公开(公告)号：US20190067132A1

公开(公告)日：2019-02-28

申请号：US15800568

申请日：2017-11-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Chih LAI ,  Li-Kai CHENG ,  Shun-Rong CHEN ,  Bo-Tsun LIU ,  Han-Lung CHANG ,  Tzung-Chi FU ,  Li-Jui CHEN

IPC分类号： H01L21/66 ,  H01L21/027 ,  H01L21/67 ,  G03F7/20

CPC分类号： H01L22/12 ,  G03F7/2004 ,  H01L21/0274 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67225 ,  H01L21/67253 ,  H01L21/67288

摘要： A method for performing a lithographic process over a semiconductor wafer is provided. The method includes coating a photoresist layer over a material layer which is formed on the semiconductor wafer in a track apparatus. The method further includes transferring the semiconductor wafer from the track apparatus to an exposure apparatus. The method also includes measuring a height of the photoresist layer before the removal of the semiconductor wafer from the track apparatus. In addition, the method includes measuring height of the material layer in the exposure apparatus. The method also includes determining a focal length for exposing the semiconductor wafer according to the height of the photoresist layer and the height of the material layer.

公开(公告)号：US20190150263A1

公开(公告)日：2019-05-16

申请号：US15906787

申请日：2018-02-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wei-Chih LAI ,  Han-Lung CHANG ,  Chi YANG ,  Shang-Chieh CHIEN ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC分类号： H05G2/00

摘要： A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

公开(公告)号：US20190150266A1

公开(公告)日：2019-05-16

申请号：US16178157

申请日：2018-11-01

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wei-Chih LAI ,  Han-Lung CHANG ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC分类号： H05G2/00 ,  G03F7/20

摘要： A droplet generator for an extreme ultraviolet imaging tool includes a reservoir for a molten metal, and a nozzle having a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. A gas inlet is connected to the nozzle, and an isolation valve is at the second end of the nozzle configured to seal the nozzle droplet generator from the ambient.

公开(公告)号：US20150102472A1

公开(公告)日：2015-04-16

申请号：US14050628

申请日：2013-10-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chung-Hao TSAI ,  Wei-Chih LAI ,  Chuei-Tang WANG ,  Chen-Hua YU

IPC分类号： H01L23/552 ,  H01L23/532 ,  H01L23/00 ,  H01L23/528

CPC分类号： H01L23/552 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/5225 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/00014

摘要： A semiconductor device includes a semiconductor substrate, a dielectric layer, a passivation layer, a protective layer, a post-passivation interconnect (PPI) structure, and a shielding layer. The semiconductor substrate has electrical circuitry. The dielectric layer is formed on the semiconductor substrate. The passivation layer is formed on the dielectric layer. The first protective layer is formed on the passivation layer. The PPI structure is disposed on the first protective layer and has a signal line and a ground line. The shielding layer is disposed over the semiconductor substrate and between the signal line and the electrical circuitry. The shielding layer is substantially equi-potentially connected to the ground line of the PPI structure.

摘要翻译： 半导体器件包括半导体衬底，电介质层，钝化层，保护层，钝化后互连（PPI）结构和屏蔽层。 半导体衬底具有电路。 介电层形成在半导体衬底上。 钝化层形成在电介质层上。 第一保护层形成在钝化层上。 PPI结构设置在第一保护层上，并具有信号线和接地线。 屏蔽层设置在半导体衬底之上并且在信号线和电路之间。 屏蔽层基本上等同地连接到PPI结构的接地线。

公开(公告)号：US20190150262A1

公开(公告)日：2019-05-16

申请号：US15906574

申请日：2018-02-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wei-Chih LAI ,  Han-Lung CHANG ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC分类号： H05G2/00

CPC分类号： H05G2/006 ,  H05G2/008

摘要： A method of controlling an excitation laser includes detecting, at a droplet generator, a first signal of radiation scattered by a given target droplet irradiated by a first radiation source at a first position. The method of controlling the excitation laser further includes detecting, at the droplet generator, a second signal of radiation scattered by the given target droplet irradiated by a second radiation source at a second position a fixed distance away from the first position, and determining a speed of the given target droplet based on a time lag between the detecting of the first signal and the detecting of the second signal. The method further includes controlling a trigger time for triggering an excitation pulse for heating the given target droplet based on the determined speed of the given target droplet.