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公开(公告)号：US20240347667A1
公开(公告)日：2024-10-17
申请号：US18369946
申请日：2023-09-19
发明人： Chengfa LIU , Shuai ZHANG , Hong CHEN , Yugang LU , Wanli LI , Yang ZOU
IPC分类号： H01L31/18 , H01L31/0216
CPC分类号： H01L31/18 , H01L31/02167
摘要： The present application provides a film preparation method, a solar cell, a photovoltaic device, and a photovoltaic system. The film preparation method includes forming a first passivation layer on a first surface of a substrate by using a first preparation technique; and forming a second passivation layer on a surface of the first passivation layer away from the substrate by using a second preparation technique, a material of the second passivation layer is the same as that of the first passivation layer; wherein a passivation layer forming speed of the first preparation technique is lower than that of the second preparation technique, and a passivation effect of the first passivation layer is better than that of the second passivation layer.
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公开(公告)号：US20240063324A1
公开(公告)日：2024-02-22
申请号：US18386544
申请日：2023-11-02
发明人： Chengfa LIU , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/18 , H01L31/0236
CPC分类号： H01L31/1868 , H01L31/1804 , H01L31/02363 , H01L31/02167
摘要： The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting material layer is provided. A first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting material layer covers the textured structure. A passivating contact material layer is formed on each surface of the wafer. The wafer formed with the passivating contact material layer is cut along the thickness direction of the substrate to form a sub-wafer, so as to form a doped conducting layer. The passivating contact material layer is etched to form a passivating contact layer. A first passivation layer is formed on the doped conducting layer, and further covers at least a portion of a cut edge side surface which is a side surface of the sub-wafer formed by cutting the wafer.
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3.发明公开公开(公告)号：US20240063313A1
公开(公告)日：2024-02-22
申请号：US18386531
申请日：2023-11-02
发明人： Chengfa LIU , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/0216
CPC分类号： H01L31/02167
摘要： The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.
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4.发明公开公开(公告)号：US20240055540A1
公开(公告)日：2024-02-15
申请号：US18383154
申请日：2023-10-24
发明人： Hong CHEN , Yifeng CHEN , Di LIU , Wenxing DU
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0216 , H01L31/0236
CPC分类号： H01L31/022425 , H01L31/1868 , H01L31/02164 , H01L31/02366
摘要： The application provides a solar cell, a manufacturing method, a photovoltaic device and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, an anti-reflection layer, a passivation contact layer, and a second passivation layer. The substrate includes opposite first and second surfaces, and side surfaces between the first and second surfaces. The doped conducting layer and the first passivation layer are sequentially stacked on the first surface. The anti-reflection layer is stacked on the first passivation layer and covers the first surface to cover the first passivation layer. The passivation contact layer is stacked on the second surface. The second passivation layer is stacked on the passivation contact layer and covers the second surface to cover the passivation contact layer. The anti-reflection layer or the second passivation layer covers at least part of at least one side surface of the substrate.
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公开(公告)号：US20240355942A1
公开(公告)日：2024-10-24
申请号：US18685271
申请日：2022-09-23
发明人： Hong CHEN , Jifan GAO , Yifeng CHEN
IPC分类号： H01L31/0236 , C30B33/10 , H01L31/068 , H01L31/18
CPC分类号： H01L31/02363 , C30B33/10 , H01L31/02366 , H01L31/068 , H01L31/1892
摘要： The present disclosure provides a texture structure of a solar cell and a preparation method therefor. The texture structure includes a texture with a surface including a contact region and a non-contact region. The contact region is provided with a metal gate line, and has a specific surface area smaller than the non-contact region. According to the texture structure of a solar cell and the preparation method therefor provided by the present disclosure, the texture of a metal gate line coverage region and the texture of a metal gate line non-coverage region form different microscopic appearances of texture structure, and the texture structure in the non-coverage region has a specific surface area much larger than the texture structure in the coverage region, thereby reducing a contact area between a slurry metal and a PN junction on the texture, reducing the metal recombination by more than 20%, and improving the conversion efficiency.
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公开(公告)号：US20240347655A1
公开(公告)日：2024-10-17
申请号：US18754963
申请日：2024-06-26
发明人： Chengfa LIU , Xiaopeng WU , Yaqian ZHANG , Yang ZOU , Yugang LU , Shuai ZHANG , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/0288 , H01L31/0216
CPC分类号： H01L31/0288 , H01L31/02168
摘要： A method for preparing a solar cell is provided. The method includes providing a N-type silicon substrate; depositing a tunnel passivation structure on the first surface of the N-type silicon substrate, and then depositing a mask layer on the tunnel passivation structure; cleaning the second surface of the N-type silicon substrate; performing boron diffusion treatment on the cleaned second surface of the N-type silicon substrate and annealing treatment on the tunnel passivation structure in the same environment, so that a first emitter layer is formed on the second surface of the N-type silicon substrate and the tunnel passivation structure is crystallized; performing laser patterning treatment on the first emitter layer to form a second emitter region; depositing a passivation and anti-reflection film; and forming a first electrode and a second electrode.
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公开(公告)号：US20240072195A1
公开(公告)日：2024-02-29
申请号：US18386535
申请日：2023-11-02
申请人： TRINA SOLAR CO., LTD
发明人： Chengfa LIU , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0236
CPC分类号： H01L31/1868 , H01L31/02167 , H01L31/022425 , H01L31/02363 , H01L31/186
摘要： The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting layer is provided. A doped conducting layer is disposed at least on the first surface and the portion of the first side surface, thereby covering the textured structure. A passivating contact layer is formed on the second surface of the substrate. A first passivation layer is formed on the doped conducting layer. The first passivation layer covers the first surface and at least the portion of the first side surface, thereby covering at least the doped conducting layer. A second passivation layer is formed on the passivating contact layer. The second passivation layer covers the second surface, thereby covering the passivating contact layer.
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公开(公告)号：US20240266451A1
公开(公告)日：2024-08-08
申请号：US18387556
申请日：2023-11-07
发明人： Chengfa LIU , Xiaopeng WU , Yaqian ZHANG , Yang ZOU , Yugang LU , Shuai ZHANG , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/0288 , H01L31/0216
CPC分类号： H01L31/0288 , H01L31/02168
摘要： A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.
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9.发明公开公开(公告)号：US20240055539A1
公开(公告)日：2024-02-15
申请号：US18383097
申请日：2023-10-24
申请人： TRINA SOLAR CO., LTD
发明人： Chengfa LIU , Hong CHEN , Yaqian ZHANG , Xiaopeng WU , Yugang LU , Shuai ZHANG
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425
摘要： The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.
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