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公开(公告)号：US20190252379A1
公开(公告)日：2019-08-15
申请号：US16390398
申请日：2019-04-22
发明人： Shih-Wen Huang , Chia-Hui Lin , Shin-Yeu Tsai , Kai Hung Cheng
IPC分类号： H01L27/088 , H01L21/225 , H01L21/324 , H01L21/8234 , H01L29/06 , H01L21/762 , H01L21/306
摘要： A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-type or p-type. The remaining portions of the trenches are filled with a dielectric material. A planarization is performed on the dielectric material. Remaining portions of the dielectric dose film and the dielectric material form Shallow Trench Isolation (STI) regions. A thermal treatment is performed to diffuse the dopant in the dielectric dose film into the semiconductor strip.
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公开(公告)号：US10269796B2
公开(公告)日：2019-04-23
申请号：US15867255
申请日：2018-01-10
发明人： Shih-Wen Huang , Chia-Hui Lin , Shin-Yeu Tsai , Kai Hung Cheng
IPC分类号： H01L27/088 , H01L29/06 , H01L21/762 , H01L21/8234 , H01L21/306 , H01L21/324 , H01L21/225
摘要： A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-type or p-type. The remaining portions of the trenches are filled with a dielectric material. A planarization is performed on the dielectric material. Remaining portions of the dielectric dose film and the dielectric material form Shallow Trench Isolation (STI) regions. A thermal treatment is performed to diffuse the dopant in the dielectric dose film into the semiconductor strip.
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公开(公告)号：US20180130800A1
公开(公告)日：2018-05-10
申请号：US15867255
申请日：2018-01-10
发明人： Shih-Wen Huang , Chia-Hui Lin , Shin-Yeu Tsai , Kai Hung Cheng
IPC分类号： H01L27/088 , H01L21/225 , H01L21/324 , H01L21/8234 , H01L21/762 , H01L29/06 , H01L21/306
CPC分类号： H01L27/0886 , H01L21/2254 , H01L21/30604 , H01L21/324 , H01L21/76237 , H01L21/823431 , H01L21/823481 , H01L29/0649
摘要： A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-type or p-type. The remaining portions of the trenches are filled with a dielectric material. A planarization is performed on the dielectric material. Remaining portions of the dielectric dose film and the dielectric material form Shallow Trench Isolation (STI) regions. A thermal treatment is performed to diffuse the dopant in the dielectric dose film into the semiconductor strip.
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公开(公告)号：US10734227B2
公开(公告)日：2020-08-04
申请号：US16430114
申请日：2019-06-03
发明人： Dong-Sheng Li , Chia-Hui Lin , Kai Hung Cheng , Yao-Hsu Sun , Wen-Cheng Wu , Bo-Cyuan Lu , Sung-En Lin , Tai-Chun Huang
IPC分类号： H01L21/027 , H01L21/033 , H01L21/02 , H01L21/28 , H01L21/3213 , H01L21/311 , H01L21/8238 , G03F7/09 , G03F7/16 , G03F7/20 , G03F7/26
摘要： A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.
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公开(公告)号：US10522541B2
公开(公告)日：2019-12-31
申请号：US16390398
申请日：2019-04-22
发明人： Shih-Wen Huang , Chia-Hui Lin , Shin-Yeu Tsai , Kai Hung Cheng
IPC分类号： H01L21/762 , H01L27/088 , H01L29/06 , H01L21/8234 , H01L21/306 , H01L21/324 , H01L21/225
摘要： A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-type or p-type. The remaining portions of the trenches are filled with a dielectric material. A planarization is performed on the dielectric material. Remaining portions of the dielectric dose film and the dielectric material form Shallow Trench Isolation (STI) regions. A thermal treatment is performed to diffuse the dopant in the dielectric dose film into the semiconductor strip.
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公开(公告)号：US09881918B1
公开(公告)日：2018-01-30
申请号：US15281568
申请日：2016-09-30
发明人： Shih-Wen Huang , Chia-Hui Lin , Shin-Yeu Tsai , Kai Hung Cheng
IPC分类号： H01L21/324 , H01L27/088 , H01L29/06 , H01L21/762 , H01L21/8234 , H01L21/306 , H01L21/225
CPC分类号： H01L27/0886 , H01L21/2254 , H01L21/30604 , H01L21/324 , H01L21/76237 , H01L21/823431 , H01L21/823481 , H01L29/0649
摘要： A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-type or p-type. The remaining portions of the trenches are filled with a dielectric material. A planarization is performed on the dielectric material. Remaining portions of the dielectric dose film and the dielectric material form Shallow Trench Isolation (STI) regions. A thermal treatment is performed to diffuse the dopant in the dielectric dose film into the semiconductor strip.
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公开(公告)号：US10720430B2
公开(公告)日：2020-07-21
申请号：US16727303
申请日：2019-12-26
发明人： Shih-Wen Huang , Chia-Hui Lin , Shin-Yeu Tsai , Kai Hung Cheng
IPC分类号： H01L21/225 , H01L27/088 , H01L21/324 , H01L29/06 , H01L21/306 , H01L21/8234 , H01L21/762
摘要： A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-type or p-type. The remaining portions of the trenches are filled with a dielectric material. A planarization is performed on the dielectric material. Remaining portions of the dielectric dose film and the dielectric material form Shallow Trench Isolation (STI) regions. A thermal treatment is performed to diffuse the dopant in the dielectric dose film into the semiconductor strip.
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公开(公告)号：US20200144258A1
公开(公告)日：2020-05-07
申请号：US16727303
申请日：2019-12-26
发明人： Shih-Wen Huang , Chia-Hui Lin , Shin-Yeu Tsai , Kai Hung Cheng
IPC分类号： H01L27/088 , H01L21/225 , H01L21/324 , H01L21/8234 , H01L21/306 , H01L21/762 , H01L29/06
摘要： A method includes etching a semiconductor substrate to form trenches, with a portion of the semiconductor substrate between the trenches being a semiconductor strip, and depositing a dielectric dose film on sidewalls of the semiconductor strip. The dielectric dose film is doped with a dopant of n-type or p-type. The remaining portions of the trenches are filled with a dielectric material. A planarization is performed on the dielectric material. Remaining portions of the dielectric dose film and the dielectric material form Shallow Trench Isolation (STI) regions. A thermal treatment is performed to diffuse the dopant in the dielectric dose film into the semiconductor strip.
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公开(公告)号：US20200075320A1
公开(公告)日：2020-03-05
申请号：US16430114
申请日：2019-06-03
发明人： Dong-Sheng Li , Chia-Hui Lin , Kai Hung Cheng , Yao-Hsu Sun , Wen-Cheng Wu , Bo-Cyuan Lu , Sung-En Lin , Tai-Chun Huang
IPC分类号： H01L21/027 , H01L21/033 , H01L21/02 , H01L21/28 , H01L21/3213 , H01L21/311 , H01L21/8238
摘要： A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.
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