-
公开(公告)号：US10510553B1
公开(公告)日：2019-12-17
申请号：US15993178
申请日：2018-05-30
发明人： Jack Kuo-Ping Kuo , Sheng-Liang Pan , Chia-Yang Hung , Jyu-Horng Shieh , Shu-Huei Suen , Syun-Ming Jang
IPC分类号： H01L21/311 , H01L21/67 , H01J37/32
摘要： An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.
-
公开(公告)号：US20190371619A1
公开(公告)日：2019-12-05
申请号：US15993178
申请日：2018-05-30
发明人： Jack Kuo-Ping Kuo , Sheng-Liang Pan , Chia-Yang Hung , Jyu-Horng Shieh , Shu-Huei Suen , Syun-Ming Jang
IPC分类号： H01L21/311 , H01L21/67 , H01J37/32
摘要： An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.
-
公开(公告)号：US20240019787A1
公开(公告)日：2024-01-18
申请号：US18223993
申请日：2023-07-19
发明人： Ru-Gun LIU , Huicheng Chang , Chia-Cheng Chen , Jyu-Horng Shieh , Liang-Yin Chen , Shu-Huei Suen , Wei-Liang Lin , Ya Hui Chang , Yi-Nien Su , Yung-Sung Yen , Chia-Fong Chang , Ya-Wen Yeh , Yu-Tien Shen
CPC分类号： G03F7/70558 , H01L21/0274 , G03F7/70033 , G03F7/70625 , G03F1/22 , G03F1/36 , G03F1/70 , G03F7/0035 , G03F7/40
摘要： In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
-
公开(公告)号：US20200098588A1
公开(公告)日：2020-03-26
申请号：US16698398
申请日：2019-11-27
发明人： Jack Kuo-Ping Kuo , Sheng-Liang Pan , Chia-Yang Hung , Jyu-Horng Shieh , Shu-Huei Suen , Syun-Ming Jang
IPC分类号： H01L21/311 , H01J37/32 , H01L21/67
摘要： An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.
-
-
-
搜索结果
4 条记录 (耗时 0.019 秒)
