公开(公告)号：US20200057382A1

公开(公告)日：2020-02-20

申请号：US16535003

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh HSIEH ,  Kuan-Hung CHEN ,  Chun-Chia HSU ,  Shang-Chieh CHIEN ,  Liu BO-TSUN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US20200178380A1

公开(公告)日：2020-06-04

申请号：US16697149

申请日：2019-11-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuan-Hung CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G03F7/20

Abstract: A lithography apparatus includes an extreme ultraviolet (EUV) scanner, an EUV source coupled to the EUV scanner, a quartz crystal microbalance and a feedback controller. The quartz crystal microbalance is disposed on an internal surface of at least one of the EUV source and the EUV scanner. The feedback controller is coupled to the quartz crystal microbalance and one or more of a radiation source, a droplet generator, and optical guide elements controlling the trajectory of the radiation source associated with the EUV source.

公开(公告)号：US20210041787A1

公开(公告)日：2021-02-11

申请号：US17068197

申请日：2020-10-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh HSIEH ,  Kuan-Hung CHEN ,  Chun-Chia HSU ,  Shang-Chieh CHIEN ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US20200045800A1

公开(公告)日：2020-02-06

申请号：US16149643

申请日：2018-10-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia HSU ,  Kuan-Hung CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G21K1/06 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.

公开(公告)号：US20200133136A1

公开(公告)日：2020-04-30

申请号：US16261695

申请日：2019-01-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuan-Hung CHEN ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: A method for operating a semiconductor apparatus includes generating a plurality of target droplets, deforming the target droplets into a plurality of target plumes respectively, changing an orientation of at least one of the target plumes, and generating a plurality of EUV radiations from the target plumes respectively. At least one of the EUV radiations irradiates an area on the light collector different from other EUV radiations in response to the orientation of the at least one of the target plumes.