- 专利标题: Cyclic low temperature film growth processes
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申请号: US17026168申请日: 2020-09-19
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公开(公告)号: US11605536B2公开(公告)日: 2023-03-14
- 发明人: Jianping Zhao , Peter Ventzek , Toshihiko Iwao
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C23C16/34
摘要:
A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: treating an unreactive surface of a substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux, and nitridating the reactive surface using a nitrogen-based gas to convert the reactive surface to a nitride layer including a subsequent unreactive surface.
公开/授权文献
- US20220093395A1 CYCLIC LOW TEMPERATURE FILM GROWTH PROCESSES 公开/授权日:2022-03-24
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