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公开(公告)号：US11320381B2
公开(公告)日：2022-05-03
申请号：US17030520
申请日：2020-09-24
发明人： Chyuan-Ruey Lin , Feng-Min Shen , Hung-Chia Su
摘要： A deterioration detecting system for semiconductor process kits has a Raman spectrometer, an optical detecting unit, a Raman spectra database unit, and a controlling-computing unit. The optical detecting unit and the controlling-computing unit are both coupled to the Raman spectrometer. The Raman spectrometer detects a semiconductor process kit under detection through the optical detecting unit to obtain a scatter light having an excited Raman spectrum signal. The Raman spectra database unit stores a plurality of Raman spectrum signals corresponding to multiple known use hours, multiple known materials, multiple known material compounds, or multiple known material deterioration state, of the semiconductor process kit under detection. The controlling-computing unit compares the excited Raman spectrum signal and a threshold of the Raman spectrum signals accessed from the Raman spectra database unit and outputs a judgment signal relating to the deterioration state of the semiconductor process kit under detection.
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2.发明授权公开(公告)号：US12055498B2
公开(公告)日：2024-08-06
申请号：US17361026
申请日：2021-06-28
发明人： Chyuan-Ruey Lin , Feng-Min Shen , Hung-Chia Su
IPC分类号： G01N21/95 , G01N21/01 , G01N21/65 , G01N21/88 , G01N21/94 , G01N21/956 , G05B19/418 , G05B23/02 , H01L21/66
CPC分类号： G01N21/9501 , G01N21/658 , G01N21/8851 , G01N21/95607 , G01N21/01 , G01N21/65 , G01N21/8806 , G01N2021/8854 , G01N2021/8877 , G01N21/94 , G01N21/95 , G01N21/956 , G01N2021/95615 , G01N2201/126 , G05B19/41875 , G05B23/0283 , G05B2219/37507 , G05B2219/45031 , H01L22/30
摘要： A data processing method for detection of deterioration of semiconductor process kits includes the following steps: acquiring a plurality of Raman spectra data of a semiconductor process kit and performing a plurality calculating processes on the Raman spectra data to obtain a first deterioration state determining parameter indicating the aging degree of the entire semiconductor process kit and a second deterioration state determining parameter indicating the degree of variation of the internal molecular structure of the semiconductor process kit.
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