-
1.发明公开公开(公告)号：US20230324804A1
公开(公告)日：2023-10-12
申请号：US18334640
申请日：2023-06-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chih-Tsung SHIH , Yu-Hsun WU , Bo-Tsun LIU , Tsung-Chuan LEE
CPC classification number: G03F7/2004 , G03F1/24
Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.
-
2.发明申请公开(公告)号：US20220326598A1
公开(公告)日：2022-10-13
申请号：US17848139
申请日：2022-06-23
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chih-Tsung SHIH , Yu-Hsun WU , Bo-Tsun LIU , Tsung-Chuan LEE
Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.
-
公开(公告)号：US20190150266A1
公开(公告)日：2019-05-16
申请号：US16178157
申请日：2018-11-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wei-Chih LAI , Han-Lung CHANG , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A droplet generator for an extreme ultraviolet imaging tool includes a reservoir for a molten metal, and a nozzle having a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. A gas inlet is connected to the nozzle, and an isolation valve is at the second end of the nozzle configured to seal the nozzle droplet generator from the ambient.
-
公开(公告)号：US20190150265A1
公开(公告)日：2019-05-16
申请号：US15868373
申请日：2018-01-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chieh HSIEH , Shang-Chieh CHIEN , Chun-Chia HSU , Bo-Tsun LIU , Tzung-CHI FU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A method for generating light is provided. The method includes generating targets with a fuel target generator. The method further includes measuring a period of time during which one of the targets passes through two detection positions on a path along which the targets move. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the fuel target generator or the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value.
-
公开(公告)号：US20190067132A1
公开(公告)日：2019-02-28
申请号：US15800568
申请日：2017-11-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wei-Chih LAI , Li-Kai CHENG , Shun-Rong CHEN , Bo-Tsun LIU , Han-Lung CHANG , Tzung-Chi FU , Li-Jui CHEN
IPC: H01L21/66 , H01L21/027 , H01L21/67 , G03F7/20
CPC classification number: H01L22/12 , G03F7/2004 , H01L21/0274 , H01L21/67103 , H01L21/67109 , H01L21/6715 , H01L21/67173 , H01L21/67225 , H01L21/67253 , H01L21/67288
Abstract: A method for performing a lithographic process over a semiconductor wafer is provided. The method includes coating a photoresist layer over a material layer which is formed on the semiconductor wafer in a track apparatus. The method further includes transferring the semiconductor wafer from the track apparatus to an exposure apparatus. The method also includes measuring a height of the photoresist layer before the removal of the semiconductor wafer from the track apparatus. In addition, the method includes measuring height of the material layer in the exposure apparatus. The method also includes determining a focal length for exposing the semiconductor wafer according to the height of the photoresist layer and the height of the material layer.
-
Patent Agency Ranking
6.发明申请公开(公告)号：US20210389661A1
公开(公告)日：2021-12-16
申请号：US16900384
申请日：2020-06-12
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chih-Tsung SHIH , Yu-Hsun WU , Bo-Tsun LIU , Tsung-Chuan LEE
Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.
-
7.发明申请公开(公告)号：US20200348607A1
公开(公告)日：2020-11-05
申请号：US16927142
申请日：2020-07-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
-
公开(公告)号：US20200142318A1
公开(公告)日：2020-05-07
申请号：US16715808
申请日：2019-12-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Feng CHEN , Han-Lung CHANG , Li-Jui CHEN , Bo-Tsun LIU
Abstract: A method for generating a radiation light in a lithography exposure system is provided. The method includes connecting a first nozzle assembly coupled to a support to an outlet of a storage member that receives a target fuel inside. The method further includes guiding the target fuel flowing through the first nozzle assembly and supplying a droplet of the target fuel into an excitation zone via the first nozzle assembly. The method also includes moving the support to connect a second nozzle assembly coupled to the support with the outlet. In addition, the method includes guiding the target fuel flowing through the second nozzle assembly and supplying a droplet of the target fuel into the excitation zone via the second nozzle assembly. The method further includes irradiating the droplet of the target fuel in the excitation zone with a laser pulse.
-
9.发明申请公开(公告)号：US20200073261A1
公开(公告)日：2020-03-05
申请号：US16675921
申请日：2019-11-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.
-
公开(公告)号：US20200025688A1
公开(公告)日：2020-01-23
申请号：US16587010
申请日：2019-09-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis CHANG , Shang-Chieh CHIEN , Shang-Ying WU , Li-Kai CHENG , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG , Anthony YEN , Chia-Chen CHEN
IPC: G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/94 , G01N21/954
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
-
-
-
-
-
-
-
-
-
Search Results
28
records
(took 0.018 seconds)
