公开(公告)号：US20210343709A1

公开(公告)日：2021-11-04

申请号：US16863371

申请日：2020-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh-Ping WANG ,  Tai-Chun HUANG ,  Yung-Cheng LU ,  Ting-Gang CHEN ,  Chi On CHUI

IPC: H01L27/088 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/105

Abstract: A semiconductor device with isolation structures of different dielectric constants and a method of fabricating the same are disclosed. The semiconductor device includes fin structures with first and second fin portions disposed on first and second device areas on a substrate and first and second pair of gate structures disposed on the first and second fin portions. The second pair of gate structures is electrically isolated from the first pair of gate structures. The semiconductor device further includes a first isolation structure interposed between the first pair of gate structures and a second isolation structure interposed between the second pair of gate structures. The first isolation structure includes a first nitride liner and a first oxide fill layer. The second isolation structure includes a second nitride liner and a second oxide fill layer. The second nitride liner is thicker than the first nitride liner.

公开(公告)号：US20170342561A1

公开(公告)日：2017-11-30

申请号：US15169037

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Mo LIN ,  Yi-Hung LIN ,  Jr-Hung LI ,  Tze-Liang LEE ,  Ting-Gang CHEN ,  Chung-Ting KO

IPC: C23C16/455 ,  H01L21/687 ,  C23C16/509 ,  H01J37/32 ,  H01L21/285 ,  H01L21/02

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.