公开(公告)号：US12100627B2

公开(公告)日：2024-09-24

申请号：US18180139

申请日：2023-03-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Tung-Huang Chen ,  Yen-Yu Chen ,  Po-An Chen ,  Soon-Kang Huang

IPC分类号： H01L21/8238 ,  H01L21/28 ,  H01L21/321 ,  H01L23/535 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L21/82385 ,  H01L21/28088 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/3212 ,  H01L21/823842 ,  H01L23/535 ,  H01L27/092 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66545

摘要： A method of manufacturing a semiconductor device having metal gates and the semiconductor device are disclosed. The method comprises providing a first sacrificial gate associated with a first conductive type transistor and a second sacrificial gate associated with a second conductive type transistor disposed over the substrate, wherein the first conductive type and the second conductive type are complementary; replacing the first sacrificial gate with a first metal gate structure; forming a patterned dielectric layer and/or a patterned photoresist layer to cover the first metal gate structure; and replacing the second sacrificial gate with a second metal gate structure. The method can improve gate height uniformity during twice metal gate chemical mechanical polish processes.

公开(公告)号：US11605566B2

公开(公告)日：2023-03-14

申请号：US17151780

申请日：2021-01-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Tung-Huang Chen ,  Yen-Yu Chen ,  Po-An Chen ,  Soon-Kang Huang

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L21/28 ,  H01L21/321

摘要： A method of manufacturing a semiconductor device having metal gates and the semiconductor device are disclosed. The method comprises providing a first sacrificial gate associated with a first conductive type transistor and a second sacrificial gate associated with a second conductive type transistor disposed over the substrate, wherein the first conductive type and the second conductive type are complementary; replacing the first sacrificial gate with a first metal gate structure; forming a patterned dielectric layer and/or a patterned photoresist layer to cover the first metal gate structure; and replacing the second sacrificial gate with a second metal gate structure. The method can improve gate height uniformity during twice metal gate chemical mechanical polish processes.