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公开(公告)号：US11942541B2
公开(公告)日：2024-03-26
申请号：US17461855
申请日：2021-08-30
发明人： Hong-Shyang Wu , Kuo-Ming Wu
CPC分类号： H01L29/7816 , H01L29/0873 , H01L29/6656 , H01L29/66689
摘要： A semiconductor device including a substrate, a source region, a drain region, a first gate structure and a second gate structure is provided. The source region and a drain region are formed in the substrate. The first gate structure is formed on the substrate and adjacent to the source region. The second gate structure is formed on the substrate and adjacent to the drain region. The second gate structure is electrically coupled to the drain region.
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公开(公告)号：US20230275149A1
公开(公告)日：2023-08-31
申请号：US17750907
申请日：2022-05-23
发明人： Hong-Shyang Wu , Kuo-Ming Wu
CPC分类号： H01L29/7825 , H01L29/0653 , H01L29/1095 , H01L29/66704
摘要： A gate-all-around (GAA) high voltage transistor of the laterally double-diffused metal-oxide semiconductor (LDMOS) type has a loop-shaped gate electrode disposed below a surface of a semiconductor substrate. The loop-shaped gate electrode surrounds a vertical channel formed by a first source/drain region, a body region, and a diffusion region. The first source/drain region is on top, the body region is in the middle, and the diffusion region is underneath. A loop-shaped shallow trench isolation (STI) region surrounds the loop-shaped gate electrode. The diffusion region begins inside the loop-shaped gate electrode, extends under the loop-shaped gate electrode and the loop-shaped STI region, and rises outside the loop-shaped STI region to join with a second source/drain region. This structure allows pitch to be reduced by 40% or linear drive current to be doubled in comparison to an asymmetric NMOS transistor providing otherwise equivalent functionality.
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公开(公告)号：US20240047574A1
公开(公告)日：2024-02-08
申请号：US17882390
申请日：2022-08-05
发明人： Hong-Shyang Wu , Kuo-Ming Wu
CPC分类号： H01L29/7816 , H01L29/404 , H01L29/0653 , H01L29/1095 , H01L29/66681
摘要： A semiconductor device includes a first well of a first conductivity type near a surface of a semiconductor substrate, and a second well of a second conductivity type near the surface of the semiconductor substrate. The semiconductor device includes a transistor comprising: (i) a first source/drain region formed in the first well; (ii) a second source/drain region formed in the second well; and (iii) a gate structure formed near the surface of the semiconductor substrate and separated from the second source/drain region at least with a portion of a third well of the second conductive type. The semiconductor device includes an isolation structure formed near the surface of the semiconductor substrate and further separating the second source/drain region from the gate structure. The semiconductor device includes a plurality of field plates formed above at least one of the portion of the third well or the isolation structure.
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公开(公告)号：US11855158B2
公开(公告)日：2023-12-26
申请号：US17301219
申请日：2021-03-29
发明人： Hong-Shyang Wu , Kuo-Ming Wu
CPC分类号： H01L29/408 , H01L29/402 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7816 , H01L29/7835 , H01L29/1045
摘要： A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a gate structure formed on the substrate; a source region and a drain region formed in the substrate on either side of the gate structure, the source region and the drain region both having a first type of conductivity; and a dielectric layer having a first portion and a second portion, wherein the first portion of the dielectric layer is formed on a portion of the gate structure, and the second portion of the dielectric layer is formed on the substrate and extending to a portion of the drain region, wherein the dielectric layer includes at least one recess on the second portion. An associated fabricating method is also disclosed.
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5.发明公开公开(公告)号：US20230380238A1
公开(公告)日：2023-11-23
申请号：US17749295
申请日：2022-05-20
发明人： Hong-Shyang Wu , Kuo-Ming Wu
IPC分类号： H01L27/32 , G02F1/1335
CPC分类号： H01L27/322 , G02F1/133514 , H01L27/3232 , G02F2202/32 , B82Y20/00
摘要： In a color display, a color filter layer includes a dielectric layer with an array of photonic crystals, an electroluminescent material disposed on the color filter layer, and electrodes arranged to electrically energize the electroluminescent material to output white light. Each photonic crystal includes a two-dimensional (2D) array of features. The 2D array of features includes a central cavity within which the features of the 2D array of features are omitted. Each photonic crystal is tuned to a resonant wavelength by a periodicity of the two-dimensional array of features. The array of photonic crystals may include, for example, red, green, and blue photonic crystals arranged to form an array of pixels spanning a display area of the color display, in which each pixel includes at least one red photonic crystal, at least one green photonic crystal, and at least one blue photonic crystal.
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公开(公告)号：US10121867B2
公开(公告)日：2018-11-06
申请号：US15147635
申请日：2016-05-05
发明人： Hong-Shyang Wu , Kuo-Ming Wu
摘要： A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a gate structure formed on the substrate; a source region and a drain region formed in the substrate on either side of the gate structure, the source region and the drain region both having a first type of conductivity; and a dielectric layer having a first portion and a second portion, wherein the first portion of the dielectric layer is formed on a portion of the gate structure, and the second portion of the dielectric layer is formed on the substrate and extending to a portion of the drain region, wherein the dielectric layer includes at least one recess on the second portion. An associated fabricating method is also disclosed.
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7.发明授权公开(公告)号：US11848321B2
公开(公告)日：2023-12-19
申请号：US17238987
申请日：2021-04-23
发明人： Hong-Shyang Wu , Kuo-Ming Wu
IPC分类号： H01L27/02
CPC分类号： H01L27/0259
摘要： A semiconductor device is provided. The semiconductor device comprises an output circuit configured to be electrically connected between a driving circuit and an external load circuit, and a protection circuit electrically connected to the output circuit and the driving circuit. The protection circuit comprises a first transistor having a base electrode, a collector electrode and an emitter electrode and a second transistor having a base electrode, a collector electrode and an emitter electrode. The base electrode of the first transistor is electrically connected to the collector electrode of the second transistor.
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8.发明公开公开(公告)号：US20230389387A1
公开(公告)日：2023-11-30
申请号：US18231897
申请日：2023-08-09
发明人： Hong-Shyang Wu , Kuo-Ming Wu
IPC分类号： H10K59/38 , H10K59/50 , G02F1/1335
CPC分类号： H10K59/38 , H10K59/50 , G02F1/133514 , B82Y20/00
摘要： In a color display, a color filter layer includes a dielectric layer with an array of photonic crystals, an electroluminescent material disposed on the color filter layer, and electrodes arranged to electrically energize the electroluminescent material to output white light. Each photonic crystal includes a two-dimensional (2D) array of features. The 2D array of features includes a central cavity within which the features of the 2D array of features are omitted. Each photonic crystal is tuned to a resonant wavelength by a periodicity of the two-dimensional array of features. The array of photonic crystals may include, for example, red, green, and blue photonic crystals arranged to form an array of pixels spanning a display area of the color display, in which each pixel includes at least one red photonic crystal, at least one green photonic crystal, and at least one blue photonic crystal.
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公开(公告)号：US11832496B1
公开(公告)日：2023-11-28
申请号：US17749295
申请日：2022-05-20
发明人： Hong-Shyang Wu , Kuo-Ming Wu
IPC分类号： H10K59/38 , G02F1/1335 , H10K59/50 , B82Y20/00 , H10K59/12
CPC分类号： H10K59/38 , G02F1/133514 , H10K59/50 , B82Y20/00 , G02F2202/32 , H10K59/1201
摘要： In a color display, a color filter layer includes a dielectric layer with an array of photonic crystals, an electroluminescent material disposed on the color filter layer, and electrodes arranged to electrically energize the electroluminescent material to output white light. Each photonic crystal includes a two-dimensional (2D) array of features. The 2D array of features includes a central cavity within which the features of the 2D array of features are omitted. Each photonic crystal is tuned to a resonant wavelength by a periodicity of the two-dimensional array of features. The array of photonic crystals may include, for example, red, green, and blue photonic crystals arranged to form an array of pixels spanning a display area of the color display, in which each pixel includes at least one red photonic crystal, at least one green photonic crystal, and at least one blue photonic crystal.
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公开(公告)号：US10964789B2
公开(公告)日：2021-03-30
申请号：US16046354
申请日：2018-07-26
发明人： Hong-Shyang Wu , Kuo-Ming Wu
摘要： A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a gate structure formed on the substrate; a source region and a drain region formed in the substrate on either side of the gate structure, the source region and the drain region both having a first type of conductivity; and a dielectric layer having a first portion and a second portion, wherein the first portion of the dielectric layer is formed on a portion of the gate structure, and the second portion of the dielectric layer is formed on the substrate and extending to a portion of the drain region, wherein the dielectric layer includes at least one recess on the second portion. An associated fabricating method is also disclosed.
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