公开(公告)号：US12132465B2

公开(公告)日：2024-10-29

申请号：US17537776

申请日：2021-11-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeronimo Segovia-Fernandez ,  Bichoy Bahr ,  Ting-Ta Yen ,  Michael Henderson Perrott ,  Zachary Schaffer

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

CPC classification number: H03H9/175 ,  H03H9/02015 ,  H03H9/131

Abstract: A tunable bulk acoustic wave (BAW) resonator includes: a first electrode adapted to be coupled to an oscillator circuit; a second electrode adapted to be coupled to the oscillator circuit; and a piezoelectric layer between the first electrode and the second electrode; and a Bragg mirror. The Bragg mirror has: a metal layer; and a dielectric layer between the metal layer and either of the first electrode or the second electrode. The tunable BAW resonator also includes: a radio-frequency (RF) signal source having a first end and a second end, the first end coupled to the first electrode, and the second end coupled to the second electrode; and an amplifier circuit between either the first electrode or the second electrode and the Bragg mirror metal layer.

公开(公告)号：US12212298B2

公开(公告)日：2025-01-28

申请号：US17877206

申请日：2022-07-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hakhamanesh Mansoorzare ,  Ting-Ta Yen ,  Jeronimo Segovia-Fernandez ,  Bichoy Bahr

IPC: H03H3/007 ,  H03H9/02 ,  H03H9/10

Abstract: A micro-mechanical resonator die includes: micro-mechanical resonator die layers; a cavity formed in at least one of the micro-mechanical resonator die layers; and a micro-mechanical resonator suspended in the cavity. The micro-mechanical resonator includes: a base; a first resonator portion extending from the base along a first plane; and a second resonator portion extending from the base along a second plane. The first resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the first resonator portion out of the first plane. The second resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the second resonator portion out of the second plane and out-of-phase relative to the first resonator portion.

公开(公告)号：US12054385B2

公开(公告)日：2024-08-06

申请号：US17388301

申请日：2021-07-29

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta Yen ,  Jeronimo Segovia-Fernandez ,  Ricky Alan Jackson ,  Benjamin Cook

IPC: B81B7/00

CPC classification number: B81B7/0048 ,  B81B2201/0271 ,  B81B2203/033

Abstract: A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

公开(公告)号：US20230115689A1

公开(公告)日：2023-04-13

申请号：US17488891

申请日：2021-09-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Steffen Paul Link ,  Ting-Ta Yen ,  Jeronimo Segovia-Fernandez

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02

Abstract: A piezoelectric resonator includes a first conductive layer, and a piezoelectric layer affixed to a first side of the first conductive layer. The piezoelectric resonator also includes a stair step frame structure affixed to a first side of the piezoelectric layer, and a second conductive layer, affixed to the first side of the piezoelectric layer and covering the stair step frame structure.