Triple-pattern lithography layout decomposition

    公开(公告)号:US09471744B2

    公开(公告)日:2016-10-18

    申请号:US14819590

    申请日:2015-08-06

    CPC classification number: G06F17/5081 G03F7/0035 G06F17/509

    Abstract: Provided is a method for evaluating and decomposing a semiconductor device level for triple pattern lithography in semiconductor manufacturing. The method includes generating a conflict graph and simplifying the conflict graph using various methods to produce a simplified conflict graph which can either be further simplified or evaluated for decomposition validity. The disclosure also provides for applying decomposition validity rules to a simplified conflict graph to determine if the conflict graph represents a semiconductor device layer that is decomposable into three masks. Methods of the disclosure are carried out by a computer and instructions for carrying out the method may be stored on a computer readable storage medium.

    Multi-patterning conflict free integrated circuit design
    2.
    发明授权
    Multi-patterning conflict free integrated circuit design 有权
    多模式无冲突集成电路设计

    公开(公告)号:US09026971B1

    公开(公告)日:2015-05-05

    申请号:US14148898

    申请日:2014-01-07

    Abstract: The present disclosure relates to a method and apparatus for forming a multiple patterning lithograph (MPL) compliant integrated circuit layout by operating a construction validation check on unassembled IC cells to enforce design restrictions that prevent MPL conflicts after assembly. In some embodiments, the method is performed by generating a plurality of unassembled integrated circuit (IC) cells having a multiple patterning design layer. A construction validation check is performed on the unassembled IC cells to identify violating IC cells having shapes disposed in patterns comprising potential multiple patterning coloring conflicts. Design shapes within a violating IC cell are adjusted to achieve a plurality of violation free IC cells. The plurality of violation free IC cells are then assembled to form an MPL compliant IC layout. Since the MPL compliant IC layout is free of coloring conflicts, a decomposition algorithm can be operated without performing a post assembly color conflict check.

    Abstract translation: 本发明涉及一种用于通过对未组装的IC单元进行构造验证检查以形成在组装之后防止MPL冲突的设计限制来形成多重图案化平版印刷术(MPL)兼容集成电路布局的方法和装置。 在一些实施例中,该方法通过产生具有多个图案化设计层的多个未组装的集成电路(IC)单元来执行。 在未组装的IC细胞上进行结构验证检查,以识别具有以包含潜在的多个图案化着色冲突的图案布置的形状的违反IC细胞。 调整违规IC单元内的设计形状,以实现多个无冲突的IC单元。 然后组合多个违规免费IC电池以形成符合MPL的IC布局。 由于MPL兼容IC布局没有着色冲突,因此可以在不执行后期组合颜色冲突检查的情况下操作分解算法。

    Triple-pattern lithography layout decomposition
    3.
    发明授权
    Triple-pattern lithography layout decomposition 有权
    三模光刻布局分解

    公开(公告)号:US09122838B2

    公开(公告)日:2015-09-01

    申请号:US14302684

    申请日:2014-06-12

    CPC classification number: G06F17/5081 G03F7/0035 G06F17/509

    Abstract: Provided is a method for evaluating and decomposing a semiconductor device level for triple pattern lithography in semiconductor manufacturing. The method includes generating a conflict graph and simplifying the conflict graph using various methods to produce a simplified conflict graph which can either be further simplified or evaluated for decomposition validity. The disclosure also provides for applying decomposition validity rules to a simplified conflict graph to determine if the conflict graph represents a semiconductor device layer that is decomposable into three masks. Methods of the disclosure are carried out by a computer and instructions for carrying out the method may be stored on a computer readable storage medium.

    Abstract translation: 提供了一种用于在半导体制造中评估和分解用于三重图案光刻的半导体器件电平的方法。 该方法包括使用各种方法生成冲突图并简化冲突图,以产生可以进一步简化或评估分解有效性的简化冲突图。 本公开还提供将分解有效性规则应用于简化的冲突图,以确定冲突图是否表示可分解成三个掩模的半导体器件层。 公开的方法由计算机执行,并且用于执行该方法的指令可以存储在计算机可读存储介质上。

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