公开(公告)号：US20210134666A1

公开(公告)日：2021-05-06

申请号：US17121661

申请日：2020-12-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Yen HUANG ,  Kai-Fang CHENG ,  Chi-Lin TENG ,  Shao-Kuan LEE ,  Hai-Ching CHEN

IPC: H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a first metal wiring layer, an interlayer insulating layer formed over the first metal layer, a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer, and an etch-stop layer disposed between the first metal wiring and the first interlayer dielectric layer. The etch-stop layer includes one or more sub-layers. The etch-stop layer includes a first sub-layer made of an aluminum-based insulating material, hafnium oxide, zirconium oxide or titanium oxide.

公开(公告)号：US20170213791A1

公开(公告)日：2017-07-27

申请号：US15007779

申请日：2016-01-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Fang CHENG ,  Chi-Lin TENG ,  Hai-Ching CHEN ,  Hsin-Yen HUANG ,  Tien-I BAO ,  Jung-Hsun TSAI

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/7681 ,  H01L21/76831 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate. The first dielectric layer has a first opening exposing the first conductive structure. The semiconductor device structure includes a cover layer covering a first inner wall of the first opening. The cover layer has a second opening exposing the first conductive structure. The cover layer includes a metal oxide. The semiconductor device structure includes a second conductive structure filled in the first opening and surrounded by the cover layer. The second conductive structure is electrically connected to the first conductive structure.

公开(公告)号：US20170194242A1

公开(公告)日：2017-07-06

申请号：US15063358

申请日：2016-03-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Yen HUANG ,  Kai-Fang CHENG ,  Chi-Lin TENG ,  Shao-Kuan LEE ,  Hai-Ching CHEN

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76865 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295

Abstract: A semiconductor device includes a first metal wiring layer, an interlayer insulating layer formed over the first metal layer, a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer, and an etch-stop layer disposed between the first metal wiring and the first interlayer dielectric layer. The etch-stop layer includes one or more sub-layers. The etch-stop layer includes a first sub-layer made of an aluminum-based insulating material, hafnium oxide, zirconium oxide or titanium oxide.

公开(公告)号：US20180350669A1

公开(公告)日：2018-12-06

申请号：US16049187

申请日：2018-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Yen HUANG ,  Kai-Fang CHENG ,  Chi-Lin TENG ,  Shao-Kuan LEE ,  Hai-Ching CHEN

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76865 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295

Abstract: A semiconductor device includes a first metal wiring layer, an interlayer insulating layer formed over the first metal layer, a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer, and an etch-stop layer disposed between the first metal wiring and the first interlayer dielectric layer. The etch-stop layer includes one or more sub-layers. The etch-stop layer includes a first sub-layer made of an aluminum-based insulating material, hafnium oxide, zirconium oxide or titanium oxide.

公开(公告)号：US20180033730A1

公开(公告)日：2018-02-01

申请号：US15728762

申请日：2017-10-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Fang CHENG ,  Chi-Lin TENG ,  Hai-Ching CHEN ,  Hsin-Yen HUANG ,  Tien-I BAO ,  Jung-Hsun TSAI

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L21/7681 ,  H01L21/76831 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate and the first conductive structure. The semiconductor device structure includes a second conductive structure over the first conductive structure and extending into the first dielectric layer. The second conductive structure is electrically connected to the first conductive structure. The semiconductor device structure includes a cover layer between the second conductive structure and the first dielectric layer. The cover layer surrounds the second conductive structure, the second conductive structure passes through the cover layer and is partially between the cover layer and the first conductive structure, and the cover layer includes a metal oxide.