公开(公告)号：US07279823B2

公开(公告)日：2007-10-09

申请号：US10492355

申请日：2003-05-15

申请人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Koji Sumi ,  Masami Murai

发明人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Koji Sumi ,  Masami Murai

IPC分类号： H01L41/08

CPC分类号： H01L41/0973 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/047 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/319

摘要： A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilized zirconia, CeO2, or ZrO2, that is grown epitaxially on a (100) orientation Si substrate 20, a buffer layer 41 formed on the diaphragm and constituted by (001) orientation REBa2Cu3Ox, a bottom electrode 42 formed on the buffer layer and constituted by (100) orientation strontium ruthenate, a piezoelectric layer 43 formed on the bottom electrode and constituted by (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer.

摘要翻译： 提供了当使用（100）取向的钌酸锶作为底部电极时具有最佳层结构的压电致动器。 该压电致动器包括由（100）取向氧化钇稳定的氧化锆，CeO 2 2或ZrO 2 2构成的隔膜30，其在（100）上外延生长， 取向Si衬底20，形成在隔膜上并由（001）取向REBa 2 Cu 3 O x x构成的缓冲层41，底部 形成在缓冲层上并由（100）取向钌酸锶构成的电极42，形成在底部电极上并由（100）取向PZT构成的压电层43和形成在压电层上的顶部电极44。

公开(公告)号：US07223305B2

公开(公告)日：2007-05-29

申请号：US10761147

申请日：2004-01-20

申请人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

发明人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

IPC分类号： C30B29/30

CPC分类号： H03H9/02574 ,  C30B19/00 ,  C30B29/30 ,  H03H3/08

摘要： A method of manufacturing a potassium niobate (KNbO3) single crystal thin film, includes the steps of maintaining the substrate under a predetermined oxygen partial pressure; maintaining the substrate within a temperature region which is equal to or higher than an eutectic temperature of KNbO3 and 3K2O.Nb2O5 and is equal to or lower than complete melting temperature of KNbO3 and 3K2O.Nb2O5 so that a solid phase of KNbO3 and a liquid phase can coexist on the substrate; depositing a vapor phase material on the substrate in a state in which a solid phase and a liquid phase coexist; and precipitating KNbO3 on the substrate from the liquid phase as a solid phase to grow a KNbO3 single crystal thin film. The composition of a starting material to be vaporized to generate the vapor phase material is from K2O.Nb2O5=50:50 to K2O.Nb2O5=65:35.

摘要翻译： 制备铌酸钾（KNbO 3）单晶薄膜的方法包括以下步骤：将衬底保持在预定的氧分压下; 将衬底保持在等于或高于KNbO 3和3K 2 N 2 O 2的共晶温度的温度区域内， 并且等于或低于KNbO 3和3K 2 O的完全熔融温度.Nb 2 O 2， 使得KNbO 3 3的固相和液相可以共存在基底上; 在固相和液相共存的状态下在基板上沉积气相材料; 并从液相中沉淀KNbO 3 N 3作为固相，以生长KNbO 3/3单晶薄膜。 待蒸发以产生气相材料的起始材料的组成为K 2 N 2 O 2 O 5 = 50:50 至K 2 N 2 N 2 O 5 = 65:35。

公开(公告)号：US07033521B2

公开(公告)日：2006-04-25

申请号：US10396115

申请日：2003-03-25

申请人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

发明人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

IPC分类号： H01L41/187 ,  H01I41/04 ,  B41J2/045 ,  B32B15/00

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/1871 ,  H01L41/318 ,  H01L41/319 ,  Y10T428/12493 ,  Y10T428/12611

摘要： A piezoelectric actuator includes: a buffer layer that is composed of an oxide or a nitride epitaxially formed on a Si substrate; a bottom electrode formed on the buffer layer, being composed of a transition metal oxide, and having a pseudo-cubic (100) or (111) orientation with a perovskite structure; a piezoelectric layer formed on the bottom electrode being composed of (Ba1−xMx)(Ti1−yZy)O3 (where (M=Sr or Ca and 0≦x≦0.3) (Z=Zr or Hf and 0≦y≦0.2)) with a pseudo-cubic (001) or (111) orientation; and a top electrode that is formed on the piezoelectric layer. In this way, a piezoelectric actuator that uses barium titanate as the piezoelectric body and does not include Pb is provided.

摘要翻译： 压电致动器包括：由外延形成在Si衬底上的氧化物或氮化物构成的缓冲层; 形成在缓冲层上的底电极，由过渡金属氧化物构成，具有钙钛矿结构的假立方（100）或（111）取向; 形成在底部电极上的压电层由（Ba 1-x M x X）（Ti 1-y Z z） （其中（M = Sr或Ca，0 <= x <= 0.3）（Z = Zr或Hf，0 <= y <= 0.2））） （001）或（111）取向; 以及形成在压电层上的顶部电极。 以这种方式，提供了使用钛酸钡作为压电体并且不包括Pb的压电致动器。

公开(公告)号：US06995634B2

公开(公告)日：2006-02-07

申请号：US10753237

申请日：2004-01-07

申请人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

发明人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

IPC分类号： H03H9/64 ,  H03B5/36

CPC分类号： H03H9/0542 ,  H03H9/02574 ,  H03H9/02984

摘要： A surface-acoustic-wave component that comprises a first piezoelectric layer composed of zinc oxide (ZnO), a second piezoelectric layer composed of lithium niobate (LiNbO3), and a protective layer, which are sequentially formed on a silicon substrate, on which electrodes (e.g., interdigital transducers) are further formed. Alternatively, it comprises a conductive layer composed of zinc oxide (ZnO), a piezoelectric layer composed of lithium niobate (LiNbO3), and a protective layer, which are sequentially formed on a silicon substrate, on which electrodes are further formed. The piezoelectric layer can actualize preferable orientation so as to improve the electromechanical coupling coefficient (K2). Thus, it is possible to produce surface-acoustic-wave components that contribute to manufacturing of highly-integrated electronic circuits such as frequency filters and oscillators as well as electronic devices such as portable telephones.

摘要翻译： 一种表面声波分量，包括由氧化锌（ZnO）构成的第一压电层，由铌酸锂（LiNbO 3 N）组成的第二压电层和保护层，所述表面声波分量依次形成 在硅衬底上，在其上进一步形成电极（例如，叉指式换能器）。 或者，其包括由氧化锌（ZnO）构成的导电层，由铌酸锂（LiNbO 3 N）构成的压电层和保护层，其依次形成在硅基板上， 进一步形成电极。 压电层可以实现优选的取向，从而提高机电耦合系数（K 2 O 2）。 因此，可以产生有助于制造诸如频率滤波器和振荡器的高度集成的电子电路以及诸如便携式电话的电子设备的表面声波分量。

公开(公告)号：US20050179342A1

公开(公告)日：2005-08-18

申请号：US10492355

申请日：2003-05-15

申请人： Takamitsu Higuchi ,  Setsuya Iwashita

发明人： Takamitsu Higuchi ,  Setsuya Iwashita

IPC分类号： B41J2/14 ,  H01L41/047 ,  H01L41/22 ,  H01L41/319 ,  H01L41/18

CPC分类号： H01L41/0973 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/047 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/319

摘要： A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilized zirconia, CeO2, or ZrO2, that is grown epitaxially on a (100) orientation Si substrate 20, a buffer layer 41 formed on the diaphragm and constituted by (001) orientation REBa2Cu3Ox, a bottom electrode 42 formed on the buffer layer and constituted by (100) orientation strontium ruthenate, a piezoelectric layer 43 formed on the bottom electrode and constituted by (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer.

摘要翻译： 提供了当使用（100）取向的钌酸锶作为底部电极时具有最佳层结构的压电致动器。 该压电致动器包括由（100）取向氧化钇稳定的氧化锆，CeO 2 2或ZrO 2 2构成的隔膜30，其在（100）上外延生长， 取向Si衬底20，形成在隔膜上并由（001）取向REBa 2 Cu 3 O x x构成的缓冲层41，底部 形成在缓冲层上并由（100）取向钌酸锶构成的电极42，形成在底部电极上并由（100）取向PZT构成的压电层43和形成在压电层上的顶部电极44。

公开(公告)号：US20050128681A1

公开(公告)日：2005-06-16

申请号：US11004591

申请日：2004-12-03

申请人： Setsuya Iwashita ,  Motohisa Noguchi ,  Hiromu Miyazawa ,  Takamitsu Higuchi

发明人： Setsuya Iwashita ,  Motohisa Noguchi ,  Hiromu Miyazawa ,  Takamitsu Higuchi

IPC分类号： H01L27/04 ,  H01G4/06 ,  H01L21/02 ,  H01L21/822

CPC分类号： H01L28/55

摘要： A capacitor is provided having a structure in which an insulation film is interposed between a first electrode and a second electrode. The insulation film includes SrTiO3 as a main component, and at least one of Si and Ge added thereto.

摘要翻译： 提供一种电容器，其具有绝缘膜插入在第一电极和第二电极之间的结构。 绝缘膜包括SrTiO 3 3主要成分，并添加至少一种Si和Ge。

公开(公告)号：US20050096230A1

公开(公告)日：2005-05-05

申请号：US11008761

申请日：2004-12-08

申请人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

发明人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

IPC分类号： H01L41/08 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H03H9/02 ,  H03H9/17 ,  H03H9/25 ,  H01G2/00

CPC分类号： H01L21/02197 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/31691 ,  H01L28/56 ,  H03H9/02574 ,  H03H9/174 ,  Y10S257/918

摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.

摘要翻译： 通过在无机非晶层或有机固体层上沿期望的方向外延生长钙钛矿型氧化物薄膜，高度改善电子器件的性能; 此外，通过将电子器件结合到集成电路中提供高性能电子器件，其中在无机非晶层或有机固体层上形成氧化物薄层，并且钙钛矿型氧化物薄膜外延生长在 氧化物薄层可以是氧化锶，氧化镁，氧化铈，氧化锆，钇稳定的氧化锆和钛酸锶中的至少一种; 作为钙钛矿型氧化物薄膜，例如使用作为压电体或铁电体材料的钙钛矿型氧化物薄膜。

公开(公告)号：US06849861B2

公开(公告)日：2005-02-01

申请号：US10108180

申请日：2002-03-27

申请人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

发明人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

IPC分类号： H01L41/08 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H03H9/02 ,  H03H9/17 ,  H03H9/25 ,  H01L29/06

CPC分类号： H01L21/02197 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/31691 ,  H01L28/56 ,  H03H9/02574 ,  H03H9/174 ,  Y10S257/918

摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.

公开(公告)号：US06779878B2

公开(公告)日：2004-08-24

申请号：US10314418

申请日：2002-12-09

申请人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Koji Sumi ,  Masami Murai

发明人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Koji Sumi ,  Masami Murai

IPC分类号： B41J2045

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2202/03 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/318

摘要： The present invention provides an optimum layer structure for a piezoelectric actuator in which (100) orientation strontium ruthenate is used as a bottom electrode. The piezoelectric actuator comprises a Si substrate 20, a diaphragm 30 comprising (110) or (100) orientation strontium oxide which is formed thereon by way of epitaxial growth, a bottom electrode 42 comprising (100) orientation strontium ruthenate having a perovskite structure, a piezoelectric layer 43 comprising (100) orientation PZT, and a top electrode 44.

摘要翻译： 本发明提供一种用于压电致动器的最佳层结构，其中（100）取向的钌酸锶用作底部电极。 压电致动器包括Si衬底20，包括通过外延生长在其上形成的（110）或（100）取向氧化锶的隔膜30，包括具有钙钛矿结构的（100）取向钌酸锶的底部电极42， 包括（100）取向PZT的压电层43和顶部电极44。

公开(公告)号：US06737690B2

公开(公告)日：2004-05-18

申请号：US10105042

申请日：2002-03-22

申请人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa ,  Kazumasa Hasegawa ,  Eiji Natori

发明人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa ,  Kazumasa Hasegawa ,  Eiji Natori

IPC分类号： H01C31119

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/31604 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/60 ,  Y10S257/906

摘要： The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has an excellent degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved. A ferroelectric memory having both integration and memory characteristics in which the angularity of the ferroelectric layer's hysteresis curve is improved is realized as follows. Namely, a structure is employed in which the memory cell array and the peripheral circuit are in a plane separated from one another, and the ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer and the first signal electrodes.

摘要翻译： 本发明涉及具有优异的集成度的矩阵型存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度。 如下实现具有集成和存储特性的强电介质存储器，其中铁电层的磁滞曲线的角度得到改善。 也就是说，采用其中存储单元阵列和外围电路处于彼此分离的平面中的结构，并且使铁电层经由缓冲器和第一信号电极经历外延生长到Si单晶。