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公开(公告)号：US11605536B2
公开(公告)日：2023-03-14
申请号：US17026168
申请日：2020-09-19
发明人： Jianping Zhao , Peter Ventzek , Toshihiko Iwao
摘要： A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: treating an unreactive surface of a substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux, and nitridating the reactive surface using a nitrogen-based gas to convert the reactive surface to a nitride layer including a subsequent unreactive surface.
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公开(公告)号：US20210404055A1
公开(公告)日：2021-12-30
申请号：US17327437
申请日：2021-05-21
IPC分类号： C23C16/26 , C23C16/505 , C23C16/52 , C23C16/46
摘要： A method of forming a carbon hard mask includes generating a radio frequency plasma including carbon-based ions by supplying continuous wave radio frequency power to a plasma processing chamber. The carbon-based ions have a first average ion energy. The method further includes adjusting the first average ion energy of the carbon-based ions to a second average ion energy by supplying continuous wave direct current power to the plasma processing chamber concurrently with the continuous wave radio frequency power and forming a carbon hard mask at a substrate within the plasma processing chamber by delivering the carbon-based ions having the second average ion energy to the substrate.
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公开(公告)号：US11139147B1
公开(公告)日：2021-10-05
申请号：US16883087
申请日：2020-05-26
发明人： Toshihiko Iwao , Takaaki Kato
IPC分类号： H01J37/32
摘要： A plasma processing apparatus is provided, in which an electromagnetic wave in a VHF band of 100 MHz or higher is supplied to a chamber to form a plasma. The plasma processing apparatus includes a ceiling wall that defines a part of the chamber, and a central conductor for supplying the electromagnetic wave that is disposed in a hole formed in the center of the ceiling wall. A central position of the central conductor substantially coincides with a central position of a stage on which a workpiece is placed, and an outer diameter of the central conductor and a size of the hole of the ceiling wall are defined such that a cutoff frequency of a coaxial path composed of the central conductor and the ceiling wall is greater than a frequency of the electromagnetic wave.
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公开(公告)号：US09875882B2
公开(公告)日：2018-01-23
申请号：US14326647
申请日：2014-07-09
发明人： Toshihiko Iwao , Kazushi Kaneko
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32522 , H01J37/3222
摘要： Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the intermediate metal plate. The coaxial waveguide includes an inner conductor, an intermediate conductor and an outer conductor. Each of a space between the inner conductor installed in a hollow portion of the intermediate conductor and the intermediate conductor and a space between the intermediate conductor installed in a hollow portion of the outer conductor and the outer conductor transmits microwaves. A difference between an inner diameter of the outer conductor and an outer diameter of the intermediate conductor is larger than a difference between an outer diameter of the inner conductor and an inner diameter of the intermediate conductor.
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公开(公告)号：US20230143204A1
公开(公告)日：2023-05-11
申请号：US17521359
申请日：2021-11-08
发明人： Toshihiko Iwao , Jianping Zhao
CPC分类号： H01J37/32449 , H01J37/3299 , H01J37/32146 , H01L22/26 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01J2237/3321
摘要： A method of plasma processing that includes: flowing a first gas and a second gas into a plasma processing chamber including a substrate, the second gas including a film precursor; at a first time instance, while maintaining the flow of the first gas, shutting off the flow of the second gas into the plasma processing chamber; and at a second time instance after the first time instance, powering an electrode of the plasma processing chamber to generate a plasma within the plasma processing chamber, the surface of the substrate being exposed to the generated plasma to form a film over the substrate.
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公开(公告)号：US10513777B2
公开(公告)日：2019-12-24
申请号：US14378365
申请日：2013-02-12
IPC分类号： C23C16/50 , C23C16/455 , H01J37/32 , H01L21/02
摘要： A processing chamber accommodating a mounting table includes a first region and a second region. As the mounting table rotates, a substrate mounting region of the mounting table moves in a circumferential direction around the axis to pass through the first region and the second region. A first gas supply unit supplies a precursor gas to the first region from an injection unit disposed to face the mounting table. An exhaust outlet exhausts an exhaust port formed to extend along a closed path surrounding the exhaust outlet. A second gas supply unit supplies purge gas from an injection port formed to extend along a closed path surrounding the exhaust port. A plasma generation unit generates plasma from a reaction gas in the second region. An angular range of the second region is larger than an angular range of the first region.
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公开(公告)号：US20150194290A1
公开(公告)日：2015-07-09
申请号：US14416441
申请日：2013-04-12
发明人： Toshihisa Nozawa , Toshihiko Iwao
IPC分类号： H01J37/32 , C23C16/511
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32229 , H01J37/32522 , H01J37/32715 , H01J2237/332 , H01J2237/334 , H05H1/46 , H05H2001/463
摘要： A plasma processing apparatus according to an exemplary embodiment includes a processing container that defines a processing space; an antenna provided above the processing space and including a disc-shaped wave guiding path around a predetermined axis and a metal plate defining the wave guiding path from a lower side; a microwave generator connected to the antenna and configured to generate microwaves; a stage provided in the processing container and facing the antenna across the processing space to intersect with the predetermined axis; and a heater configured to heat the metal plate. The metal plate includes a plurality of openings along a first circle around the predetermined axis and a second circle having a diameter larger than the first circle. The antenna includes a plurality of protrusions made of a dielectric material extending out into the processing space through the plurality of openings. The microwaves are introduced around the predetermined axis.
摘要翻译： 根据示例性实施例的等离子体处理装置包括限定处理空间的处理容器; 设置在处理空间上方的天线，并且包括围绕预定轴线的盘形波导路径和从下侧限定波导路径的金属板; 连接到天线并被配置为产生微波的微波发生器; 设置在处理容器中并且跨过处理空间面对天线的台阶与预定轴线相交; 以及被配置为加热金属板的加热器。 金属板包括围绕预定轴线的第一圆周的多个开口和具有大于第一圆的直径的第二圆。 该天线包括多个由介电材料构成的突起，该电介质通过多个开口延伸到处理空间中。 围绕预定轴线引入微波。
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公开(公告)号：US20140262041A1
公开(公告)日：2014-09-18
申请号：US14204840
申请日：2014-03-11
发明人： Merritt Funk , Jianping Zhao , Lee Chen , Toshihiko Iwao , Toshihisa Nozawa , Zhiying Chen , Peter Ventzek
IPC分类号： H01J37/32
CPC分类号： H01J37/32229 , H01J37/32211 , H01J37/32238 , H01L21/67017 , H01L21/67069
摘要： A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.
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公开(公告)号：US20230154745A1
公开(公告)日：2023-05-18
申请号：US18155507
申请日：2023-01-17
CPC分类号： H01L21/02247 , H01L21/0234 , C23C16/345 , H01L21/0217
摘要： A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: directing an energy flux to a localized region of an unreactive surface of a substrate to convert the localized region of the unreactive surface to a localized reactive region: and selectively nitridating the localized reactive region using a nitrogen-based gas to convert the localized reactive region to a nitride layer.
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公开(公告)号：US09831067B2
公开(公告)日：2017-11-28
申请号：US14434738
申请日：2013-09-30
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/511 , H01L21/02 , H05H1/46 , C23C16/34 , C23C16/455 , C23C16/458
CPC分类号： H01J37/32238 , C23C16/345 , C23C16/45536 , C23C16/45544 , C23C16/45551 , C23C16/4584 , C23C16/511 , H01J37/32192 , H01J37/3222 , H01J37/32229 , H01J37/32357 , H01J37/32715 , H01J37/32733 , H01J2237/332 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H05H1/46 , H05H2001/4622
摘要： In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.
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