公开(公告)号：US20120329245A1

公开(公告)日：2012-12-27

申请号：US13338263

申请日：2011-12-28

申请人： Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata ,  Shinsuke Fujiwara

发明人： Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata ,  Shinsuke Fujiwara

IPC分类号： H01L21/78 ,  C01B21/06

CPC分类号： H01L29/045 ,  C01B21/0632 ,  C01P2002/90 ,  C01P2006/12 ,  C30B29/403 ,  C30B29/406 ,  C30B33/06 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/16 ,  H01L33/32

摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.

摘要翻译： 本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有 平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与 并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

公开(公告)号：US08598685B2

公开(公告)日：2013-12-03

申请号：US12817753

申请日：2010-06-17

申请人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata

发明人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/36 ,  H01L33/0075 ,  H01L33/16

摘要： A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.

摘要翻译： GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向 （000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大 在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合 可以获得具有小的特性变化的GaN基半导体器件的制造。

公开(公告)号：US08524575B2

公开(公告)日：2013-09-03

申请号：US13338263

申请日：2011-12-28

申请人： Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata ,  Shinsuke Fujiwara

发明人： Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata ,  Shinsuke Fujiwara

IPC分类号： H01L21/00 ,  H01L29/20 ,  H01L21/20 ,  H01L21/06

CPC分类号： H01L29/045 ,  C01B21/0632 ,  C01P2002/90 ,  C01P2006/12 ,  C30B29/403 ,  C30B29/406 ,  C30B33/06 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/16 ,  H01L33/32

摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.

摘要翻译： 本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有 平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与 并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

公开(公告)号：US20120074403A1

公开(公告)日：2012-03-29

申请号：US13111595

申请日：2011-05-19

申请人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hideki Osada

发明人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hideki Osada

IPC分类号： H01L29/20 ,  C30B19/12 ,  C30B19/02 ,  C30B25/20 ,  C30B23/02

CPC分类号： H01L21/0262 ,  C30B23/025 ,  C30B25/18 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254

摘要： The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with few stacking faults. A method for growing a GaN crystal includes the steps of preparing a GaN seed crystal substrate 10 having a main surface 10m inclined at an angle of 20° to 90° from a (0001) plane 10c and growing a GaN crystal 20 on the GaN seed crystal substrate 10. The GaN seed crystal substrate 10 and the GaN crystal 20 have a difference in impurity concentration of 3×1018 cm−3 or less.

摘要翻译： 本发明是提供一种GaN晶体生长方法，用于在具有从（0001）面倾斜20°至90°的主表面的GaN晶种衬底上生长具有很少堆垛层错的GaN晶体，并且还提供 具有很少层叠缺陷的GaN晶体衬底。 一种用于生长GaN晶体的方法包括以下步骤：制备具有从（0001）面10c以20°至90°的角度倾斜的主表面10m并在GaN晶种上生长GaN晶体20的GaN晶种衬底10 GaN晶种基板10和GaN晶体20的杂质浓度差为3×1018cm-3以下。

公开(公告)号：US09005362B2

公开(公告)日：2015-04-14

申请号：US13115560

申请日：2011-05-25

申请人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

发明人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

IPC分类号： C30B21/02 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/02389 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates 10 including main surfaces 10m having a shape of a triangle or a convex quadrangle that allows two-dimensional close packing of the plurality of tile substrates; a step of arranging the plurality of tile substrates 10 so as to be two-dimensionally closely packed such that, at any point across which vertexes of the plurality of tile substrates 10 oppose one another, 3 or less of the vertexes oppose one another; and a step of growing a group III nitride crystal 20 on the main surfaces 10m of the plurality of tile substrates arranged.

摘要翻译： 本发明提供一种通过使用多个瓦片基板来生长具有大尺寸并且具有少量形成在晶体的主表面中的凹坑的III族氮化物晶体的方法。 用于生长III族氮化物晶体的方法包括制备多个瓦片基板10的步骤，该瓦片基板10包括允许多个瓦片基板的二维密封的具有三角形形状的主表面10m或凸形四边形; 将多个瓦片基板10布置成二维紧密堆叠的步骤，使得在多个瓦片基板10的顶点彼此相对的任何点处，3个或更少的顶点彼此相对; 以及在布置的多个瓦片基板的主表面10m上生长III族氮化物晶体20的步骤。

公开(公告)号：US08658517B2

公开(公告)日：2014-02-25

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

公开(公告)号：US07943964B2

公开(公告)日：2011-05-17

申请号：US12096986

申请日：2006-10-16

申请人： Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

发明人： Shinsuke Fujiwara ,  Tomoki Uemura ,  Takuji Okahisa ,  Koji Uematsu ,  Manabu Okui ,  Muneyuki Nishioka ,  Shin Hashimoto

IPC分类号： H01L33/30

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0254

摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.

摘要翻译： 本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。 主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。 内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。 由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及 制造相同。

公开(公告)号：US20100139553A1

公开(公告)日：2010-06-10

申请号：US12630836

申请日：2009-12-03

申请人： Hiroaki Yoshida ,  Shinsuke Fujiwara ,  Koji Uematsu ,  Masanori Morishita

发明人： Hiroaki Yoshida ,  Shinsuke Fujiwara ,  Koji Uematsu ,  Masanori Morishita

IPC分类号： C30B25/02

CPC分类号： C30B25/20 ,  C30B29/406

摘要： Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm−3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.

摘要翻译： 提供了在高于1100℃的环境温度下，通过HVPE在第一III族氮化物晶体的整个主表面上生长第二III族氮化物晶体的方法。本III-氮化物晶体生长方法包括： 制备碱金属原子浓度小于1.0×1018cm-3的第一III族氮化物晶体（10）的步骤; 以及在高于1100℃的环境温度下通过HVPE在第一III族氮化物晶体（10）的主表面（10m）上生长第二III族氮化物晶体（20）的步骤。

公开(公告)号：US20120034149A1

公开(公告)日：2012-02-09

申请号：US13235989

申请日：2011-09-19

申请人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hitoshi Kasai ,  Takuji Okahisa

发明人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hitoshi Kasai ,  Takuji Okahisa

IPC分类号： C01B21/06 ,  C30B25/02

CPC分类号： H01L33/325 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02664

摘要： The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

摘要翻译： 本发明涉及由具有（0001）面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-11面]的至少一个平面而获得的GaN结晶自立式基板， （0001）平面生长晶体区域的碳浓度为5×1016原子/ cm3以下的构成除了晶体侧面以外的构成晶面区域的晶体生长面， 硅浓度为5×10 17原子/ cm 3以上且2×10 18原子/ cm 3以下，氧浓度为1×10 17原子/ cm 3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下，硅浓度为5×10 17原子/ cm 3以下，氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。

公开(公告)号：US20110100292A1

公开(公告)日：2011-05-05

申请号：US13003540

申请日：2009-07-14

申请人： Koji Uematsu ,  Hiroaki Yoshida ,  Masanori Morishita ,  Shinsuke Fujiwara

发明人： Koji Uematsu ,  Hiroaki Yoshida ,  Masanori Morishita ,  Shinsuke Fujiwara

IPC分类号： C30B19/04

CPC分类号： H01L21/0254 ,  C30B9/00 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02625 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/16

摘要： A method for growing a GaN crystal includes a step of preparing a substrate (10) that includes a main surface (10m) and includes a Gax Aly In1-x-y N seed crystal (10a) including the main surface (10m) and a step of growing a GaN crystal (20) on the main surface (10m) at an atmosphere temperature of 800° C. or more and 1500° C. or less and at an atmosphere pressure of 500 atmospheres or more and less than 2000 atmospheres by bringing a solution (7) provided by dissolving (5) nitrogen in a Ga melt (3) into contact with the main surface (10m) of the substrate (10). The method further includes, after the step of preparing the substrate (10) and before the step of growing the GaN crystal (20), a step of etching the main surface (10m) of the substrate (10). Thus, a method for growing a GaN crystal having a low dislocation density and high crystallinity is provided without adding impurities other than raw materials to the melt and without increasing the size of a crystal growth apparatus.

摘要翻译： 一种用于生长GaN晶体的方法包括制备包括主表面（10m）并包括主表面（10m）的Gax Aly In 1-xy N晶种（10a）的衬底（10）的步骤和 在800℃以上且1500℃以下的气氛温度和500大气压以上且小于2000个大气压的气氛下，在主表面（10μm）上生长GaN晶体（20），通过使 通过将（5）氮在Ga熔体（3）中溶解以与衬底（10）的主表面（10m）接触而提供的溶液（7）。 该方法还包括在制备衬底（10）的步骤之后和生长GaN晶体（20）的步骤之前，蚀刻衬底（10）的主表面（10m）的步骤。 因此，提供了一种生长具有低位错密度和高结晶度的GaN晶体的方法，而不增加熔体中的原料以外的杂质，而不增加晶体生长装置的尺寸。