公开(公告)号：US20210202761A1

公开(公告)日：2021-07-01

申请号：US16728452

申请日：2019-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Li Cheng ,  Jyun-Ying Lin ,  Alexander Kalnitsky ,  Shih-Fen Huang ,  Shu-Hui Su ,  Ting-Chen Hsu ,  Tuo-Hsin Chien ,  Felix Ying-Kit Tsui ,  Shi-Min Wu ,  Yu-Chi Chang

IPC: H01L29/94 ,  H01L49/02 ,  H01L23/00 ,  H01L21/764 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/66

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a pillar structure abutting a trench capacitor. A substrate has sidewalls that define a trench. The trench extends into a front-side surface of the substrate. The trench capacitor includes a plurality of capacitor electrode layers and a plurality of capacitor dielectric layers that respectively line the trench and define a cavity within the substrate. The pillar structure is disposed within the substrate. The pillar structure has a first width and a second width less than the first width. The first width is aligned with the front-side surface of the substrate and the second width is aligned with a first point disposed beneath the front-side surface.

公开(公告)号：US11063157B1

公开(公告)日：2021-07-13

申请号：US16728452

申请日：2019-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Li Cheng ,  Jyun-Ying Lin ,  Alexander Kalnitsky ,  Shih-Fen Huang ,  Shu-Hui Su ,  Ting-Chen Hsu ,  Tuo-Hsin Chien ,  Felix Ying-Kit Tsui ,  Shi-Min Wu ,  Yu-Chi Chang

IPC: H01L29/94 ,  H01L49/02 ,  H01L23/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/764

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a pillar structure abutting a trench capacitor. A substrate has sidewalls that define a trench. The trench extends into a front-side surface of the substrate. The trench capacitor includes a plurality of capacitor electrode layers and a plurality of capacitor dielectric layers that respectively line the trench and define a cavity within the substrate. The pillar structure is disposed within the substrate. The pillar structure has a first width and a second width less than the first width. The first width is aligned with the front-side surface of the substrate and the second width is aligned with a first point disposed beneath the front-side surface.