公开(公告)号：US20170200800A1

公开(公告)日：2017-07-13

申请号：US14990009

申请日：2016-01-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Ping LIU ,  Hung-Chang HSU ,  Hung-Wen SU ,  Ming-Hsing TSAI ,  Rueijer LIN ,  Sheng-Hsuan LIN ,  Ya-Lien LEE ,  Yen-Shou KAO

IPC: H01L29/45 ,  H01L21/311 ,  H01L29/51 ,  H01L21/768

CPC classification number: H01L29/456 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76832 ,  H01L21/76846 ,  H01L21/76856 ,  H01L29/511 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a first portion of the dielectric layer to form a first hole in the dielectric layer. A second portion of the dielectric layer is under the first hole. The method includes forming a first protection layer over the gate stack and the spacer layer. The method includes forming a second protection layer over the first protection layer. The second protection layer includes a metal compound material, and the first protection layer and the second protection layer includes a same metal element. The method includes removing the second portion of the dielectric layer to form a through hole. The method includes forming a conductive contact structure in the through hole.