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6 条记录 (耗时 0.03 秒)

    Piezoelectric composition and piezoelectric device
    4.
    发明授权
    Piezoelectric composition and piezoelectric device 有权
    压电组合和压电器件

    公开(公告)号：US09537083B2

    公开(公告)日：2017-01-03

    申请号：US14201515

    申请日：2014-03-07

    申请人： TDK CORPORATION

    发明人： Taku Masai ,  Masamitsu Haemori ,  Masahito Furukawa ,  Junichi Yamazaki ,  Kouhei Ohhashi

    IPC分类号： H01L41/187 ,  C04B35/475 ,  H01L41/08 ,  H01L41/316

    CPC分类号： H01L41/1878 ,  C04B35/475 ,  H01L41/0805 ,  H01L41/316

    摘要： Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

    摘要翻译： 本发明提供一种压电组合物，其含有主要成分为钙钛矿型氧化物，其由不含Pb的通式ABO3表示，具有含有Bi，Na，K的A位点和含有Ti的B位点。 Ti部分被选自Mn，Cr，Fe和Co中的至少一种的过渡金属元素Me所取代。钙钛矿型氧化物中Bi和过渡金属元素Me的含量为 主要组分按Biu1MeO3计为6摩尔％至43摩尔％。

    Thin film capacitor and electronic circuit board
    5.
    发明授权
    Thin film capacitor and electronic circuit board 有权

    公开(公告)号：US11532435B2

    公开(公告)日：2022-12-20

    申请号：US17270080

    申请日：2019-08-27

    申请人： TDK CORPORATION

    发明人： Kumiko Yamazaki ,  Takeshi Shibahara ,  Junichi Yamazaki

    IPC分类号： H01G4/12 ,  H01G4/33 ,  H05K1/16 ,  H01G4/008

    摘要： A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

    Amorphous dielectric film and electronic component
    6.
    发明授权
    Amorphous dielectric film and electronic component 有权
    非晶绝缘膜和电子元件

    公开(公告)号：US09382163B2

    公开(公告)日：2016-07-05

    申请号：US14310212

    申请日：2014-06-20

    申请人： TDK CORPORATION

    发明人： Toshihiko Kaneko ,  Saori Takeda ,  Yuki Yamashita ,  Junichi Yamazaki

    IPC分类号： C04B35/00 ,  C04B35/49 ,  H01L49/02

    CPC分类号： C04B35/49 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/6562 ,  H01L28/40

    摘要： The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)α—B—O, x, y and z meet the conditions of 0≦x≦1, 0≦y≦1, 0≦z≦1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by α, 0.5≦α≦1.5.

    摘要翻译： 本发明的目的在于提供一种非晶介质膜和电子元件，其中可以保持相对介电常数和静电电容的温度系数，并且即使电介质膜进一步薄化也可以提高耐电压。 本发明的非晶质介电体膜的特征在于，由作为主成分的无定形组合物构成的电介质膜，其中，A含有选自Ba，Ca，Sr中的至少2种以上的元素， B含有Zr。 当电介质膜的主要成分由（BaxCaySrz）α-B-O表示时，x，y和z分别满足0＆nlE; x＆nlE; 1,0，nlE; y＆nlE; 1,0和nlE; z＆nlE; 1的条件x + y + z = 1，x，y和z中的至少任意两个为0.1以上。 当A / B由α表示时，0.5＆nlE;α＆nlE; 1.5。