公开(公告)号：US20180097084A1

公开(公告)日：2018-04-05

申请号：US15281296

申请日：2016-09-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Sheng WANG ,  Chi-Cheng HUNG ,  Chia-Ching LEE ,  Chung-Chiang WU

IPC: H01L29/66 ,  H01L29/49 ,  H01L21/285

CPC classification number: H01L29/66545 ,  H01L21/28556 ,  H01L29/4966 ,  H01L29/785

Abstract: In a method of manufacturing a tungsten layer by an atomic layer deposition, a seed layer on an underlying layer is formed on a substrate by supplying a boron containing gas and a dilute gas, and a tungsten layer is formed on the seed layer by supplying a tungsten containing gas. A flow ratio of a flow amount of the boron containing gas to a total flow amount of the boron containing gas and the dilute gas is in a range from 1/21 to 1/4.

公开(公告)号：US20190067279A1

公开(公告)日：2019-02-28

申请号：US16173857

申请日：2018-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsueh Wen TSAU ,  Chia-Ching LEE ,  Chung-Chiang WU ,  Da-Yuan LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L21/02 ,  H01L21/321 ,  H01L21/28 ,  H01L29/78

CPC classification number: H01L21/28088 ,  H01L21/02244 ,  H01L21/28079 ,  H01L21/32115 ,  H01L21/823437 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method of forming a semiconductor device includes forming a plurality of fins on a substrate, forming a polysilicon gate structure, and replacing the polysilicon gate structure with a metal gate structure. Replacing the polysilicon gate structure includes depositing a work function metal layer over the plurality of fins, forming a metal oxide layer over the work function metal layer, and depositing a first metal layer over the metal oxide layer. A first portion of the metal oxide layer is formed within an area between adjacent fins from among the plurality of fins. An example benefit includes reduced diffusion of unwanted and/or detrimental elements from the first metal layer into its underlying layers and consequently, the reduction of the negative impact of these unwanted and/or detrimental elements on the semiconductor device performance.

公开(公告)号：US20180090431A1

公开(公告)日：2018-03-29

申请号：US15817281

申请日：2017-11-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Chiang WU ,  Chia-Ching LEE ,  Hsueh-Wen TSAU ,  Chun-Yuan CHOU ,  Cheng-Yen TSAI ,  Da-Yuan LEE ,  Ming-Hsing TSAI

IPC: H01L23/528 ,  H01L29/49 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76861 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/53261 ,  H01L29/4966

Abstract: A semiconductor structure includes a substrate, a dielectric layer, a metal layer, and a tungsten layer. The dielectric layer is on the substrate and has a recess feature therein. The metal layer is in the recess feature. The metal layer has an oxygen content less than about 0.1 atomic percent. The tungsten layer is in the recess feature and in contact with the metal layer.

公开(公告)号：US20170330829A1

公开(公告)日：2017-11-16

申请号：US15154989

申请日：2016-05-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Chiang WU ,  Chia-Ching LEE ,  Hsueh-Wen TSAU ,  Chun-Yuan CHOU ,  Cheng-Yen TSAI ,  Da-Yuan LEE ,  Ming-Hsing TSAI

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/311 ,  H01L21/768 ,  H01L29/49

CPC classification number: H01L23/528 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76861 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/53261 ,  H01L29/4966

Abstract: A semiconductor structure and the method of forming the same are provided. The method of forming a semiconductor structure includes forming a recess feature in a basal layer, forming a metal layer on the basal layer, exposing the metal layer to a tungsten halide gas to form an oxygen-deficient metal layer, and forming a bulk tungsten layer on the oxygen-deficient metal layer.

公开(公告)号：US20240038571A1

公开(公告)日：2024-02-01

申请号：US17876381

申请日：2022-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yo SU ,  Young-Wei LIN ,  Yu Liang HUANG ,  Chia-Ching LEE ,  Chi-Chun PENG ,  Chen Liang CHANG ,  Kuo Hui CHANG

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6838 ,  H01L21/68721 ,  H01L21/67288

Abstract: At least one embodiment, a vacuum chuck includes a moisture gate structure that allows for moisture to escape to reduce an amount of warpage in a workpiece when present on the vacuum chuck. The moisture gate structure includes a base portion that extends laterally outward from a central vacuum portion of the vacuum chuck, and a plurality of protrusions are spaced apart from the central vacuum portion and extend outward from the base portion. End surfaces of the plurality of protrusions contact a backside surface of the workpiece (e.g., a wafer on a carrier) when the workpiece is present on the vacuum chuck. The vacuum chuck may further include one or more guide portions that act as guides such that the workpiece remains properly aligned and within position when present on the vacuum chuck.