公开(公告)号：US11532701B2

公开(公告)日：2022-12-20

申请号：US17199152

申请日：2021-03-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Fu Lin ,  Tsung-Hao Yeh ,  Chien-Hung Liu ,  Shiang-Hung Huang ,  Chih-Wei Hung ,  Tung-Yang Lin ,  Ruey-Hsin Liu ,  Chih-Chang Cheng

IPC分类号： H01L29/06 ,  H01L21/762 ,  H01L29/10 ,  H01L27/12 ,  H01L29/41 ,  H01L29/40

摘要： A semiconductor isolation structure includes a handle layer, a buried insulation layer, a semiconductor layer, a deep trench isolation structure, and a heavy doping region. The buried insulation layer is disposed on the handle layer. The semiconductor layer is disposed on the buried insulation layer and has a doping type. The semiconductor layer has a functional area in which doped regions of a semiconductor device are to be formed. The deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional area. The heavy doping region is formed in the semiconductor layer, is disposed between the functional area and the deep trench isolation structure, and is surrounded by the deep trench isolation structure. The heavy doping region has the doping type. A doping concentration of the heavy doping region is higher than that of the semiconductor layer.

公开(公告)号：US11862670B2

公开(公告)日：2024-01-02

申请号：US17319457

申请日：2021-05-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Fu Lin ,  Tsung-Hao Yeh ,  Chih-Wei Hung

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/0607 ,  H01L29/66681 ,  H01L29/7816

摘要： A semiconductor device includes a drift region, a dielectric film, and an anti-type doping layer. The drift region has a first type conductivity. The anti-type doping layer is located between the drift region and the dielectric film, and has a second type conductivity opposite to the first type conductivity so as to change a current path of a current in the drift region, to thereby prevent the current from being influenced by the dielectric film. A method for manufacturing a semiconductor device and a method for reducing an influence of a dielectric film are also disclosed.

公开(公告)号：US12051748B2

公开(公告)日：2024-07-30

申请号：US17400671

申请日：2021-08-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Fu Lin ,  Chien-Hung Liu ,  Tsung-Hao Yeh

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/7816 ,  H01L29/0653 ,  H01L29/66681

摘要： A semiconductor device includes a semiconductor layer, a drift region, a source area, a well region, a drain area, and a dielectric film. The drift region and the source area are formed in the semiconductor layer. The well region is formed in the semiconductor layer and between the drift region and the source area. The drain area is formed in the drift region. The dielectric film is formed in the drift region and is located between the source area and the drain area. The dielectric film includes a proximate end portion and a distal end portion which are proximate to and distal from the source area, respectively, and which are asymmetrical to each other.

公开(公告)号：US20220415879A1

公开(公告)日：2022-12-29

申请号：US17667858

申请日：2022-02-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin Fu Lin ,  Shiang-Hung Huang ,  Tsung-Hao Yeh

IPC分类号： H01L27/02

摘要： Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a well region disposed within a semiconductor substrate and comprises a first doping type. A gate electrode overlies the well region. A first contact region is disposed within the well region and comprises a second doping type opposite the first doping type. A second contact region is disposed within the semiconductor substrate and laterally offset from the well region. The second contact region comprises the first doping type and the gate electrode is disposed between the first contact region and the second contact region. A gate dielectric layer is disposed between the semiconductor substrate and the well region, where a thickness of the gate dielectric layer is greater than about 140 Angstroms.

公开(公告)号：US11961890B2

公开(公告)日：2024-04-16

申请号：US17400594

申请日：2021-08-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Fu Lin ,  Chia-Ta Hsieh ,  Tsung-Hao Yeh

IPC分类号： H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/42368 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/66681 ,  H01L29/7816

摘要： A semiconductor device includes a semiconductor layer and a gate structure on the semiconductor layer. The gate structure includes a multi-stepped gate dielectric on the semiconductor layer and a gate electrode on the multi-stepped gate dielectric. The multi-stepped gate dielectric includes a first gate dielectric segment having a first thickness and a second gate dielectric segment having a second thickness that is less than the first thickness.

公开(公告)号：US20230387209A1

公开(公告)日：2023-11-30

申请号：US18363077

申请日：2023-08-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin Fu Lin ,  Tsung-Hao Yeh

IPC分类号： H01L29/10 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/1041 ,  H01L29/1045 ,  H01L21/823493 ,  H01L29/0692 ,  H01L29/7816 ,  H01L29/66568 ,  H01L21/26513

摘要： The present disclosure relates to a semiconductor structure that includes a well region and a semiconductor substrate. The well region is disposed within the semiconductor substrate. The well region includes a plurality of first regions separated by a plurality of second regions, where the plurality of first regions is of a first doping and the plurality of second regions are of a second doping different than the first doping. A gate electrode overlies the well region where the gate electrode is disposed laterally over a portion of the plurality of first regions and a portion of the plurality of second regions.

公开(公告)号：US20230011246A1

公开(公告)日：2023-01-12

申请号：US17574728

申请日：2022-01-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin Fu Lin ,  Tsung-Hao Yeh

IPC分类号： H01L29/10 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

摘要： The present disclosure relates to a semiconductor structure that includes a well region and a semiconductor substrate. The well region is disposed within the semiconductor substrate. The well region includes a plurality of first regions separated by a plurality of second regions, where the plurality of first regions is of a first doping and the plurality of second regions are of a second doping different than the first doping. A gate electrode overlies the well region where the gate electrode is disposed laterally over a portion of the plurality of first regions and a portion of the plurality of second regions.

公开(公告)号：US20230010333A1

公开(公告)日：2023-01-12

申请号：US17728048

申请日：2022-04-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Hak-Lay Chuang ,  Hsin Fu Lin ,  Shiang-Hung Huang ,  Tsung-Hao Yeh

IPC分类号： H01L23/367 ,  H01L27/12 ,  H01L23/528 ,  H01L21/84 ,  H01L21/762

摘要： Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a substrate. A semiconductor device is disposed on the substrate. An interlayer dielectric (ILD) structure is disposed over the substrate and the semiconductor device. A first intermetal dielectric (IMD) structure is disposed over the substrate and the ILD structure. An opening is disposed in the first IMD structure, wherein the opening overlies at least a portion of the semiconductor device.

公开(公告)号：US20220367611A1

公开(公告)日：2022-11-17

申请号：US17319457

申请日：2021-05-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Fu LIN ,  Tsung-Hao Yeh ,  Chih-Wei HUNG

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/78

摘要： A semiconductor device includes a drift region, a dielectric film, and an anti-type doping layer. The drift region has a first type conductivity. The anti-type doping layer is located between the drift region and the dielectric film, and has a second type conductivity opposite to the first type conductivity so as to change a current path of a current in the drift region, to thereby prevent the current from being influenced by the dielectric film. A method for manufacturing a semiconductor device and a method for reducing an influence of a dielectric film are also disclosed.

公开(公告)号：US20240250116A1

公开(公告)日：2024-07-25

申请号：US18442381

申请日：2024-02-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Hak-Lay Chuang ,  Hsin Fu Lin ,  Tsung-Hao Yeh

IPC分类号： H01L29/06 ,  H01L21/762 ,  H01L21/768 ,  H01L23/48 ,  H01L29/78

CPC分类号： H01L29/0607 ,  H01L21/76283 ,  H01L21/76898 ,  H01L23/481 ,  H01L29/7824

摘要： An integrated circuit (IC) device comprises a high voltage semiconductor device (HVSD) on a frontside of a semiconductor body and further comprises an electrode on a backside of the semiconductor body opposite the frontside. The HVSD may for example, be a transistor or some other suitable type of semiconductor device. The electrode has one or more gaps directly beneath the HVSD. The one or more gaps enhance the effectiveness of the electrode for improving the breakdown voltage of the HVSD.