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公开(公告)号:US20240178154A1
公开(公告)日:2024-05-30
申请号:US18070708
申请日:2022-11-29
Applicant: Texas Instruments Incorporated
Inventor: Yiqi Tang , Rajen Manicon Murugan , Chittranjan Mohan Gupta , Jie Chen , Jaimal Mallory Williamson
IPC: H01L23/552 , H01L21/48 , H01L21/56 , H01L23/498
CPC classification number: H01L23/552 , H01L21/4853 , H01L21/56 , H01L23/49822 , H01L23/49838 , H01L24/16 , H01L2224/16227
Abstract: An electronic device includes a multilevel package substrate, a semiconductor die, and a molded package structure, where the multilevel package substrate has opposite first and second substrate sides, first and second conductive pads spaced apart from one another along the first substrate side, and a conductive substrate terminal that is exposed along the second substrate side and is electrically coupled to the second conductive pad. The semiconductor die is attached to the first substrate side and has opposite first and second die sides, and a die terminal along the first die side, the die terminal electrically coupled to the first conductive pad. The molded has a package side, a metal shield along the package side, and a conductive package via that extends through the molded package structure and electrically couples the metal shield to the second conductive pad.
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公开(公告)号:US20220223509A1
公开(公告)日:2022-07-14
申请号:US17707872
申请日:2022-03-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jaimal Mallory Williamson , Snehamay Sinha
IPC: H01L23/498 , H01L23/64 , H01L23/00 , H01L21/48
Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.
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公开(公告)号:US20230207435A1
公开(公告)日:2023-06-29
申请号:US17563403
申请日:2021-12-28
Applicant: Texas Instruments Incorporated
Inventor: Jaimal Mallory Williamson , Chun Ping Lo , Yutaka Suzuki
IPC: H01L23/498 , H01L21/48
CPC classification number: H01L23/49822 , H01L21/4857 , H01L23/49816 , H01L21/4853 , H01L24/16
Abstract: An electronic device includes a multilevel package substrate with first and second levels, the second level including a first trace layer with a first conductive trace feature, a conductive first via that contacts the first conductive trace feature, and a first dielectric layer, and the first level including a second trace layer with a stair shaped second conductive trace feature, the second conductive trace feature having a first portion with a first thickness, and a second portion, having a second thickness greater than the first thickness.
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公开(公告)号:US20180096860A1
公开(公告)日:2018-04-05
申请号:US15820266
申请日:2017-11-21
Applicant: Texas Instruments Incorporated
Inventor: Jaimal Mallory Williamson , Bernardo Gallegos , Jose Carlos Arroyo
IPC: H01L21/48 , H01L23/498 , H01L23/495
Abstract: A lead frame that is partially covered with an adhesion layer. A method for forming a lead frame with an adhesion layer starting with a lead frame and using a photo-imageable polyimide or epoxy material to form the adhesion layer. A method for forming a lead frame with an adhesion layer starting with a lead frame blank and using a photo-imageable polyimide or epoxy material to form the adhesion layer.
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公开(公告)号:US09934989B1
公开(公告)日:2018-04-03
申请号:US15282534
申请日:2016-09-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jaimal Mallory Williamson , Bernardo Gallegos , Jose Carlos Arroyo
IPC: H01L21/48 , H01L23/495 , H01L23/498
CPC classification number: H01L21/4832 , H01L21/4821 , H01L21/4825 , H01L23/3107 , H01L23/3142 , H01L23/4951 , H01L23/49548 , H01L23/49558 , H01L23/49586 , H01L23/49861 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: A lead frame that is partially covered with an adhesion layer. A method for forming a lead frame with an adhesion layer starting with a lead frame and using a photo-imageable polyimide or epoxy material to form the adhesion layer. A method for forming a lead frame with an adhesion layer starting with a lead frame blank and using a photo-imageable polyimide or epoxy material to form the adhesion layer.
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公开(公告)号:US09281269B2
公开(公告)日:2016-03-08
申请号:US13682576
申请日:2012-11-20
Applicant: Texas Instruments Incorporated
Inventor: Jaimal Mallory Williamson , Nima Shahidi , Yaoyu Pang
IPC: H01L23/48 , H01L23/498
CPC classification number: H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L2224/131 , H01L2224/16225 , H01L2224/8121 , H01L2224/8123 , H01L2224/81815 , H01L2924/15311 , H01L2924/3511 , H01L2924/014
Abstract: An integrated circuit (IC) package, device, including a substrate having a top surface with an IC die mounting area and a peripheral area surrounding the mounting area, a plurality of parallel conductor layers, a plurality of insulating layers and a plurality of plated through holes (PTHs) extending through the conductor layers and insulating layers. Various substrate structures in which certain of the PTHs and/or conductor layers and/or insulating layers have different CTE's than the others is disclosed. The various structures may reduce circuit failures due to substrate warpage and/or solder joint damage associated with a CTE mismatch between the substrate and the IC die.
Abstract translation: 一种集成电路(IC)封装,包括具有具有IC管芯安装区域的顶表面和围绕安装区域的周边区域的衬底的器件,多个平行导体层,多个绝缘层和多个电镀通孔 延伸穿过导体层和绝缘层的孔(PTH)。 公开了其中某些PTH和/或导体层和/或绝缘层具有与其它层不同的CTE的各种衬底结构。 由于与基板和IC芯片之间的CTE失配相关联的基板翘曲和/或焊点损伤,各种结构可能减少电路故障。
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公开(公告)号:US20240282693A1
公开(公告)日:2024-08-22
申请号:US18648599
申请日:2024-04-29
Applicant: Texas Instruments Incorporated
Inventor: Jaimal Mallory Williamson , Jim C. Lo
IPC: H01L23/498 , H01L21/48 , H01L23/00 , H01L23/31
CPC classification number: H01L23/49894 , H01L21/4857 , H01L23/3121 , H01L23/49816 , H01L23/49822 , H01L24/08 , H01L24/16 , H01L2224/08235 , H01L2224/16227
Abstract: A method of making a multilayer package substrate includes forming a plurality of dielectric layers including a top dielectric layer on a top side and a bottom dielectric layer on a bottom side. A top patterned metal layer is on the top dielectric layer and a bottom patterned metal layer is on the bottom dielectric layer. At least one of the top dielectric layer and the bottom dielectric layer is a porous dielectric layer having a plurality of pores including an average porosity of at least 5% averaged over its thickness.
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公开(公告)号:US11270955B2
公开(公告)日:2022-03-08
申请号:US16205436
申请日:2018-11-30
Applicant: Texas Instruments Incorporated
Inventor: Jaimal Mallory Williamson , Guangxu Li
IPC: H01L23/00 , H01L23/498 , H01L21/48
Abstract: A multi-layer package substrate includes a first build-up layer including a first dielectric layer and at least a second build-up layer including a second dielectric layer on the first build-up layer. The second build-up layer includes a top metal layer with a surface configured for attaching at least one integrated circuit (IC) die. The first build-up layer includes a bottom metal layer and a first microvia extending through the first dielectric layer, and the second build-up layer includes at least a second microvia extending through the second dielectric layer that is coupled to the first microvia. A barrier ring that has a coefficient of thermal expansion (CTE) matching material relative to a CTE of a metal of the second microvia positioned along only a portion of a height of at least the second microvia including at least around a top portion of the second microvia.
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公开(公告)号:US10748863B2
公开(公告)日:2020-08-18
申请号:US15835197
申请日:2017-12-07
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jaimal Mallory Williamson , Guangxu Li
Abstract: A semiconductor device includes a first body having a first coefficient of thermal expansion (CTE) and a first surface, a third body having a third CTE and a third surface facing the first surface, and a fourth surface at an angle with respect to the third surface defining an edge of the third body, and a second body having a second CTE higher than the first and the third CTE, the second body contacting the first and the third surfaces. A post having a fourth CTE lower than the second CTE, transects the second body and contacts the edge.
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公开(公告)号:US20200251436A1
公开(公告)日:2020-08-06
申请号:US16778250
申请日:2020-01-31
Applicant: Texas Instruments Incorporated
Inventor: Jaimal Mallory Williamson , Guangxu Li
Abstract: A described example includes a package substrate having an array of die pads arranged in rows and columns on a die mount surface, and having an opposing board side surface; a solder mask layer overlying the die mount surface; a first plurality of solder mask defined openings in the solder mask layer at die pad locations, the solder mask defined openings exposing portions of a surface of corresponding die pads, the surface facing away from the package substrate; and at least one non-solder mask defined opening in the solder mask layer at a die pad location, exposing the entire surface of the die pad and sidewalls of the die pad at the non-solder mask defined opening.
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