SEMICONDUCTOR STRUCTURE AND CIRCUIT STRUCTURE

    公开(公告)号:US20230178466A1

    公开(公告)日:2023-06-08

    申请号:US18162620

    申请日:2023-01-31

    IPC分类号: H01L23/498 H01L21/48

    摘要: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.

    Semiconductor structure and manufacturing method thereof

    公开(公告)号:US11594479B2

    公开(公告)日:2023-02-28

    申请号:US17351253

    申请日:2021-06-18

    摘要: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.

    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220406699A1

    公开(公告)日:2022-12-22

    申请号:US17351253

    申请日:2021-06-18

    IPC分类号: H01L23/498 H01L21/48

    摘要: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.

    PACKAGE STRUCTURE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20220415776A1

    公开(公告)日:2022-12-29

    申请号:US17357937

    申请日:2021-06-24

    摘要: A package structure includes a redistribution structure and a core substrate. The redistribution structure includes a plurality of connection pads. The core substrate is disposed on the redistribution structure and electrically connected to the plurality of connection pads. The core substrate includes a first interconnection layer and a plurality of conductive terminals. The first interconnection layer has a first region, a second region surrounding the first region, and a third region surrounding the second region, and includes a plurality of bonding pads located in the first region, the second region and the third region. The conductive terminals are electrically connecting the plurality of bonding pads to the plurality of connection pads of the redistribution structure, wherein the plurality of conductive terminals located over the first region, the second region and the third region of the first interconnection layer have different heights.