公开(公告)号：US08875630B2

公开(公告)日：2014-11-04

申请号：US12998789

申请日：2009-05-21

申请人： Masayuki Izume ,  Tadao Hashimoto ,  Kenjiro Yamasaki

发明人： Masayuki Izume ,  Tadao Hashimoto ,  Kenjiro Yamasaki

IPC分类号： B41F1/34 ,  B41F23/04 ,  B41F13/22 ,  B41F27/12

CPC分类号： B41F13/22 ,  B41F27/1206

摘要： The present invention provides a printer which can facilitate temperature control of a machine-plate cylinder section, can allow simple setup, and can facilitate maintenance of printing quality in continuous printing. In the printer, a machine plate is mounted on the outer circumference of a machine-plate cylinder section 12 fixedly provided on a machine-plate drive shaft 1. A fluid whose temperature is regulated is circulated in the machine-plate cylinder section 12.

摘要翻译： 本发明提供一种可以促进机板圆筒部分的温度控制的打印机，可以简单的设置，并且可以便于维持连续打印中的打印质量。 在打印机中，机板安装在固定设置在机板驱动轴1上的印版滚筒部分12的外圆周上。温度调节的流体在印版滚筒部分12中循环。

公开(公告)号：US20130206997A1

公开(公告)日：2013-08-15

申请号：US13138550

申请日：2010-10-21

申请人： Tadao Hashimoto ,  Hideyuki Norimatsu ,  Daisuke Inui

发明人： Tadao Hashimoto ,  Hideyuki Norimatsu ,  Daisuke Inui

IPC分类号： G01T1/167

CPC分类号： G01T1/167

摘要： A radiation monitor and a hand-foot-cloth monitor include a hand monitoring unit capable of accurately measuring surface contamination regardless of the size of the hand of the examinee. A hand monitoring unit (7A) includes a fixed detecting unit (73a) and a movable detecting unit (72a) arranged to face the fixed detecting unit (73a) and movable reciprocatingly in a direction facing the fixed detecting unit (73a), an urging unit (79a) urging the movable detecting unit (72a) in a direction separating from the fixed detecting unit (73a), a pressing member (74a) arranged between the fixed detecting unit (73a) and the movable detecting unit (72a) and pressable by the hand of the examinee, and an interlock mechanism (77a) moving the movable detecting unit (72a) against the urging force of the urging unit (79a) in a direction approaching the fixed detecting unit (73a) according to the amount of pressing of the pressing member (74a).

摘要翻译： 辐射监视器和手足布监视器包括能够准确地测量表面污染的手监测单元，而不管受检者的手的大小如何。 手动监控单元（7A）包括固定检测单元（73a）和可移动检测单元（72a），可移动检测单元（72a）布置成面向固定检测单元（73a）并且可沿与固定检测单元（73a）相对的方向往复运动， 单元（79a）沿与分离固定检测单元（73a）的方向推动可移动检测单元（72a）;按压构件（74a），布置在固定检测单元（73a）和可移动检测单元（72a）之间， 以及一个联动机构（77a），该联锁机构（77a）根据压力的数量，克服施力单元（79a）在接近固定检测单元（73a）的方向上抵抗推压单元（79a）的作用力移动可移动检测单元 的压紧构件（74a）。

公开(公告)号：US08236267B2

公开(公告)日：2012-08-07

申请号：US12455683

申请日：2009-06-04

申请人： Tadao Hashimoto ,  Edward Letts ,  Masanori Ikari

发明人： Tadao Hashimoto ,  Edward Letts ,  Masanori Ikari

IPC分类号： C01B21/06 ,  C30B23/00 ,  C23C16/00

CPC分类号： C30B7/105 ,  B32B15/01 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  C30B35/002 ,  Y10T428/12028

摘要： The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, and at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.This invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Also, back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

摘要翻译： 本发明公开了一种大尺寸的大型高压容器。 Ni-Cr基沉淀硬化型超合金。 船舶可能有多个区域。 例如，高压容器可以分为具有流量限制装置的至少三个区域，并且结晶区域设定为比其他区域更高的温度。 该结构有助于可靠地密封高压容器的两端，并且同时可有助于大大减少容器底部的III族氮化物的不利沉淀。 本发明还公开了提高纯度，透明度和结构质量的晶体生长的新方法。 含碱金属的矿化剂以最低的氧气和湿度暴露于高压容器中充满氨。 介绍了在工艺步骤中减少氧气污染的几种方法。 此外，公开了种晶的背面蚀刻和新的温度梯度方案以提高结构质量。

公开(公告)号：US20110239880A1

公开(公告)日：2011-10-06

申请号：US12998789

申请日：2009-05-21

申请人： Masayuki Izume ,  Tadao Hashimoto ,  Kenjiro Yamasaki

发明人： Masayuki Izume ,  Tadao Hashimoto ,  Kenjiro Yamasaki

IPC分类号： B41L47/02

CPC分类号： B41F13/22 ,  B41F27/1206

摘要： The present invention provides a printer which can facilitate temperature control of a machine-plate cylinder section, can allow simple setup, and can facilitate maintenance of printing quality in continuous printing. In the printer, a machine plate is mounted on the outer circumference of a machine-plate cylinder section 12 fixedly provided on a machine-plate drive shaft 1. A fluid whose temperature is regulated is circulated in the machine-plate cylinder section 12.

摘要翻译： 本发明提供一种可以促进机板圆筒部分的温度控制的打印机，可以简单的设置，并且可以便于维持连续打印中的打印质量。 在打印机中，机板安装在固定设置在机板驱动轴1上的印版滚筒部分12的外圆周上。温度调节的流体在印版滚筒部分12中循环。

公开(公告)号：US20100303704A1

公开(公告)日：2010-12-02

申请号：US12850383

申请日：2010-08-04

申请人： Tadao Hashimoto

发明人： Tadao Hashimoto

IPC分类号： C01B21/06 ,  C30B23/00

CPC分类号： C30B29/403 ,  C30B7/105

摘要： A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH3 at this temperature is significant. However, the dissociation of NH3 is avoided by adding extra N2 pressure after filling the reaction vessel with NH3.

摘要翻译： 在超临界氨和氮的混合物中生长III族氮化物晶体的方法和通过该方法生长的III族晶体的方法。 III族氮化物晶体使用多晶III族氮化物，非晶III族氮化物，III族金属或其混合物的源材料或营养物质在超临界氨的反应容器中生长， 即III族氮化物单晶。 为了生长高质量III族氮化物晶体，结晶温度设定在550℃以上。 理论计算表明，NH3在此温度下的解离是显着的。 然而，通过在用NH 3填充反应容器后加入额外的N 2压力来避免NH 3的离解。

公开(公告)号：US6069394A

公开(公告)日：2000-05-30

申请号：US56500

申请日：1998-04-08

申请人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

发明人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

IPC分类号： C30B25/18 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L31/00 ,  H01L29/06 ,  H01L31/06 ,  H01L31/12

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B25/18 ,  H01S2301/173 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333

摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In.sub.0.2 Ga.sub.0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

公开(公告)号：US5323446A

公开(公告)日：1994-06-21

申请号：US870083

申请日：1992-04-17

申请人： Susumu Kojima ,  Noriaki Nagashima ,  Tadao Hashimoto

发明人： Susumu Kojima ,  Noriaki Nagashima ,  Tadao Hashimoto

IPC分类号： H04J3/00 ,  H04L5/22 ,  H04W36/08 ,  H04W36/18 ,  H04M911/00 ,  H04B1/00 ,  H04Q7/00

CPC分类号： H04W36/30 ,  H04W36/18

摘要： In a cellular communications system, the quality of a signal transmitted over a first two-way connection from a mobile station via a first base station is compared with a threshold to determine whether a handoff is to be performed to a second, adjacent base station. When the quality of the transmitted signal becomes lower than the threshold, a second two-way connection is established from the mobile station to the second base station, and a switching request signal and an information-bearing signal are sent from the mobile station over both connections to a switching exchange. In response to the request signal, one directional path of the first connection is cleared to prevent a version of the signal passing through the first connection from reaching the destination station, and a first switching complete signal is sent through the other path of the first connection to the mobile station to allow it to clear the first connection and return a second switching complete signal. The other path of the first connection is then cleared in response to the second switching complete signal, leaving the second connection between the mobile station and the second base station.

摘要翻译： 在蜂窝通信系统中，将通过第一基站从移动台通过第一双向连接发送的信号的质量与阈值进行比较，以确定是否要向第二相邻基站执行越区切换。 当发送信号的质量变得低于阈值时，从移动台向第二基站建立第二双向连接，并且从移动台通过两者发送切换请求信号和信息承载信号 连接到交换机交换机。 响应于请求信号，清除第一连接的一个方向路径以防止通过第一连接的信号的版本到达目的站，并且通过第一连接的另一路径发送第一切换完成信号 到移动台以允许其清除第一连接并返回第二切换完成信号。 然后响应于第二切换完成信号清除第一连接的另一路径，留下移动站和第二基站之间的第二连接。

公开(公告)号：US08971018B2

公开(公告)日：2015-03-03

申请号：US13524439

申请日：2012-06-15

申请人： Tadao Hashimoto

发明人： Tadao Hashimoto

IPC分类号： H01G9/155 ,  H01G11/30 ,  C01B21/06 ,  H01G9/042 ,  H01G9/04 ,  H01G11/50

CPC分类号： H01G11/30 ,  B82Y30/00 ,  C01B21/0615 ,  C01B21/0617 ,  C01P2004/64 ,  C01P2006/12 ,  H01G9/042 ,  H01G9/058 ,  H01G11/12 ,  H01G11/50 ,  H01G11/86 ,  Y02E60/13 ,  Y02P20/544 ,  Y02T10/7022 ,  Y10T29/417 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993

摘要： The present invention discloses a new construction of ultracapacitor utilizing particles of transition metal nitride having negligible amount of halide impurities. The construction is expected to attain high specific energy density by using transition metal nitride particles and higher reliability by avoiding potential corrosion of metal components with halide impurities. The transition metal nitride particles are preferably synthesized by basic ammonothermal process, which utilizes supercritical ammonia with alkali metal mineralizers. Transition metal nitride such as vanadium nitride, molybdenum nitride, titanium nitride, nickel nitride, neodymium nitride, iron nitride, etc. can be synthesized in supercritical ammonia with reducing mineralizers such as potassium, sodium, lithium, magnesium, calcium, and aluminum. Since supercritical ammonia has characteristics of both gas and liquid, it can over complicated fine structure or fine particles. The new method is suitable for forming a protective coating on complicated structure or forming micro- to nano-sized particles.

摘要翻译： 本发明公开了利用可忽略量的卤化物杂质的过渡金属氮化物颗粒的超级电容器的新结构。 预期通过使用过渡金属氮化物颗粒获得高比能量密度并且通过避免具有卤化物杂质的金属组分的潜在腐蚀，具有更高的可靠性。 过渡金属氮化物颗粒优选通过碱性氨热法合成，其利用超临界氨与碱金属矿化剂。 过渡金属氮化物如氮化钒，氮化钼，氮化钛，氮化镍，氮化钕，氮化铁等可以在超临界氨中与还原矿化剂例如钾，钠，镁，钙和铝合成。 由于超临界氨具有气液两极的特性，因此可能会导致复杂的微细结构或微细颗粒。 该新方法适用于在复杂结构上形成保护涂层或形成微米至纳米尺寸的颗粒。

公开(公告)号：US08852341B2

公开(公告)日：2014-10-07

申请号：US12624006

申请日：2009-11-23

申请人： Edward Letts ,  Tadao Hashimoto ,  Masanori Ikari

发明人： Edward Letts ,  Tadao Hashimoto ,  Masanori Ikari

IPC分类号： C30B25/02 ,  C30B25/00 ,  C30B29/40 ,  C01B21/06 ,  C30B7/10

CPC分类号： C30B29/403 ,  C01B21/0632 ,  C30B7/10 ,  C30B25/00 ,  C30B25/005 ,  C30B29/406

摘要： The present invention discloses methods to produce large quantities of polycrystalline GaN for use in the ammonothermal growth of group III-nitride material. High production rates of GaN can be produced in a hydride vapor phase growth system. One drawback to enhanced polycrystalline growth is the increased incorporation of impurities, such as oxygen. A new reactor design using non-oxide material that reduces impurity concentrations is disclosed. Purification of remaining source material after an ammonothermal growth is also disclosed. The methods described produce sufficient quantities of polycrystalline GaN source material for the ammonothermal growth of group III-nitride material.

摘要翻译： 本发明公开了生产用于III族氮化物材料的氨热生长的大量多晶GaN的方法。 可以在氢化物气相生长系统中生产高产率的GaN。 增加多晶生长的一个缺点是增加杂质如氧气的掺入。 公开了使用减少杂质浓度的非氧化物材料的新型反应器设计。 还公开了在氨热生长之后的剩余源材料的纯化。 所描述的方法产生足够量的用于III族氮化物材料的氨热生长的多晶GaN源材料。

公开(公告)号：US08709371B2

公开(公告)日：2014-04-29

申请号：US11921396

申请日：2005-07-08

申请人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

发明人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

IPC分类号： C01B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

摘要： A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

摘要翻译： 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。