公开(公告)号：US11295956B2

公开(公告)日：2022-04-05

申请号：US16887218

申请日：2020-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Kao-Feng Lin ,  Min-Hsiu Hung ,  Yi-Hsiang Chao ,  Huang-Yi Huang ,  Yu-Ting Lin

IPC: H01L21/285 ,  H01L21/28 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

公开(公告)号：US20220230884A1

公开(公告)日：2022-07-21

申请号：US17712480

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Kao-Feng Lin ,  Min-Hsiu Hung ,  Yi-Hsiang Chao ,  Huang-Yi Huang ,  Yu-Ting Lin

IPC: H01L21/285 ,  H01L21/28 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

公开(公告)号：US10685842B2

公开(公告)日：2020-06-16

申请号：US15983216

申请日：2018-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Kao-Feng Lin ,  Min-Hsiu Hung ,  Yi-Hsiang Chao ,  Huang-Yi Huang ,  Yu-Ting Lin

IPC: H01L21/285 ,  H01L29/78 ,  H01L21/28 ,  H01L29/417 ,  H01L29/66 ,  H01L29/49

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

公开(公告)号：US11972951B2

公开(公告)日：2024-04-30

申请号：US17712480

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Kao-Feng Lin ,  Min-Hsiu Hung ,  Yi-Hsiang Chao ,  Huang-Yi Huang ,  Yu-Ting Lin

IPC: H01L21/285 ,  H01L21/28 ,  H01L29/417 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/28518 ,  H01L21/28061 ,  H01L29/41791 ,  H01L29/4933 ,  H01L29/66795 ,  H01L29/785 ,  H01L2029/7858

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

公开(公告)号：US11424185B2

公开(公告)日：2022-08-23

申请号：US16945595

申请日：2020-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Wei Chang ,  Chia-Hung Chu ,  Kao-Feng Lin ,  Hsu-Kai Chang ,  Shuen-Shin Liang ,  Sung-Li Wang ,  Yi-Ying Liu ,  Po-Nan Yeh ,  Yu Shih Wang ,  U-Ting Chiu ,  Chun-Neng Lin ,  Ming-Hsi Yeh

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/285 ,  H01L21/02

Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.