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公开(公告)号：US20230411373A1
公开(公告)日：2023-12-21
申请号：US18365234
申请日：2023-08-04
发明人： Yu-Kuang Liao , Cheng-Chun Tsai , Chen-Hua Yu , Fang-Cheng Chen , Wen-Chih Chiou , Ping-Jung Wu
CPC分类号： H01L25/167 , G02B6/1226 , G02B6/1225 , G02B6/4201 , H01L24/17 , H01L23/29 , H01L23/5226 , H04B10/40
摘要： A semiconductor package includes a first electric integrated circuit component, a second integrated circuit component, and a first plasmonic bridge. The second electric integrated circuit component is aside the first electric integrated circuit component. The first plasmonic bridge is vertically overlapped with both the first electric integrated circuit component and the second electric integrated circuit component. The first plasmonic bridge includes a first plasmonic waveguide optically connecting the first electric integrated circuit component and the second electric integrated circuit component.
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公开(公告)号：US20160197029A1
公开(公告)日：2016-07-07
申请号：US14591809
申请日：2015-01-07
发明人： Cheng-Chun Tsai , Hung-Pin Chang , Ku-Feng Yang , Yi-Hsiu Chen , Wen-Chih Chiou
IPC分类号： H01L23/48 , H01L21/768 , H01L23/00
CPC分类号： H01L24/94 , H01L21/30608 , H01L21/486 , H01L21/561 , H01L21/76898 , H01L21/78 , H01L23/3114 , H01L23/481 , H01L23/5226 , H01L23/525 , H01L24/03 , H01L24/19 , H01L24/20 , H01L24/80 , H01L24/92 , H01L24/97 , H01L25/0657 , H01L2224/8001 , H01L2224/80896 , H01L2224/80948 , H01L2224/9222 , H01L2224/97 , H01L2225/06541 , H01L2225/06544 , H01L2224/80001 , H01L2224/19
摘要： A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.
摘要翻译： 提供一种半导体器件和方法，其使用单个掩模来形成用于贯穿衬底通孔以及通过电介质通孔的开口。 在一个实施例中，接触蚀刻停止层沉积在第一半导体器件和第二半导体器件之上和之间。 介电材料沉积在第一半导体器件和第二半导体器件之间的接触蚀刻停止层上。 使用接触蚀刻停止层和电介质材料的不同材料，使得可以使用单个掩模来通过第一半导体器件形成通孔基板，并且还通过电介质材料形成通孔电介质通孔。
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公开(公告)号：US20170194286A1
公开(公告)日：2017-07-06
申请号：US15463923
申请日：2017-03-20
发明人： Cheng-Chun Tsai , Hung-Pin Chang , Ku-Feng Yang , Yi-Hsiu Chen , Wen-Chih Chiou
IPC分类号： H01L23/00 , H01L21/306 , H01L25/065 , H01L21/78
CPC分类号： H01L24/94 , H01L21/30608 , H01L21/486 , H01L21/561 , H01L21/76898 , H01L21/78 , H01L23/3114 , H01L23/481 , H01L23/5226 , H01L23/525 , H01L24/03 , H01L24/19 , H01L24/20 , H01L24/80 , H01L24/92 , H01L24/97 , H01L25/0657 , H01L2224/8001 , H01L2224/80896 , H01L2224/80948 , H01L2224/9222 , H01L2224/97 , H01L2225/06541 , H01L2225/06544 , H01L2224/80001 , H01L2224/19
摘要： A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.
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公开(公告)号：US09601410B2
公开(公告)日：2017-03-21
申请号：US14591809
申请日：2015-01-07
发明人： Cheng-Chun Tsai , Hung-Pin Chang , Ku-Feng Yang , Yi-Hsiu Chen , Wen-Chih Chiou
IPC分类号： H01L23/04 , H01L23/48 , H01L23/00 , H01L21/768 , H01L21/48
CPC分类号： H01L24/94 , H01L21/30608 , H01L21/486 , H01L21/561 , H01L21/76898 , H01L21/78 , H01L23/3114 , H01L23/481 , H01L23/5226 , H01L23/525 , H01L24/03 , H01L24/19 , H01L24/20 , H01L24/80 , H01L24/92 , H01L24/97 , H01L25/0657 , H01L2224/8001 , H01L2224/80896 , H01L2224/80948 , H01L2224/9222 , H01L2224/97 , H01L2225/06541 , H01L2225/06544 , H01L2224/80001 , H01L2224/19
摘要： A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.
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公开(公告)号：US11830861B2
公开(公告)日：2023-11-28
申请号：US17029065
申请日：2020-09-23
发明人： Yu-Kuang Liao , Cheng-Chun Tsai , Chen-Hua Yu , Fang-Cheng Chen , Wen-Chih Chiou , Ping-Jung Wu
CPC分类号： H01L25/167 , G02B6/1225 , G02B6/1226 , G02B6/4201 , H01L23/29 , H01L23/5226 , H01L24/17 , H04B10/40
摘要： A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver, the second optical transceiver, and the third optical transceiver are stacked in sequential order. The first optical transceiver and the third optical transceiver respectively at least one optical input/output portion for transmitting and receiving an optical signal. The plasmonic waveguide includes a first segment, a second segment, and a third segment optically coupled to one another. The first segment is embedded in the first optical transceiver. The second segment extends through the second optical transceiver. The third segment is embedded in the third optical transceiver. The first segment is optically coupled to the at least one optical input/output portion of the first optical transceiver and the third segment is optically coupled to the at least one optical input/output portion of the third optical transceiver.
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公开(公告)号：US20210005591A1
公开(公告)日：2021-01-07
申请号：US17029065
申请日：2020-09-23
发明人： Yu-Kuang Liao , Cheng-Chun Tsai , Chen-Hua Yu , Fang-Cheng Chen , Wen-Chih Chiou , Ping-Jung Wu
摘要： A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver, the second optical transceiver, and the third optical transceiver are stacked in sequential order. The first optical transceiver and the third optical transceiver respectively at least one optical input/output portion for transmitting and receiving an optical signal. The plasmonic waveguide includes a first segment, a second segment, and a third segment optically coupled to one another. The first segment is embedded in the first optical transceiver. The second segment extends through the second optical transceiver. The third segment is embedded in the third optical transceiver. The first segment is optically coupled to the at least one optical input/output portion of the first optical transceiver and the third segment is optically coupled to the at least one optical input/output portion of the third optical transceiver.
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公开(公告)号：US10269761B2
公开(公告)日：2019-04-23
申请号：US15463923
申请日：2017-03-20
发明人： Cheng-Chun Tsai , Hung-Pin Chang , Ku-Feng Yang , Yi-Hsiu Chen , Wen-Chih Chiou
IPC分类号： H01L23/00 , H01L23/48 , H01L21/768 , H01L21/306 , H01L21/78 , H01L25/065 , H01L21/48 , H01L23/31 , H01L23/522 , H01L23/525 , H01L21/56
摘要： A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.
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