公开(公告)号：US20140246709A1

公开(公告)日：2014-09-04

申请号：US13782072

申请日：2013-03-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Sheng-Ching Chen ,  Kuang-Hsin Chen ,  Bor-Zen Tien ,  Tzong-Sheng Chang

IPC: H01L29/78 ,  H01L21/76

CPC classification number: H01L29/78 ,  H01L21/76 ,  H01L29/66545

Abstract: A semiconductor device includes a gate structure over a substrate. The device further includes an isolation feature in the substrate and adjacent to an edge of the gate structure. The device also includes a spacer overlying a sidewall of the gate structure. The spacer has a bottom lower than a top surface of the substrate.

Abstract translation: 半导体器件包括在衬底上的栅极结构。 该器件还包括衬底中的隔离特征并且与栅极结构的边缘相邻。 该装置还包括覆盖栅极结构的侧壁的间隔物。 间隔物的底部低于衬底的顶表面。

公开(公告)号：US08860151B2

公开(公告)日：2014-10-14

申请号：US13782072

申请日：2013-03-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sheng-Ching Chen ,  Kuang-Hsin Chen ,  Bor-Zen Tien ,  Tzong-Sheng Chang

IPC: H01L21/02 ,  H01L29/78 ,  H01L21/76

CPC classification number: H01L29/78 ,  H01L21/76 ,  H01L29/66545

Abstract: A semiconductor device includes a gate structure over a substrate. The device further includes an isolation feature in the substrate and adjacent to an edge of the gate structure. The device also includes a spacer overlying a sidewall of the gate structure. The spacer has a bottom lower than a top surface of the substrate.

Abstract translation: 半导体器件包括在衬底上的栅极结构。 该器件还包括衬底中的隔离特征并且与栅极结构的边缘相邻。 该装置还包括覆盖栅极结构的侧壁的间隔物。 间隔物的底部低于衬底的顶表面。