公开(公告)号：US20230050785A1

公开(公告)日：2023-02-16

申请号：US17401265

申请日：2021-08-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Yu Yeh ,  Ching-He Chen ,  Kuo-Chiang Ting ,  Weiming Chris Chen ,  Chia-Hao Hsu ,  Kuan-Yu Huang ,  Shu-Chia Hsu

IPC: H01L23/498 ,  H01L25/065 ,  H01L21/48

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. A plurality of conductive balls is placed over a circuit substrate, where each of the conductive balls is placed over a contact area of one of a plurality of contact pads that is accessibly revealed by a patterned mask layer. The conductive balls are reflowed to form a plurality of external terminals with varying heights connected to the contact pads of the circuit substrate, where a first external terminal of the external terminals formed in a first region of the circuit substrate and a second external terminal of the external terminals formed in a second region of the circuit substrate are non-coplanar.