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公开(公告)号：US10664414B2
公开(公告)日：2020-05-26
申请号：US15868635
申请日：2018-01-11
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
Abstract: A controller for a data storage device is disclosed. The controller includes an encryptor and electronic fuses. The electronic fuses is provided for storage of a key which is supposed to be used by the encryptor to encrypt user data before storing the user data in the data storage device. When a user deletes the user data, the controller changes at least one bit of the key stored in the electronic fuses from ‘0’ to ‘1’. Due to the change of the key stored in the electronic fuses for the encryptor, the deleted user data is fully prevented from leaking from the data storage device. A data storage device with a high confidential level is achieved.
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公开(公告)号：US10031698B2
公开(公告)日：2018-07-24
申请号：US15785325
申请日：2017-10-16
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
Abstract: A method of wear leveling for a data storage device is provided. The data storage device includes a non-volatile memory having a plurality of blocks. A portion of the blocks not having any valid data are defined as spare blocks, and the spare blocks are associated with a spare pool. The method includes the steps of: maintaining a management table recording a plurality of physical block numbers and a plurality of block statuses corresponding to the blocks; selecting a first spare block having a first smallest physical block number as a current temporary block; receiving a write command from a host; determining whether data in the write command shall be written into the current temporary block; if false, selecting a second spare block having a second smallest physical block number as a next temporary block; and writing the data into the next temporary block.
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公开(公告)号：US11016841B2
公开(公告)日：2021-05-25
申请号：US16034915
申请日：2018-07-13
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
Abstract: The invention introduces a method for proactive error-correcting code (ECC) failure handling, at least including the following steps: obtaining a completion element (CE) from a completion queue (CQ); determining whether an execution reply table of the CE comprises an unsecure value; if so, reallocating a physical address for a user data transaction corresponding to the unsecure value; and outputting a write command into a submission queue (SQ) for programming the user data transaction into the reallocated physical address.
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公开(公告)号：US10249970B1
公开(公告)日：2019-04-02
申请号：US15938436
申请日：2018-03-28
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
Abstract: A memory device is provided. The memory device includes a substrate, a first interface connector, a second interface connector and a plurality of memory chips. The substrate includes a first edge, a second edge, a third edge and a fourth edge. The first interface connector is disposed on the first edge, wherein the first interface connector includes a plurality of first edge-board contacts, and the first edge-board contacts extend toward a first direction. The second interface connector is disposed on the second edge, the second interface connector includes a plurality of second edge-board contacts, and the second edge-board contacts extend toward a second direction. The memory chips are disposed on the substrate, wherein the second interface connector is located between the memory chips and the first interface connector in the first direction.
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公开(公告)号：US12189538B2
公开(公告)日：2025-01-07
申请号：US17690800
申请日：2022-03-09
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
IPC: G06F12/1009 , G06F12/109
Abstract: The invention introduces a method for performing operations to namespaces of a flash memory device, by a processing unit of a storage device, at least including the steps: receiving a cross-namespace data-movement command from a host, requesting to move user data of a first logical address of a first namespace to a second logical address of a second namespace; cutting first physical address information corresponding to the first logical address of a first logical-physical mapping table corresponding to the first namespace; and storing the first physical address information in an entry corresponding to a second logical address of a second logical-physical mapping table corresponding to the second namespace.
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Patent Agency Ranking
公开(公告)号：US11307992B2
公开(公告)日：2022-04-19
申请号：US16164252
申请日：2018-10-18
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
IPC: G06F12/1009 , G06F12/109
Abstract: The invention introduces a method for performing operations to namespaces of a flash memory device, at least including the steps: receiving a namespace setting-update command from a host, requesting to update a namespace size of a namespace; determining whether the updated namespace size of the namespace can be supported; and when the updated namespace size of the namespace can be supported, updating a logical-physical mapping table of the namespace to enable the namespace to store user data of the updated namespace size.
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公开(公告)号：US09830098B1
公开(公告)日：2017-11-28
申请号：US15207456
申请日：2016-07-11
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
CPC classification number: G06F3/0659 , G06F3/0616 , G06F3/064 , G06F3/0679 , G11C16/10 , G11C16/349 , G11C16/3495 , G11C29/52 , G11C29/70 , G11C2029/0409
Abstract: A method of wear leveling for a data storage device is provided. The data storage device includes a non-volatile memory having a plurality of blocks. A portion of the blocks not having any valid data are defined as spare blocks, and the spare blocks are associated with a spare pool. The method includes the steps of: maintaining a management table recording a plurality of physical block numbers and a plurality of block statuses corresponding to the blocks; selecting a first spare block having a first smallest physical block number as a current temporary block; receiving a write command from a host; determining whether data in the write command shall be written into the current temporary block; if false, selecting a second spare block having a second smallest physical block number as a next temporary block; and writing the data into the next temporary block.
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8.发明授权公开(公告)号：US10782910B2
公开(公告)日：2020-09-22
申请号：US16015703
申请日：2018-06-22
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
Abstract: The invention introduces a method for internal data movements of a flash memory device, performed by a host, at least including the following steps: generating an internal movement command when detecting that a usage-status for an I/O channel of a solid state disk (SSD) has met a condition; and providing the internal movement command to direct the SSD to perform an internal data-movement operation in the designated I/O channel.
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公开(公告)号：US10649893B2
公开(公告)日：2020-05-12
申请号：US16155044
申请日：2018-10-09
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Liu Lin
Abstract: Namespace planning of non-volatile memory that takes advantage of multi-channel accessing and considers multi-channel properties is provided. A data storage device includes a non-volatile memory and a controller. The controller accesses the non-volatile memory through multiple channels. When performing namespace planning on the non-volatile memory, the controller makes each assigned channel correspond to just one namespace.
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10.发明申请公开(公告)号：US20190129629A1
公开(公告)日：2019-05-02
申请号：US15889217
申请日：2018-02-06
Applicant: Silicon Motion Inc.
Inventor： Sheng-Liu Lin
IPC: G06F3/06
Abstract: A method for controlling operations of a data storage device, the associated data storage device and the controller thereof are provided. The method can comprise: selecting a block of multiple blocks of a non-volatile (NV) memory element of a plurality of NV memory elements; receiving a data-writing command from a host device; generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the block comprises the plurality of non-reserved word-lines and a plurality of reserved word-lines, and each non-reserved word-line of the plurality of non-reserved word-lines comprises multiple pages; and writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.
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