公开(公告)号：US20230006621A1

公开(公告)日：2023-01-05

申请号：US17363049

申请日：2021-06-30

Applicant: Silicon Laboratories Inc.

Inventor： Ruifeng Sun ,  Sherry Wu ,  Michael S. Johnson ,  Vitor Pereira

IPC: H03F3/24 ,  H03F1/02 ,  H04B1/04 ,  H04L27/12

Abstract: In one embodiment, a dual-mode power amplifier that can operate in different modes includes: a first pair of metal oxide semiconductor field effect transistors (MOSFETs) to receive and pass a constant envelope signal; a second pair of MOSFETs to receive and pass a variable envelope signal, where first terminals of the first pair of MOSFETs are coupled to first terminals of the second pair of MOSFETs, and second terminals of the first pair of MOSFETs are coupled to. second terminals of the second pair of MOSFETs; and a shared MOSFET stack coupled to the first pair of MOSFETs and the second pair of MOSFETs.

公开(公告)号：US12009793B2

公开(公告)日：2024-06-11

申请号：US18175593

申请日：2023-02-28

Applicant: Silicon Laboratories Inc.

Inventor： Ruifeng Sun ,  Sherry Wu ,  Michael S. Johnson ,  Vitor Pereira

IPC: H03F3/24 ,  H03F1/02 ,  H04B1/04 ,  H04L27/12

CPC classification number: H03F3/245 ,  H03F1/0233 ,  H04B1/04 ,  H04L27/12 ,  H03F2200/105 ,  H03F2200/451 ,  H04B2001/0408

Abstract: In one embodiment, a dual-mode power amplifier that can operate in different modes includes: a first pair of metal oxide semiconductor field effect transistors (MOSFETs) to receive and pass a constant envelope signal; a second pair of MOSFETs to receive and pass a variable envelope signal, where first terminals of the first pair of MOSFETs are coupled to first terminals of the second pair of MOSFETs, and second terminals of the first pair of MOSFETs are coupled to. second terminals of the second pair of MOSFETs; and a shared MOSFET stack coupled to the first pair of MOSFETs and the second pair of MOSFETs.

公开(公告)号：US20230208368A1

公开(公告)日：2023-06-29

申请号：US18175593

申请日：2023-02-28

Applicant: Silicon Laboratories Inc.

Inventor： Ruifeng Sun ,  Sherry Wu ,  Michael S. Johnson ,  Vitor Pereira

IPC: H03F3/24 ,  H03F1/02 ,  H04B1/04 ,  H04L27/12

CPC classification number: H03F3/245 ,  H03F1/0233 ,  H04B1/04 ,  H04L27/12 ,  H04B2001/0408 ,  H03F2200/105 ,  H03F2200/451

Abstract: In one embodiment, a dual-mode power amplifier that can operate in different modes includes: a first pair of metal oxide semiconductor field effect transistors (MOSFETs) to receive and pass a constant envelope signal; a second pair of MOSFETs to receive and pass a variable envelope signal, where first terminals of the first pair of MOSFETs are coupled to first terminals of the second pair of MOSFETs, and second terminals of the first pair of MOSFETs are coupled to. second terminals of the second pair of MOSFETs; and a shared MOSFET stack coupled to the first pair of MOSFETs and the second pair of MOSFETs.

公开(公告)号：US11646705B2

公开(公告)日：2023-05-09

申请号：US17363049

申请日：2021-06-30

Applicant: Silicon Laboratories Inc.

Inventor： Ruifeng Sun ,  Sherry Wu ,  Michael S. Johnson ,  Vitor Pereira

IPC: H03F1/02 ,  H03F3/24 ,  H04B1/04 ,  H04L27/12

CPC classification number: H03F3/245 ,  H03F1/0233 ,  H04B1/04 ,  H04L27/12 ,  H03F2200/105 ,  H03F2200/451 ,  H04B2001/0408

Abstract: In one embodiment, a dual-mode power amplifier that can operate in different modes includes: a first pair of metal oxide semiconductor field effect transistors (MOSFETs) to receive and pass a constant envelope signal; a second pair of MOSFETs to receive and pass a variable envelope signal, where first terminals of the first pair of MOSFETs are coupled to first terminals of the second pair of MOSFETs, and second terminals of the first pair of MOSFETs are coupled to. second terminals of the second pair of MOSFETs; and a shared MOSFET stack coupled to the first pair of MOSFETs and the second pair of MOSFETs.