公开(公告)号：US09491840B2

公开(公告)日：2016-11-08

申请号：US14026060

申请日：2013-09-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wen-Chien Chang ,  Hsiang-Tai Lu ,  Dai-Jang Chen ,  Chih-Hsien Lin

IPC: H01L21/00 ,  H05F3/02 ,  H01L21/67 ,  H01L23/60 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L24/75 ,  H01L21/67207 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/03 ,  H01L24/04 ,  H01L24/11 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/038 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/75101 ,  H01L2224/752 ,  H01L2224/81009 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/30205 ,  H05F3/02 ,  Y10T29/52 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/207 ,  H01L2924/01029 ,  H01L2924/01047

Abstract: In a process, at least one circuit element is formed in a substrate. A conductive layer is formed over the substrate and in electrical contact with the at least one circuit element. Electrostatic charges are discharged from the substrate via the conductive layer.

Abstract translation: 在一个过程中，在衬底中形成至少一个电路元件。 导电层形成在衬底上并与至少一个电路元件电接触。 静电电荷经由导电层从基板排出。

公开(公告)号：US09941239B2

公开(公告)日：2018-04-10

申请号：US15345134

申请日：2016-11-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chien Chang ,  Hsiang-Tai Lu ,  Dai-Jang Chen ,  Chih-Hsien Lin

IPC: H01L21/00 ,  H01L23/00 ,  H05F3/02 ,  H01L21/67 ,  H01L23/60 ,  H01L25/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L24/75 ,  H01L21/67207 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/03 ,  H01L24/04 ,  H01L24/11 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/038 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/75101 ,  H01L2224/752 ,  H01L2224/81009 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/30205 ,  H05F3/02 ,  Y10T29/52 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/207 ,  H01L2924/01029 ,  H01L2924/01047

Abstract: In a process, at least one circuit element is formed in a substrate. A conductive layer is formed over the substrate and in electrical contact with the at least one circuit element. Electrostatic charges are discharged from the substrate via the conductive layer.