公开(公告)号：US12068194B2

公开(公告)日：2024-08-20

申请号：US18364286

申请日：2023-08-02

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Pang Kuo ,  Ya-Lien Lee ,  Chieh-Yi Shen

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/7681 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53238

摘要： A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor. An inhibitor film comprising the inhibitor is formed on the conductive feature. The method further includes depositing a conductive barrier layer extending into the opening, performing a treatment to remove the inhibitor film after the conductive barrier layer is deposited, and depositing a conductive material to fill a remaining portion of the opening.

公开(公告)号：US20240363403A1

公开(公告)日：2024-10-31

申请号：US18766300

申请日：2024-07-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Pang Kuo ,  Ya-Lien Lee ,  Chieh-Yi Shen

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/7681 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53238

摘要： A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor. An inhibitor film comprising the inhibitor is formed on the conductive feature. The method further includes depositing a conductive barrier layer extending into the opening, performing a treatment to remove the inhibitor film after the conductive barrier layer is deposited, and depositing a conductive material to fill a remaining portion of the opening.

公开(公告)号：US20240006234A1

公开(公告)日：2024-01-04

申请号：US18364286

申请日：2023-08-02

申请人： Taiwan Semiconductor Manufacturing Co, Ltd.

发明人： Chia-Pang Kuo ,  Ya-Lien Lee ,  Chieh-Yi Shen

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/7681 ,  H01L23/53238 ,  H01L23/5226 ,  H01L21/76879

摘要： A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor. An inhibitor film comprising the inhibitor is formed on the conductive feature. The method further includes depositing a conductive barrier layer extending into the opening, performing a treatment to remove the inhibitor film after the conductive barrier layer is deposited, and depositing a conductive material to fill a remaining portion of the opening.

公开(公告)号：US11837500B2

公开(公告)日：2023-12-05

申请号：US17809919

申请日：2022-06-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Pang Kuo ,  Ya-Lien Lee ,  Chieh-Yi Shen

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/7681 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53238

摘要： A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor. An inhibitor film comprising the inhibitor is formed on the conductive feature. The method further includes depositing a conductive barrier layer extending into the opening, performing a treatment to remove the inhibitor film after the conductive barrier layer is deposited, and depositing a conductive material to fill a remaining portion of the opening.

公开(公告)号：US20220328347A1

公开(公告)日：2022-10-13

申请号：US17809919

申请日：2022-06-30

申请人： Taiwan Semiconductor Manufacturing Co.,Ltd.

发明人： Chia-Pang Kuo ,  Ya-Lien Lee ,  Chieh-Yi Shen

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

摘要： A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor. An inhibitor film comprising the inhibitor is formed on the conductive feature. The method further includes depositing a conductive barrier layer extending into the opening, performing a treatment to remove the inhibitor film after the conductive barrier layer is deposited, and depositing a conductive material to fill a remaining portion of the opening.