公开(公告)号：US20190131436A1

公开(公告)日：2019-05-02

申请号：US15884395

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-En Cheng ,  Chun-Te Li ,  Kai-Hsuan Lee ,  Tien-I Bao ,  Wei-Ken Lin

IPC: H01L29/66 ,  H01L29/49 ,  H01L29/78 ,  H01L27/092 ,  H01L27/12 ,  H01L27/088 ,  H01L21/84 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/8234

Abstract: Field effect transistor and methods of forming the same are disclosed. The field effect transistor includes a gate electrode, a contact etch stop layer (CESL), an inter layer dielectric (ILD) and a protection layer. The CESL includes SiCON and is disposed on a sidewall of the gate electrode. The IDL is laterally adjacent to the gate electrode. The protection layer covers the CESL and is disposed between the CESL and the ILD.