公开(公告)号：US11817384B2

公开(公告)日：2023-11-14

申请号：US17567525

申请日：2022-01-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Shuen-Shin Liang ,  Ken-Yu Chang ,  Hung-Yi Huang ,  Chien Chang ,  Chi-Hung Chuang ,  Kai-Yi Chu ,  Chun-I Tsai ,  Chun-Hsien Huang ,  Chih-Wei Chang ,  Hsu-Kai Chang ,  Chia-Hung Chu ,  Keng-Chu Lin ,  Sung-Li Wang

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76805 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5228

Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.

公开(公告)号：US11217524B1

公开(公告)日：2022-01-04

申请号：US16900622

申请日：2020-06-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Shuen-Shin Liang ,  Ken-Yu Chang ,  Hung-Yi Huang ,  Chien Chang ,  Chi-Hung Chuang ,  Kai-Yi Chu ,  Chun-I Tsai ,  Chun-Hsien Huang ,  Chih-Wei Chang ,  Hsu-Kai Chang ,  Chia-Hung Chu ,  Keng-Chu Lin ,  Sung-Li Wang

IPC: H01L23/522 ,  H01L21/768

Abstract: The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.