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公开(公告)号：US20240251568A1
公开(公告)日：2024-07-25
申请号：US18626670
申请日：2024-04-04
发明人： Tai-Yen Peng , Tsung-Hsien Chang , Yu-Shu Chen , Chih-Yuan Ting , Jyu-Horng Shieh , Chung-Te Lin
CPC分类号： H10B61/22 , H10N50/01 , H10N50/10 , G11C11/1659
摘要： A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.
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公开(公告)号：US11980040B2
公开(公告)日：2024-05-07
申请号：US17346855
申请日：2021-06-14
发明人： Tai-Yen Peng , Tsung-Hsien Chang , Yu-Shu Chen , Chih-Yuan Ting , Jyu-Horng Shieh , Chung-Te Lin
CPC分类号： H10B61/22 , H10N50/01 , H10N50/10 , G11C11/1659
摘要： A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.
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公开(公告)号：US20210313396A1
公开(公告)日：2021-10-07
申请号：US17346855
申请日：2021-06-14
发明人： Tai-Yen Peng , Tsung-Hsien Chang , Yu-Shu Chen , Chih-Yuan Ting , Jyu-Horng Shieh , Chung-Te Lin
摘要： A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.
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