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公开(公告)号：US20240347655A1
公开(公告)日：2024-10-17
申请号：US18754963
申请日：2024-06-26
发明人： Chengfa LIU , Xiaopeng WU , Yaqian ZHANG , Yang ZOU , Yugang LU , Shuai ZHANG , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/0288 , H01L31/0216
CPC分类号： H01L31/0288 , H01L31/02168
摘要： A method for preparing a solar cell is provided. The method includes providing a N-type silicon substrate; depositing a tunnel passivation structure on the first surface of the N-type silicon substrate, and then depositing a mask layer on the tunnel passivation structure; cleaning the second surface of the N-type silicon substrate; performing boron diffusion treatment on the cleaned second surface of the N-type silicon substrate and annealing treatment on the tunnel passivation structure in the same environment, so that a first emitter layer is formed on the second surface of the N-type silicon substrate and the tunnel passivation structure is crystallized; performing laser patterning treatment on the first emitter layer to form a second emitter region; depositing a passivation and anti-reflection film; and forming a first electrode and a second electrode.
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公开(公告)号：US20240266451A1
公开(公告)日：2024-08-08
申请号：US18387556
申请日：2023-11-07
发明人： Chengfa LIU , Xiaopeng WU , Yaqian ZHANG , Yang ZOU , Yugang LU , Shuai ZHANG , Hong CHEN , Daming CHEN , Yifeng CHEN
IPC分类号： H01L31/0288 , H01L31/0216
CPC分类号： H01L31/0288 , H01L31/02168
摘要： A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.
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3.发明公开公开(公告)号：US20240055539A1
公开(公告)日：2024-02-15
申请号：US18383097
申请日：2023-10-24
申请人： TRINA SOLAR CO., LTD
发明人： Chengfa LIU , Hong CHEN , Yaqian ZHANG , Xiaopeng WU , Yugang LU , Shuai ZHANG
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425
摘要： The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.
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