公开(公告)号：US07915165B2

公开(公告)日：2011-03-29

申请号：US12662384

申请日：2010-04-14

Applicant: Takashi Ozaki ,  Kenichi Suzaki

Inventor： Takashi Ozaki ,  Kenichi Suzaki

IPC: H01L21/44

CPC classification number: H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

Abstract: A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

Abstract translation: 用于支撑晶片（1）的支撑部分（28）凸形地形成在船21的支撑槽（25）的接收部分（26）的中心。在船（21）的船装载时， ，其中分别由所述支撑部分（28）接收的晶片（1）从待机室（33）到处理室（14）对准，所述备用室（33）和处理室（14）中的压力为 设定为200帕斯卡以上，3000帕斯卡以下。 通过使用支撑部分从接收部分向上支撑晶片，即使在晶片的支撑表面和支撑部分之间的减小的压力下，晶片上的膜的剥离发生在晶片上， 剥离被接收部分捕获，因此防止颗粒直接在接收部分的正下方粘附到晶片的IC制造表面。

公开(公告)号：US20100201055A1

公开(公告)日：2010-08-12

申请号：US12662384

申请日：2010-04-14

Applicant: Takashi Ozaki ,  Kenichi Suzaki

Inventor： Takashi Ozaki ,  Kenichi Suzaki

IPC: B25B11/00

CPC classification number: H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

Abstract: A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

公开(公告)号：US20060205213A1

公开(公告)日：2006-09-14

申请号：US10517765

申请日：2003-06-26

Applicant: Takashi Ozaki ,  Kenichi Suzaki

Inventor： Takashi Ozaki ,  Kenichi Suzaki

IPC: H01L21/44 ,  C23C16/00

CPC classification number: H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

Abstract: A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

Abstract translation: 用于支撑晶片（1）的支撑部分（28）凸形地形成在船21的支撑槽（25）的接收部分（26）的中心。在船（21）的船装载时， ，其中分别由所述支撑部分（28）接收的晶片（1）从待机室（33）到处理室（14）对准，所述备用室（33）和处理室（14）中的压力为 设定为200帕斯卡以上，3000帕斯卡以下。 通过使用支撑部分从接收部分向上支撑晶片，即使在晶片的支撑表面和支撑部分之间的减小的压力下，晶片上的膜的剥离发生在晶片上， 剥离被接收部分捕获，因此防止颗粒直接在接收部分的正下方粘附到晶片的IC制造表面。

公开(公告)号：US20110131804A1

公开(公告)日：2011-06-09

申请号：US12929444

申请日：2011-01-25

Applicant: Takashi Ozaki ,  Kenichi Suzaki

Inventor： Takashi Ozaki ,  Kenichi Suzaki

IPC: H05K3/36

CPC classification number: H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

Abstract: A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

公开(公告)号：US08211798B2

公开(公告)日：2012-07-03

申请号：US12929444

申请日：2011-01-25

Applicant: Takashi Ozaki ,  Kenichi Suzaki

Inventor： Takashi Ozaki ,  Kenichi Suzaki

IPC: H01L21/44

CPC classification number: H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

Abstract: A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

Abstract translation: 用于支撑晶片（1）的支撑部分（28）凸形地形成在船21的支撑槽（25）的接收部分（26）的中心。在船（21）的船装载时， ，其中分别由所述支撑部分（28）接收的晶片（1）从待机室（33）到处理室（14）对准，所述备用室（33）和处理室（14）中的压力为 设定为200帕斯卡以上，3000帕斯卡以下。 通过使用支撑部分从接收部分向上支撑晶片，即使在晶片的支撑表面和支撑部分之间的减小的压力下，晶片上的膜的剥离发生在晶片上， 剥离被接收部分捕获，因此防止颗粒直接在接收部分的正下方粘附到晶片的IC制造表面。

公开(公告)号：US07737034B2

公开(公告)日：2010-06-15

申请号：US10517765

申请日：2003-06-26

Applicant: Takashi Ozaki ,  Kenichi Suzaki

Inventor： Takashi Ozaki ,  Kenichi Suzaki

IPC: H01L21/44

CPC classification number: H01L21/67309 ,  C23C16/4401 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67098 ,  H01L21/67253 ,  Y10S269/903 ,  Y10T29/49126

Abstract: A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.

Abstract translation: 用于支撑晶片（1）的支撑部分（28）凸形地形成在船21的支撑槽（25）的接收部分（26）的中心。在船（21）的船装载时， ，其中分别由所述支撑部分（28）接收的晶片（1）从待机室（33）到处理室（14）对准，所述备用室（33）和处理室（14）中的压力为 设定为200帕斯卡以上，3000帕斯卡以下。 通过使用支撑部分从接收部分向上支撑晶片，即使在晶片的支撑表面和支撑部分之间的减小的压力下，晶片上的膜的剥离发生在晶片上， 剥离被接收部分捕获，因此防止颗粒直接在接收部分的正下方粘附到晶片的IC制造表面。

公开(公告)号：US06720274B2

公开(公告)日：2004-04-13

申请号：US10291474

申请日：2002-11-12

Applicant: Takashi Ozaki ,  Kenichi Suzaki ,  Norikazu Mizuno

Inventor： Takashi Ozaki ,  Kenichi Suzaki ,  Norikazu Mizuno

IPC: H01L2131

CPC classification number: H01L21/67109 ,  Y10S414/135 ,  Y10S414/141 ,  Y10S438/935 ,  Y10S438/941 ,  Y10T29/41

Abstract: A semiconductor device fabricating method includes the steps of loading one or more substrates into a boat disposed in a waiting room positioned next to a reaction furnace; vacuum-evacuating the waiting room to a vacuum state at a base pressure; loading the boat into the reaction furnace at a first ambient pressure; and recovering a temperature of the reaction furnace at a second ambient pressure. The first or the second ambient pressure is greater than the vacuum state but less than the atmospheric pressure. Further, the method includes the step of increasing the temperature of the one or more substrates at a third ambient pressure, and also the third ambient pressure is greater than the base pressure but less than the atmospheric pressure.

Abstract translation: 半导体器件制造方法包括以下步骤：将一个或多个衬底装载到设置在靠近反应炉的等候室中的舟皿中; 将候车室真空抽真空至基本压力的真空状态; 在第一环境压力下将船装载到反应炉中; 并在第二环境压力下回收反应炉的温度。 第一或第二环境压力大于真空状态但小于大气压力。 此外，该方法包括在第三环境压力下增加一个或多个基板的温度，并且第三环境压力大于基础压力但小于大气压力的步骤。

公开(公告)号：US20070259532A1

公开(公告)日：2007-11-08

申请号：US10572396

申请日：2004-09-17

Applicant: Kenichi Suzaki ,  Jie Wang

Inventor： Kenichi Suzaki ,  Jie Wang

IPC: H01L21/205 ,  C23C16/44 ,  H01L21/31

CPC classification number: C23C16/463 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/4411 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S438/905

Abstract: Disclosed is a producing method of a semiconductor device comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed, and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

Abstract translation: 公开了一种半导体器件的制造方法，包括：将基板装载到反应炉中; 在反应炉中在基板上形成膜; 在形成膜之后从反应炉中卸载基板，并且在基板卸载之后在基板不存在于反应炉中的状态下强制冷却反应炉内部。

公开(公告)号：US08231731B2

公开(公告)日：2012-07-31

申请号：US13098993

申请日：2011-05-02

Applicant: Kenichi Suzaki ,  Jie Wang

Inventor： Kenichi Suzaki ,  Jie Wang

IPC: C30B31/10 ,  C23C16/00

CPC classification number: C23C16/463 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/4411 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S438/905

Abstract: A process for producing a semiconductor device, comprising the steps of conducting film formation on substrate (10) in reactor (1); and unloading the substrate (10) after film formation from the reactor (1) and thereafter effecting forced air cooling of the interior of the reactor (1) while the substrate (10) is absent in the reactor (1). The stress of deposited film adhering in the reactor (1) is increased over that exhibited at air cooling without blower so as to positively generate thermal stress with the result that the deposited film would undergo forced cracking over that exhibited at air cooling without blower. Microparticles scattered by the cracking are efficiently discharged from the reactor forcibly through purging in the reactor in the state of atmospheric pressure.

Abstract translation: 一种制造半导体器件的方法，包括以下步骤：在反应器（1）中的衬底（10）上形成膜; 以及在成膜后从反应器（1）中卸载基板（10），然后在反应器（1）中不存在基板（10）的同时对反应器（1）的内部进行强制空气冷却。 附着在反应器（1）中的沉积膜的应力比没有鼓风机的空气冷却显示出的沉积膜的应力增加，从而积极地产生热应力，结果是沉积膜将在没有鼓风机的空气冷却下显现出强制开裂。 通过在大气压力的状态下通过在反应器中吹扫强制地将从裂化物散落的微粒有效排出反应堆。

公开(公告)号：US08227030B2

公开(公告)日：2012-07-24

申请号：US12382276

申请日：2009-03-12

Applicant: Takaaki Noda ,  Kenichi Suzaki

Inventor： Takaaki Noda ,  Kenichi Suzaki

IPC: C23C16/00 ,  C23C16/22

CPC classification number: C23C16/4408 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

Abstract: A process for producing a semiconductor device, in which in the formation of a boron doped silicon film from, for example, monosilane and boron trichloride by vacuum CVD technique, there can be produced a film excelling in inter-batch homogeneity with respect to the growth rate and concentration of a dopant element, such as boron. The process includes the step of performing the first purge through conducting at least once of while a substrate after treatment is housed in a reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto and the steps of performing the second purge through conducting at least once of after carrying of the substrate after treatment out of the reaction furnace, prior to carrying of a substrate to be next treated into the reaction furnace and while at least no product substrate is housed in the reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto.