公开(公告)号：US11287746B1

公开(公告)日：2022-03-29

申请号：US17197707

申请日：2021-03-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hung-Chung Chien ,  Hao-Ken Hung ,  Chih-Chieh Yang ,  Ming-Feng Shieh ,  Chun-Ming Hu

IPC分类号： G03F7/20

摘要： Semiconductor processing apparatuses and methods are provided in which a semiconductor wafer is flipped and then rotated between patterning of front and back sides of the semiconductor wafer by first and second reticles, respectively. In some embodiments, a method includes patterning, by a first reticle, a first layer on a first side of a semiconductor wafer while the first side of the semiconductor wafer is facing a first direction. The semiconductor wafer is then flipped. A second side of the semiconductor wafer that is opposite the first side faces the first direction after the flipping the semiconductor wafer. The semiconductor wafer is then rotated about a rotational axis extending along the first direction, and a second layer on the second side of the semiconductor wafer is patterned by a second reticle.

公开(公告)号：US10755936B2

公开(公告)日：2020-08-25

申请号：US16396429

申请日：2019-04-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/306 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US20170309718A1

公开(公告)日：2017-10-26

申请号：US15642559

申请日：2017-07-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L29/423 ,  H01L21/308 ,  H01L21/306 ,  H01L21/283

CPC分类号： H01L21/283 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/823456 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US11862690B2

公开(公告)日：2024-01-02

申请号：US17239254

申请日：2021-04-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Ming-Wen Hsiao ,  Chun-Yen Tai ,  Yen-Hsin Liu ,  Ming-Jhih Kuo ,  Ming-Feng Shieh

IPC分类号： H01L29/40 ,  H01L21/027 ,  H01L21/768 ,  H01L29/417

CPC分类号： H01L29/401 ,  H01L21/0273 ,  H01L21/76895 ,  H01L29/41775 ,  H01L29/41791

摘要： In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

公开(公告)号：US09711604B1

公开(公告)日：2017-07-18

申请号：US15079436

申请日：2016-03-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/308 ,  H01L29/423 ,  H01L21/306 ,  H01L21/283

CPC分类号： H01L21/283 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/823456 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US20190252193A1

公开(公告)日：2019-08-15

申请号：US16396429

申请日：2019-04-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/283 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/308

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US10276392B2

公开(公告)日：2019-04-30

申请号：US15642559

申请日：2017-07-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/306 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US11387105B2

公开(公告)日：2022-07-12

申请号：US17001382

申请日：2020-08-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/306 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US20170194443A1

公开(公告)日：2017-07-06

申请号：US15079436

申请日：2016-03-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L29/423 ,  H01L21/308 ,  H01L21/283 ,  H01L21/306

CPC分类号： H01L21/283 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/823456 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.