公开(公告)号：US10693019B2

公开(公告)日：2020-06-23

申请号：US16113028

申请日：2018-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Li Cheng ,  Jyun-Ying Lin ,  Jing-Hwang Yang ,  Ting-Chen Hsu ,  Felix Ying-Kit Tsui ,  Yen-Wen Chen

IPC: H01L49/02 ,  H01L27/06 ,  H01L29/94 ,  H01L29/66

Abstract: Various embodiments of the present application are directed towards a trench capacitor with a high capacitance density. In some embodiments, the trench capacitor overlies the substrate and fills a trench defined by the substrate. The trench capacitor comprises a lower capacitor electrode, a capacitor dielectric layer, and an upper capacitor electrode. The capacitor dielectric layer overlies the lower capacitor electrode and lines the trench. The upper capacitor electrode overlies the capacitor dielectric layer and lines the trench over the capacitor dielectric layer. The capacitor dielectric layer comprises a high κ dielectric material. By using a high κ material for the dielectric layer, the trench capacitor may have a high capacitance density suitable for use with high performance mobile devices.

公开(公告)号：US11063157B1

公开(公告)日：2021-07-13

申请号：US16728452

申请日：2019-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Li Cheng ,  Jyun-Ying Lin ,  Alexander Kalnitsky ,  Shih-Fen Huang ,  Shu-Hui Su ,  Ting-Chen Hsu ,  Tuo-Hsin Chien ,  Felix Ying-Kit Tsui ,  Shi-Min Wu ,  Yu-Chi Chang

IPC: H01L29/94 ,  H01L49/02 ,  H01L23/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/764

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a pillar structure abutting a trench capacitor. A substrate has sidewalls that define a trench. The trench extends into a front-side surface of the substrate. The trench capacitor includes a plurality of capacitor electrode layers and a plurality of capacitor dielectric layers that respectively line the trench and define a cavity within the substrate. The pillar structure is disposed within the substrate. The pillar structure has a first width and a second width less than the first width. The first width is aligned with the front-side surface of the substrate and the second width is aligned with a first point disposed beneath the front-side surface.

公开(公告)号：US20210202761A1

公开(公告)日：2021-07-01

申请号：US16728452

申请日：2019-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Li Cheng ,  Jyun-Ying Lin ,  Alexander Kalnitsky ,  Shih-Fen Huang ,  Shu-Hui Su ,  Ting-Chen Hsu ,  Tuo-Hsin Chien ,  Felix Ying-Kit Tsui ,  Shi-Min Wu ,  Yu-Chi Chang

IPC: H01L29/94 ,  H01L49/02 ,  H01L23/00 ,  H01L21/764 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/66

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a pillar structure abutting a trench capacitor. A substrate has sidewalls that define a trench. The trench extends into a front-side surface of the substrate. The trench capacitor includes a plurality of capacitor electrode layers and a plurality of capacitor dielectric layers that respectively line the trench and define a cavity within the substrate. The pillar structure is disposed within the substrate. The pillar structure has a first width and a second width less than the first width. The first width is aligned with the front-side surface of the substrate and the second width is aligned with a first point disposed beneath the front-side surface.

公开(公告)号：US20200066922A1

公开(公告)日：2020-02-27

申请号：US16113028

申请日：2018-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Li Cheng ,  Jyun-Ying Lin ,  Jing-Hwang Yang ,  Ting-Chen Hsu ,  Felix Ying-Kit Tsui ,  Yen-Wen Chen

IPC: H01L29/94 ,  H01L49/02 ,  H01L29/66

Abstract: Various embodiments of the present application are directed towards a trench capacitor with a high capacitance density. In some embodiments, the trench capacitor overlies the substrate and fills a trench defined by the substrate. The trench capacitor comprises a lower capacitor electrode, a capacitor dielectric layer, and an upper capacitor electrode. The capacitor dielectric layer overlies the lower capacitor electrode and lines the trench. The upper capacitor electrode overlies the capacitor dielectric layer and lines the trench over the capacitor dielectric layer. The capacitor dielectric layer comprises a high κ dielectric material. By using a high κ material for the dielectric layer, the trench capacitor may have a high capacitance density suitable for use with high performance mobile devices.