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公开(公告)号：US20240168387A1
公开(公告)日：2024-05-23
申请号：US18429281
申请日：2024-01-31
发明人： Tung-Jung CHANG , Jen-Yang CHUNG , Han-Lung CHANG
CPC分类号： G03F7/70608 , G03F1/66 , G03F1/84 , G03F7/70741
摘要： A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.
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公开(公告)号：US20200075190A1
公开(公告)日：2020-03-05
申请号：US16551294
申请日：2019-08-26
发明人： Ting-Ya CHENG , Chun-Lin CHANG , Li-Jui CHEN , Han-Lung CHANG
摘要： An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.
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公开(公告)号：US20190067132A1
公开(公告)日：2019-02-28
申请号：US15800568
申请日：2017-11-01
发明人： Wei-Chih LAI , Li-Kai CHENG , Shun-Rong CHEN , Bo-Tsun LIU , Han-Lung CHANG , Tzung-Chi FU , Li-Jui CHEN
IPC分类号： H01L21/66 , H01L21/027 , H01L21/67 , G03F7/20
CPC分类号： H01L22/12 , G03F7/2004 , H01L21/0274 , H01L21/67103 , H01L21/67109 , H01L21/6715 , H01L21/67173 , H01L21/67225 , H01L21/67253 , H01L21/67288
摘要： A method for performing a lithographic process over a semiconductor wafer is provided. The method includes coating a photoresist layer over a material layer which is formed on the semiconductor wafer in a track apparatus. The method further includes transferring the semiconductor wafer from the track apparatus to an exposure apparatus. The method also includes measuring a height of the photoresist layer before the removal of the semiconductor wafer from the track apparatus. In addition, the method includes measuring height of the material layer in the exposure apparatus. The method also includes determining a focal length for exposing the semiconductor wafer according to the height of the photoresist layer and the height of the material layer.
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公开(公告)号：US20220342321A1
公开(公告)日：2022-10-27
申请号：US17478300
申请日：2021-09-17
发明人： Tung-Jung CHANG , Jen-Yang CHUNG , Han-Lung CHANG
IPC分类号： G03F7/20
摘要： A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.
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5.发明申请公开(公告)号：US20220011675A1
公开(公告)日：2022-01-13
申请号：US16926489
申请日：2020-07-10
发明人： Ting-Ya CHENG , Han-Lung CHANG , Shi-Han SHANN , Li-Jui CHEN , Yen-Shuo SU
摘要： A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
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公开(公告)号：US20210227676A1
公开(公告)日：2021-07-22
申请号：US17135768
申请日：2020-12-28
发明人： Wei-Shin CHENG , Han-Lung CHANG , Li-Jui CHEN , Po-Chung CHENG , Hsiao-Lun CHANG
摘要： A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.
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公开(公告)号：US20190150263A1
公开(公告)日：2019-05-16
申请号：US15906787
申请日：2018-02-27
发明人： Wei-Chih LAI , Han-Lung CHANG , Chi YANG , Shang-Chieh CHIEN , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
IPC分类号： H05G2/00
摘要： A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.
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公开(公告)号：US20230060598A1
公开(公告)日：2023-03-02
申请号：US17463328
申请日：2021-08-31
发明人： Yi-Zhen CHEN , Yen-Hsun CHEN , Jhan-Hong YEH , Tzung-Chi FU , Han-Lung CHANG , Li-Jui CHEN
IPC分类号： G03F7/20
摘要： An EUV photolithography system utilizes a baseplate of an EUV pod to unload an EUV reticle from a chuck within an EUV scanner. The baseplate includes a top surface and support pins extending from the top surface. The when the reticle is unloaded onto the baseplate, the support pins hold the reticle at relatively large distance from the top surface of the baseplate. The support pins have a relatively low resistance. The large distance and low resistance help ensure that particles do not travel from the baseplate to the reticle during unloading.
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公开(公告)号：US20210298161A1
公开(公告)日：2021-09-23
申请号：US17338441
申请日：2021-06-03
发明人： Shih-Yu TU , Han-Lung CHANG , Hsiao-Lun CHANG , Li-Jui CHEN , Po-Chung CHENG
IPC分类号： H05G2/00
摘要： A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.
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公开(公告)号：US20200033194A1
公开(公告)日：2020-01-30
申请号：US16438710
申请日：2019-06-12
发明人： Jen-Hao YEH , Chun-Lin CHANG , Han-Lung CHANG , Li-Jui CHEN , Po-Chung CHENG
摘要： A light source system is provided. The light source system is capable of measuring a polarization angle and includes a light source configured to emit an original light beam, and the original light beam has an original polarization angle. The light source system further includes an amplifying module configured to amplify the original light beam and generate a forward beam for hitting a target, and the forward beam has a forward polarization angle that is equal to the original polarization angle. The light source system further includes a polarization measurement unit, and the polarization measurement unit includes a first polarization measurement module configured to receive a first return beam and measure a first polarization angle of the first return beam. The first return beam is reflected from the target.
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