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    Method for making topological insulator structure
    5.
    发明授权
    Method for making topological insulator structure 有权
    拓扑绝缘体结构的制作方法

    公开(公告)号：US09394624B2

    公开(公告)日：2016-07-19

    申请号：US14055853

    申请日：2013-10-16

    Applicant: Tsinghua University ,  Institute of Physics, Chinese Academy of Sciences

    Inventor： Qi-Kun Xue ,  Ke He ,  Xu-Cun Ma ,  Xi Chen ,  Li-Li Wang ,  Cui-Zu Chang ,  Xiao Feng ,  Yao-Yi Li ,  Jin-Feng Jia

    IPC: C30B23/02 ,  C30B25/18 ,  H01L43/14 ,  C30B23/00

    CPC classification number: C30B25/186 ,  C30B23/002 ,  C30B23/025 ,  H01L43/14

    Abstract: A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.

    Abstract translation: 提供一种用于形成拓扑绝缘体结构的方法。 使用具有表面（111）的钛酸锶基材。 钛酸锶基体的表面（111）通过对分子束外延室中的钛酸锶基材进行热处理来清洗。 加热钛酸锶基片，并通过控制Bi光束，Sb光束，Cr光束和Te光束的流速以控制的比例在分子束外延室中形成Bi光束，Sb光束，Cr光束和Te光束。 。 磁性掺杂拓扑绝缘体量子阱膜形成在钛酸锶基体的表面（111）上。 通过掺杂Cr引入的空穴型电荷载流子的量基本上等于通过掺杂Bi引入的电子型电荷载流子的量。

    Method for generating quantized anomalous hall effect
    6.
    发明授权
    Method for generating quantized anomalous hall effect 有权
    量化异常霍尔效应的方法

    公开(公告)号：US09349946B2

    公开(公告)日：2016-05-24

    申请号：US14055846

    申请日：2013-10-16

    Applicant: Tsinghua University ,  Institute of Physics, Chinese Academy of Sciences

    Inventor： Qi-Kun Xue ,  Ke He ,  Xu-Cun Ma ,  Xi Chen ,  Li-Li Wang ,  Ya-Yu Wang ,  Li Lv ,  Cui-Zu Chang ,  Xiao Feng

    IPC: H01L21/00 ,  H01L43/14 ,  H01L43/06

    CPC classification number: H01L43/14 ,  H01L43/065

    Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm−2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

    Abstract translation: 提供了一种产生量子异常霍尔效应的方法。 在绝缘基板上形成3QL至5QL中的拓扑绝缘体量子阱膜。 拓扑绝缘体量子阱膜掺杂有第一元素和第二元素以形成磁掺杂拓扑绝缘子量子阱膜。 第一元件和第二元件的掺杂在磁性掺杂拓扑绝缘子量子阱膜中分别引入孔型电荷载流子和电子型电荷载流子，以将磁性掺杂拓扑绝缘体量子阱膜的载流子密度降低到或小于 等于1×1013 cm-2。 第一元素和第二元素之一磁性掺杂拓扑绝缘体量子阱膜。 将电场施加到磁性掺杂拓扑绝缘体量子阱膜以降低载流子密度。

    In-situ testing device
    7.
    发明授权
    In-situ testing device 有权

    公开(公告)号：US11385256B2

    公开(公告)日：2022-07-12

    申请号：US17121589

    申请日：2020-12-14

    Applicant: TSINGHUA UNIVERSITY

    Inventor： Qi-Kun Xue ,  Xiao-Peng Hu ,  Cheng Zheng ,  Xi Chen

    IPC: G01R1/073 ,  G01N3/02 ,  G01N3/06 ,  G01N3/08 ,  G01N3/20 ,  G01N3/22 ,  G01R1/04 ,  G01R1/067

    Abstract: The present disclosure relates to an in-situ testing device including a measuring head, a drive mechanism, and a testing chamber. The testing chamber is provided with a first optical observation hole. The measuring head is provided with a second optical observation hole. The testing chamber is provided with an opening allowing the measuring head to pass. The testing chamber is further provided with a shielding door, and the drive mechanism is connected to the shielding door to drive the shielding door to move relative to the testing chamber, to open or cover the opening, thereby opening or closing the testing chamber.

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