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公开(公告)号:US20230178466A1
公开(公告)日:2023-06-08
申请号:US18162620
申请日:2023-01-31
发明人: Kuan-Lin Ho , Chin-Liang Chen , Pei-Rong Ni , Chia-Min Lin , Yu-Min Liang , Jiun-Yi Wu
IPC分类号: H01L23/498 , H01L21/48
CPC分类号: H01L23/49833 , H01L21/4857 , H01L23/49816 , H01L23/49822
摘要: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.
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公开(公告)号:US11594479B2
公开(公告)日:2023-02-28
申请号:US17351253
申请日:2021-06-18
发明人: Kuan-Lin Ho , Chin-Liang Chen , Pei-Rong Ni , Chia-Min Lin , Yu-Min Liang , Jiun-Yi Wu
IPC分类号: H01L23/00 , H01L23/498 , H01L21/48
摘要: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.
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公开(公告)号:US20220406699A1
公开(公告)日:2022-12-22
申请号:US17351253
申请日:2021-06-18
发明人: Kuan-Lin Ho , Chin-Liang Chen , Pei-Rong Ni , Chia-Min Lin , Yu-Min Liang , Jiun-Yi Wu
IPC分类号: H01L23/498 , H01L21/48
摘要: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.
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公开(公告)号:US20240096781A1
公开(公告)日:2024-03-21
申请号:US18186209
申请日:2023-03-20
发明人: Chun-Ti Lu , Hao-Yi Tsai , Chia-Hung Liu , Yu-Hsiang Hu , Hsiu-Jen Lin , Tzuan-Horng Liu , Chih-Hao Chang , Bo-Jiun Lin , Shih-Wei Chen , Hung-Chun Cho , Pei-Rong Ni , Hsin-Wei Huang , Zheng-Gang Tsai , Tai-You Liu , Po-Chang Shih , Yu-Ting Huang
IPC分类号: H01L23/498 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/538 , H10B80/00
CPC分类号: H01L23/49894 , H01L21/4857 , H01L21/568 , H01L23/3128 , H01L23/5383 , H01L24/16 , H01L24/32 , H01L24/73 , H10B80/00 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204
摘要: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.
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公开(公告)号:US11810847B2
公开(公告)日:2023-11-07
申请号:US17357937
申请日:2021-06-24
发明人: Chin-Liang Chen , Kuan-Lin Ho , Pei-Rong Ni , Chia-Min Lin , Yu-Min Liang , Jiun-Yi Wu
IPC分类号: H01L23/498 , H01L21/48 , H01L23/00
CPC分类号: H01L23/49833 , H01L21/4853 , H01L23/49816 , H01L23/49838 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2924/37001
摘要: A package structure includes a redistribution structure and a core substrate. The redistribution structure includes a plurality of connection pads. The core substrate is disposed on the redistribution structure and electrically connected to the plurality of connection pads. The core substrate includes a first interconnection layer and a plurality of conductive terminals. The first interconnection layer has a first region, a second region surrounding the first region, and a third region surrounding the second region, and includes a plurality of bonding pads located in the first region, the second region and the third region. The conductive terminals are electrically connecting the plurality of bonding pads to the plurality of connection pads of the redistribution structure, wherein the plurality of conductive terminals located over the first region, the second region and the third region of the first interconnection layer have different heights.
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公开(公告)号:US20220415776A1
公开(公告)日:2022-12-29
申请号:US17357937
申请日:2021-06-24
发明人: Chin-Liang Chen , Kuan-Lin Ho , Pei-Rong Ni , Chia-Min Lin , Yu-Min Liang , Jiun-Yi Wu
IPC分类号: H01L23/498 , H01L21/48 , H01L23/00
摘要: A package structure includes a redistribution structure and a core substrate. The redistribution structure includes a plurality of connection pads. The core substrate is disposed on the redistribution structure and electrically connected to the plurality of connection pads. The core substrate includes a first interconnection layer and a plurality of conductive terminals. The first interconnection layer has a first region, a second region surrounding the first region, and a third region surrounding the second region, and includes a plurality of bonding pads located in the first region, the second region and the third region. The conductive terminals are electrically connecting the plurality of bonding pads to the plurality of connection pads of the redistribution structure, wherein the plurality of conductive terminals located over the first region, the second region and the third region of the first interconnection layer have different heights.
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