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    LIGHT SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS
    3.
    发明申请
    LIGHT SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS 审中-公开

    公开(公告)号：US20200068696A1

    公开(公告)日：2020-02-27

    申请号：US16671347

    申请日：2019-11-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Chun-Chia HSU ,  Bo-Tsun LIU ,  Tzung-CHI FU ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: H05G2/00 ,  G03F7/20

    Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value, wherein the parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

    EUV RADIATION SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS
    5.
    发明申请
    EUV RADIATION SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS 审中-公开

    公开(公告)号：US20200045800A1

    公开(公告)日：2020-02-06

    申请号：US16149643

    申请日：2018-10-02

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Chia HSU ,  Kuan-Hung CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: H05G2/00 ,  G21K1/06 ,  G03F7/20

    Abstract: An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.

    ESD STRUCTURE AND SEMICONDUCTOR STRUCTURE
    6.
    发明申请
    ESD STRUCTURE AND SEMICONDUCTOR STRUCTURE 有权

    公开(公告)号：US20220059524A1

    公开(公告)日：2022-02-24

    申请号：US16996986

    申请日：2020-08-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Chia HSU ,  Tung-Heng HSIEH ,  Yung-Feng CHANG ,  Bao-Ru YOUNG ,  Jam-Wem LEE ,  Chih-Hung WANG

    IPC: H01L27/02 ,  H01L29/861 ,  H01L29/06

    Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of first semiconductor layers and a plurality of second semiconductor layers. The first semiconductor layers and the second semiconductor layers are alternatingly stacked over the semiconductor substrate and between the first and second epitaxy regions. Each of the first and second semiconductor layers has a first side contacting the first epitaxy region and a second side contacting the second epitaxy region, and the first side is opposite the second side.

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