公开(公告)号：US11569130B2

公开(公告)日：2023-01-31

申请号：US17031023

申请日：2020-09-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tzung-Yi Tsai ,  Yen-Ming Chen ,  Tsung-Lin Lee ,  Chih-Chieh Yeh

IPC分类号： H01L21/8234 ,  H01L27/088

摘要： A fin field effect transistor (FinFET) device structure with dummy fin structures and method for forming the same are provided. The FinFET device structure includes an isolation structure over a substrate, and a first fin structure extended above the isolation structure. The fin field effect transistor (FinFET) device structure includes a second fin structure adjacent to the first fin structure, and a material layer formed over the fin structure. The material layer and the isolation structure are made of different materials, the material layer has a top surface with a top width and a bottom surface with a bottom width, and the bottom width is greater than the top width.

公开(公告)号：US12020988B2

公开(公告)日：2024-06-25

申请号：US18156624

申请日：2023-01-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tzung-Yi Tsai ,  Yen-Ming Chen ,  Tsung-Lin Lee ,  Chih-Chieh Yeh

IPC分类号： H01L21/8234 ,  H01L27/088

CPC分类号： H01L21/823431 ,  H01L21/823462 ,  H01L21/823481 ,  H01L27/0886

摘要： A fin field effect transistor (FinFET) device structure with dummy fin structures and method for forming the same are provided. The FinFET device structure includes an isolation structure over a substrate, and a first fin structure extended above the isolation structure. The fin field effect transistor (FinFET) device structure includes a second fin structure adjacent to the first fin structure, and a material layer formed over the fin structure. The material layer and the isolation structure are made of different materials, the material layer has a top surface with a top width and a bottom surface with a bottom width, and the bottom width is greater than the top width.

公开(公告)号：US11848339B2

公开(公告)日：2023-12-19

申请号：US17206572

申请日：2021-03-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Tzung-Yi Tsai ,  Kuo-Yu Wu ,  Tse-Hua Lu

IPC分类号： H01L27/146 ,  H01L21/762

CPC分类号： H01L27/14609 ,  H01L21/76224

摘要： A semiconductor structure includes a semiconductor substrate, an image sensor, and an isolation structure. The isolation structure is adjacent to the image sensor and disposed in the semiconductor substrate. The isolation structure includes a first oxide layer, a second oxide layer over the first oxide layer, and a charge-trapping layer disposed between the first oxide layer and the second oxide layer. The charge-trapping layer includes a material different from those of the first oxide layer and the second oxide layer.