公开(公告)号：US20240347667A1

公开(公告)日：2024-10-17

申请号：US18369946

申请日：2023-09-19

申请人： TRINA SOLAR CO., LTD.

发明人： Chengfa LIU ,  Shuai ZHANG ,  Hong CHEN ,  Yugang LU ,  Wanli LI ,  Yang ZOU

IPC分类号： H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/18 ,  H01L31/02167

摘要： The present application provides a film preparation method, a solar cell, a photovoltaic device, and a photovoltaic system. The film preparation method includes forming a first passivation layer on a first surface of a substrate by using a first preparation technique; and forming a second passivation layer on a surface of the first passivation layer away from the substrate by using a second preparation technique, a material of the second passivation layer is the same as that of the first passivation layer; wherein a passivation layer forming speed of the first preparation technique is lower than that of the second preparation technique, and a passivation effect of the first passivation layer is better than that of the second passivation layer.

公开(公告)号：US20240266451A1

公开(公告)日：2024-08-08

申请号：US18387556

申请日：2023-11-07

申请人： TRINA SOLAR CO., LTD. ,  TRINA SOLAR (SUQIAN) PHOTOELECTRIC CO., LTD.

发明人： Chengfa LIU ,  Xiaopeng WU ,  Yaqian ZHANG ,  Yang ZOU ,  Yugang LU ,  Shuai ZHANG ,  Hong CHEN ,  Daming CHEN ,  Yifeng CHEN

IPC分类号： H01L31/0288 ,  H01L31/0216

CPC分类号： H01L31/0288 ,  H01L31/02168

摘要： A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.

公开(公告)号：US20240055539A1

公开(公告)日：2024-02-15

申请号：US18383097

申请日：2023-10-24

申请人： TRINA SOLAR CO., LTD

发明人： Chengfa LIU ,  Hong CHEN ,  Yaqian ZHANG ,  Xiaopeng WU ,  Yugang LU ,  Shuai ZHANG

IPC分类号： H01L31/0224

CPC分类号： H01L31/022425

摘要： The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.

公开(公告)号：US20240347655A1

公开(公告)日：2024-10-17

申请号：US18754963

申请日：2024-06-26

申请人： TRINA SOLAR CO., LTD. ,  TRINA SOLAR (SUQIAN) PHOTOELECTRIC CO., LTD.

发明人： Chengfa LIU ,  Xiaopeng WU ,  Yaqian ZHANG ,  Yang ZOU ,  Yugang LU ,  Shuai ZHANG ,  Hong CHEN ,  Daming CHEN ,  Yifeng CHEN

IPC分类号： H01L31/0288 ,  H01L31/0216

CPC分类号： H01L31/0288 ,  H01L31/02168

摘要： A method for preparing a solar cell is provided. The method includes providing a N-type silicon substrate; depositing a tunnel passivation structure on the first surface of the N-type silicon substrate, and then depositing a mask layer on the tunnel passivation structure; cleaning the second surface of the N-type silicon substrate; performing boron diffusion treatment on the cleaned second surface of the N-type silicon substrate and annealing treatment on the tunnel passivation structure in the same environment, so that a first emitter layer is formed on the second surface of the N-type silicon substrate and the tunnel passivation structure is crystallized; performing laser patterning treatment on the first emitter layer to form a second emitter region; depositing a passivation and anti-reflection film; and forming a first electrode and a second electrode.