发明授权Integrated sound transmitter and receiver, and corresponding method for making same 有权集成声音发射器和接收器，以及相应的制作方法公开(公告)号：US06670686B2
公开(公告)日：2003-12-30
申请号：US10149088
申请日：2002-09-16
IPC分类号： H01L2982
CPC分类号： G10K9/13 , G01D5/242 , G01L9/0042
摘要： A transmitter or receiver includes several transducers formed opposite an aperture in a package. Each transducer includes a deformable semiconductor membrane that is capable of conducting current. The membrane is separated from a substrate zone by a cavity. This allows the membrane to deform due to the effect of an acoustic pressure or of a Lorenz force.
摘要翻译： 发射器或接收器包括与封装中的孔相对的多个换能器。 每个换能器包括能够传导电流的可变形的半导体膜。 膜通过空腔与基底区域分离。 这允许膜由于声压或洛伦茨力的作用而变形。
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公开(公告)号：US07038285B2
公开(公告)日：2006-05-02
申请号：US10149093
申请日：2000-12-06
IPC分类号： H01L29/82
CPC分类号： G10K9/13 , G01D5/242 , G01L9/0042 , Y10T428/1157 , Y10T428/1171 , Y10T428/19
摘要： A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of the capacitor includes a doped region of a semiconductor substrate. A layer of a gaseous dielectric separates the two plates. The membrane deforms due to the effect of the Lorentz force generated by a magnetic field lying in the plane of the membrane and perpendicular to the lines of current being conducted therethrough. In addition, a process for fabricating this magnetic sensor is also provided as well as a device for measuring a magnetic field using the magnetic sensor.
摘要翻译： 磁传感器包括由导电材料制成的薄的可变形膜，该导电材料形成电容器的第一板，其导通电流。 电容器的第二电容器板包括半导体衬底的掺杂区域。 气体介质层分离两个板。 由于由位于膜的平面中的磁场产生的洛伦兹力的作用并且垂直于通过其传导的电流线，膜变形。 此外，还提供了用于制造该磁传感器的工艺以及使用该磁传感器来测量磁场的装置。
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公开(公告)号：US07396736B2
公开(公告)日：2008-07-08
申请号：US11214248
申请日：2005-08-29
IPC分类号： H01L29/82
CPC分类号： G10K9/13 , G01D5/242 , G01L9/0042 , Y10T428/1157 , Y10T428/1171 , Y10T428/19
摘要： A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of the capacitor includes a doped region of a semiconductor substrate. A layer of a gaseous dielectric separates the two plates. The membrane deforms due to the effect of the Lorentz force generated by a magnetic field lying in the plane of the membrane and perpendicular to the lines of current being conducted therethrough. In addition, a process for fabricating this magnetic sensor is also provided as well as a device for measuring a magnetic field using the magnetic sensor.
摘要翻译： 磁传感器包括由导电材料制成的薄的可变形膜，该导电材料形成电容器的第一板，其导通电流。 电容器的第二电容器板包括半导体衬底的掺杂区域。 气体介质层分离两个板。 由于由位于膜的平面中的磁场产生的洛伦兹力的作用并且垂直于通过其传导的电流线，膜变形。 此外，还提供了用于制造该磁传感器的工艺以及使用该磁传感器来测量磁场的装置。
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公开(公告)号：US06593204B2
公开(公告)日：2003-07-15
申请号：US09915753
申请日：2001-07-26
申请人： Hervé Jaouen , Vincent Le Goascoz
发明人： Hervé Jaouen , Vincent Le Goascoz
IPC分类号： H01L2176
CPC分类号： H01L21/76264 , H01L21/76275 , H01L21/76278
摘要： A method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and resting on another insulative material includes forming a layer of a first insulative material, and forming on the top main surface of the first semiconductor substrate a thin semiconductor layer forming the islet of semiconductor material. The thin semiconductor layer can be selectively etched relative to the first semiconductor substrate. A layer of a second insulative material is formed on exposed surfaces of the islet of semiconductor material and the thin semiconductor layer. The method further includes removing the first semiconductor substrate.
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6.发明授权Method of repairing an integrated electronic circuit using a formed electrical isolation 有权使用形成的电隔离来修复集成电子电路的方法公开(公告)号：US07029927B2
公开(公告)日：2006-04-18
申请号：US10778323
申请日：2004-02-13
IPC分类号： H01L21/00
CPC分类号： H01L21/76807 , H01L21/76801 , H01L23/522 , H01L2924/0002 , H01L2924/00
摘要： A method of repairing a defect in an integrated electronic circuit caused by an incorrect lithographic mask includes the formation of an electrical isolation between two conducting parts of the circuit. The electrical isolation is obtained by at least partly filling, with an electrically insulating material, a volume hollowed out beforehand which would otherwise, and incorrectly, form an electrical connection between the two conducting parts. To do this, a mask having an aperture revealing the hollowed out volume is formed on the circuit, and the mask used to direct the filling of the electrically insulating material and correction of the lithography defined defect.
摘要翻译： 修复由不正确的光刻掩模引起的集成电子电路中的缺陷的方法包括在电路的两个导电部分之间形成电隔离。 电隔离是通过用电绝缘材料至少部分地填充预先挖空的体积获得的，否则并且不正确地在两个导电部件之间形成电连接。 为此，在电路上形成具有露出掏空体积的孔径的掩模，以及用于引导电绝缘材料的填充的掩模和校正光刻限定的缺陷。
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7.发明授权公开(公告)号：US06756279B2
公开(公告)日：2004-06-29
申请号：US10209190
申请日：2002-07-30
申请人： Olivier Menut , Hervé Jaouen , Guillaume Bouche
发明人： Olivier Menut , Hervé Jaouen , Guillaume Bouche
IPC分类号： H01L218228
CPC分类号： H01L29/66272 , H01L21/8249
摘要： A method for manufacturing a contact between a semiconductor substrate and a doped polysilicon layer deposited on the substrate with an interposed insulating layer, wherein elements adapted to making the insulating layer permeable to the migration of dopants from the polysilicon layer to the substrate are implanted.
摘要翻译： 一种用于制造半导体衬底和沉积在具有中间绝缘层的衬底上的掺杂多晶硅层之间的接触的方法，其中植入适于使掺杂剂从多晶硅层迁移至衬底的绝缘层可渗透的元件。
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公开(公告)号：US06208551B1
公开(公告)日：2001-03-27
申请号：US09425763
申请日：1999-10-22
申请人： Hervé Jaouen , Richard Ferrant
发明人： Hervé Jaouen , Richard Ferrant
IPC分类号： G11C1124
CPC分类号： G11C11/401
摘要： A DRAM made in monolithic form, the cells of which each include a MOS transistor and a capacitor, a second electrode of which is common to all cells of a same row and is covered with an insulator, the insulator being coated with independent conductive elements distributed on a same horizontal plane, two neighboring elements being biased to respective high and low levels.
摘要翻译： 以单体形式制造的DRAM，其单元包括MOS晶体管和电容器，其第二电极对同一行的所有电池是共同的并且被绝缘体覆盖，绝缘体涂覆有独立的导电元件分布 在相同的水平面上，两个相邻元件被偏置到相应的高和低电平。
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