公开(公告)号：US20110198592A1

公开(公告)日：2011-08-18

申请号：US12794062

申请日：2010-06-04

申请人： Sun Jae Kim ,  Min Koo Han

发明人： Sun Jae Kim ,  Min Koo Han

IPC分类号： H01L29/786 ,  H01L21/86

CPC分类号： H01L29/78627 ,  H01L29/42384 ,  H01L29/66757 ,  Y10S977/70

摘要： Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask.

摘要翻译： 公开了具有高可靠性并提供简化的制造工艺的薄膜晶体管，以及制造薄膜晶体管的方法。 在该方法中，制备电介质基板，在电介质基板上形成半导体层，在半导体层上形成栅极绝缘膜，在栅极电介质膜上形成第一栅电极， 形成第一栅电极的壁，并且使用第一栅电极作为掩模将杂质注入到半导体层中。

公开(公告)号：US20130089972A1

公开(公告)日：2013-04-11

申请号：US13253616

申请日：2011-10-05

申请人： Min Koo Han ,  Sun Jae Kim

发明人： Min Koo Han ,  Sun Jae Kim

IPC分类号： H01L21/20

CPC分类号： C23C16/24 ,  C23C16/0245 ,  C30B25/105 ,  C30B29/06 ,  C30B29/605 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02658

摘要： Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate.

摘要翻译： 本发明提供一种能够在低温下保持高结晶度的同时沉积在基板上的纳米晶硅膜的形成方法。 该方法包括对衬底进行等离子体处理，并通过在衬底上沉积纳米晶硅膜形成纳米晶硅膜。

公开(公告)号：US20130075731A1

公开(公告)日：2013-03-28

申请号：US13311698

申请日：2011-12-06

申请人： Min Koo Han ,  Sun Jae Kim

发明人： Min Koo Han ,  Sun Jae Kim

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

摘要： Provided are a manufacturing method for a thin film transistor, and a thin film transistor manufactured by the manufacturing method. In the manufacturing method, a semiconductor layer and an insulating layer for stopping etching, which are sequentially stacked, are etched by dry etching and wet etching using a single photoresist pattern, and patterning the semiconductor layer and the insulating layer into a channel layer and an etch stop layer, respectively, thereby simplifying the manufacturing process of the thin film transistor.

摘要翻译： 提供了一种薄膜晶体管的制造方法和通过该制造方法制造的薄膜晶体管。 在制造方法中，通过使用单一光致抗蚀剂图案的干蚀刻和湿蚀刻来蚀刻依次层叠的半导体层和用于停止蚀刻的绝缘层，并将半导体层和绝缘层图案化为沟道层和 蚀刻停止层，从而简化了薄膜晶体管的制造工艺。

公开(公告)号：US08178877B2

公开(公告)日：2012-05-15

申请号：US12794062

申请日：2010-06-04

申请人： Sun Jae Kim ,  Min Koo Han

发明人： Sun Jae Kim ,  Min Koo Han

IPC分类号： H01L29/786 ,  H01L21/86

CPC分类号： H01L29/78627 ,  H01L29/42384 ,  H01L29/66757 ,  Y10S977/70

摘要： Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask.

摘要翻译： 公开了具有高可靠性并提供简化的制造工艺的薄膜晶体管，以及制造薄膜晶体管的方法。 在该方法中，制备电介质基板，在电介质基板上形成半导体层，在半导体层上形成栅极绝缘膜，在栅极电介质膜上形成第一栅电极， 形成第一栅电极的壁，并且使用第一栅电极作为掩模将杂质注入到半导体层中。

公开(公告)号：US10190855B2

公开(公告)日：2019-01-29

申请号：US15163911

申请日：2016-05-25

申请人： Hee Joung Kim ,  Min A Kang ,  Sun Jae Kim ,  Sun Gu Kim

发明人： Hee Joung Kim ,  Min A Kang ,  Sun Jae Kim ,  Sun Gu Kim

IPC分类号： F41J13/02 ,  F41J11/00 ,  F41J13/00

摘要： The present invention provides a bullet collecting box which is installed with a plurality of rubber plates in the bullet collecting box having a rectangular parallelepiped shape and filled with rubber powder filling materials having a particle size of 0.1 to 3 mm therein, thereby collecting the bullets fired in the indoor shooting range without damage, and a bullet collecting system which can be used by installing the bullet collecting box in the indoor shooting range. Also, the present invention provides a bullet collecting system for preventing occurrence of lead fume in the indoor shooting range, in which the beaten zone of the indoor shooting range is newly improved from an existing system of using an iron plate to a system of using powder filling materials, thereby preventing the leakage of lead fume, and contributing to an early normalization of the shooting range and a creative national defense.

公开(公告)号：US07701170B2

公开(公告)日：2010-04-20

申请号：US11236307

申请日：2005-09-26

申请人： Sun Jae Kim

发明人： Sun Jae Kim

IPC分类号： H02J7/00

CPC分类号： H01M2/1066 ,  H01M6/42

摘要： A battery pack including a secondary battery and a frame for mounting the secondary battery therein. A mounting ledge protrudes from one portion of the frame and a guide member protrudes from another portion of the frame. A circuit section is installed at a portion of the frame and inserted between the mounting ledge and the guide member so as to be connected to the secondary battery. A fixing part is provided in the frame and the circuit section in order to fix the circuit section to the frame.

摘要翻译： 一种电池组，包括二次电池和用于将二次电池安装在其中的框架。 安装凸缘从框架的一部分突出，并且引导构件从框架的另一部分突出。 电路部分安装在框架的一部分并插入在安装凸缘和引导构件之间，以便连接到二次电池。 在框架和电路部分中设置固定部分，以将电路部分固定在框架上。

公开(公告)号：US07531985B2

公开(公告)日：2009-05-12

申请号：US11234844

申请日：2005-09-23

申请人： Sun Jae Kim

发明人： Sun Jae Kim

IPC分类号： H02J7/00

CPC分类号： H01M2/1066 ,  H01M6/42

摘要： A pack case for a secondary battery. The pack case includes a frame member having a rectangular shape and a mounting ledge at an inner wall thereof. The pack case includes a dummy block mounted within the frame on one side of the mounting ledge. The pack case allows a single secondary battery to be mounted in a pack case adaptable for two secondary batteries.

摘要翻译： 二次电池的包装盒。 包装盒包括具有矩形形状的框架件和在其内壁上的安装凸缘。 包装盒包括安装在安装凸缘的一侧上的框架内的虚拟块。 包装盒允许单个二次电池安装在适用于两个二次电池的包装盒中。

公开(公告)号：US07867437B2

公开(公告)日：2011-01-11

申请号：US12006170

申请日：2007-12-31

申请人： Woo Hyun Nam ,  Kyung Sub Lee ,  Dong Hyun Kim ,  Sun Jae Kim ,  Nam Hee Lee ,  Hyo Jin Oh

发明人： Woo Hyun Nam ,  Kyung Sub Lee ,  Dong Hyun Kim ,  Sun Jae Kim ,  Nam Hee Lee ,  Hyo Jin Oh

IPC分类号： B22F7/00 ,  B01J23/00

CPC分类号： C22C29/12 ,  B82Y30/00 ,  C01G23/047 ,  C01G23/0536 ,  C01P2002/54 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/13 ,  C04B35/62259 ,  C04B35/62655 ,  C04B2235/3232 ,  C04B2235/405 ,  C04B2235/5284 ,  C22C2026/002 ,  H01M8/04208 ,  Y02P70/56

摘要： The present invention provides a method of manufacturing Ni-doped TiO2 nanotube-shaped powder and a method of manufacturing a sheet film to be inserted into a high-pressure hydrogen tank for a fuel cell vehicle by mixing the Ni-doped TiO2 nanotube-shaped powder with a binder and compressing the mixture. The method of manufacturing Ni-doped TiO2 nanotube-shaped powder includes: forming Ni-doped TiO2 nanotube-shaped powder using Ni-doped TiO2 powder as a starting material; and drying the Ni-doped TiO2 nanotube-shaped powder in the temperature range of 60 to 200° C. for 2 to 24 hours.

摘要翻译： 本发明提供一种制造掺杂Ni的TiO 2纳米管状粉末的方法以及通过将掺入Ni的TiO 2纳米管状粉末混合而制成插入燃料电池车辆的高压氢罐的片状薄膜的方法 用粘合剂压制混合物。 制造掺杂Ni的TiO 2纳米管粉末的方法包括：使用掺杂Ni的TiO 2粉末作为原料形成Ni掺杂的TiO 2纳米管状粉末; 并在60〜200℃的温度范围内干燥Ni掺杂的TiO 2纳米管状粉末2〜24小时。

公开(公告)号：US20090098005A1

公开(公告)日：2009-04-16

申请号：US12006170

申请日：2007-12-31

申请人： Woo Hyun Nam ,  Kyung Sub Lee ,  Dong Hyun Kim ,  Sun Jae Kim ,  Nam Hee Lee ,  Hyo Jin Oh

发明人： Woo Hyun Nam ,  Kyung Sub Lee ,  Dong Hyun Kim ,  Sun Jae Kim ,  Nam Hee Lee ,  Hyo Jin Oh

IPC分类号： B22F7/00

CPC分类号： C22C29/12 ,  B82Y30/00 ,  C01G23/047 ,  C01G23/0536 ,  C01P2002/54 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/13 ,  C04B35/62259 ,  C04B35/62655 ,  C04B2235/3232 ,  C04B2235/405 ,  C04B2235/5284 ,  C22C2026/002 ,  H01M8/04208 ,  Y02P70/56

摘要： The present invention provides a method of manufacturing Ni-doped TiO2 nanotube-shaped powder and a method of manufacturing a sheet film to be inserted into a high-pressure hydrogen tank for a fuel cell vehicle by mixing the Ni-doped TiO2 nanotube-shaped powder with a binder and compressing the mixture. The method of manufacturing Ni-doped TiO2 nanotube-shaped powder includes: forming Ni-doped TiO2 nanotube-shaped powder using Ni-doped TiO2 powder as a starting material; and drying the Ni-doped TiO2 nanotube-shaped powder in the temperature range of 60 to 200° C. for 2 to 24 hours.

摘要翻译： 本发明提供一种制造掺杂Ni的TiO 2纳米管状粉末的方法以及通过将掺入Ni的TiO 2纳米管状粉末混合而制成插入燃料电池车辆的高压氢罐的片状薄膜的方法 用粘合剂压制混合物。 制造掺杂Ni的TiO 2纳米管粉末的方法包括：使用掺杂Ni的TiO 2粉末作为原料形成Ni掺杂的TiO 2纳米管状粉末; 并在60〜200℃的温度范围内干燥Ni掺杂的TiO 2纳米管状粉末2〜24小时。

公开(公告)号：US5985211A

公开(公告)日：1999-11-16

申请号：US96660

申请日：1998-06-12

申请人： Yong Hwan Jeong ,  Jong Hyuk Baek ,  Byong Kwon Choi ,  Kyeong Ho Kim ,  Sun Jae Kim ,  Youn Ho Jung ,  Il Hiun Kuk

发明人： Yong Hwan Jeong ,  Jong Hyuk Baek ,  Byong Kwon Choi ,  Kyeong Ho Kim ,  Sun Jae Kim ,  Youn Ho Jung ,  Il Hiun Kuk

IPC分类号： C22C16/00

CPC分类号： C22C16/00

摘要： The present invention is directed to an advanced zirconium alloy having superior corrosion resistance and high strength suitable for fuel rod cladding, spacer grids and other structural components in a reactor core of nuclear power plants.

摘要翻译： 本发明涉及一种具有优异的耐腐蚀性和高强度的先进的锆合金，适用于核电站的反应堆核心中的燃料棒包层，间隔栅格和其他结构部件。