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    Sputtering Target for Magnetic Recording Film and Process for Production Thereof
    3.
    发明申请
    Sputtering Target for Magnetic Recording Film and Process for Production Thereof 有权
    磁记录膜溅射靶及其制造方法

    公开(公告)号：US20130248362A1

    公开(公告)日：2013-09-26

    申请号：US13990109

    申请日：2011-10-19

    Applicant: Shin-ichi Ogino ,  Atsushi Nara ,  Hideo Takami

    Inventor： Shin-ichi Ogino ,  Atsushi Nara ,  Hideo Takami

    IPC: C23C14/34 ,  B22F3/14

    CPC classification number: C23C14/3414 ,  B22F3/14 ,  C22C5/04 ,  C22C19/07 ,  C22C32/0026 ,  C22C33/0292 ,  C22C2202/02 ,  G11B5/851 ,  H01F41/183

    Abstract: A sputtering target for a magnetic recording film containing SiO2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

    Abstract translation: 用于含有SiO 2的磁记录膜的溅射靶，其中，在X射线衍射中，石英相对于背景强度（即石英峰强度/背景强度）的（011）面的峰强度比为1.40以上。 本发明的目的是获得能够抑制溅射中产生颗粒的目标中形成方英石的磁记录膜的溅射靶，缩短烧结时间，磁性和细分离单畴 沉积后的颗粒，并提高记录密度。

    SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCING SAME
    5.
    发明申请
    SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCING SAME 有权
    用于磁记录膜的溅射靶及其制造方法

    公开(公告)号：US20130098760A1

    公开(公告)日：2013-04-25

    申请号：US13808172

    申请日：2011-02-02

    Applicant: Hideo Takami ,  Atsushi Nara ,  Shin-ichi Ogino

    Inventor： Hideo Takami ,  Atsushi Nara ,  Shin-ichi Ogino

    IPC: C23C14/14

    CPC classification number: C23C14/14 ,  C23C14/0617 ,  C23C14/0688 ,  C23C14/083 ,  C23C14/3414 ,  G11B5/851 ,  H01J37/3426

    Abstract: Provided is a sputtering target containing SiO2 for a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO2, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.

    Abstract translation: 提供了一种包含用于磁记录膜的SiO 2的溅射靶，其中结晶SiO 2的方石英的峰强度与X射线衍射中的背景强度（方石英峰强度/背景强度）的比率为1.40以下 。 本发明的目的在于获得能够抑制溅射中产生颗粒的靶中方英石形成的磁记录膜的溅射靶，并且缩短了老化时间。

    Ge-Cr Alloy Sputtering Target
    9.
    发明申请
    Ge-Cr Alloy Sputtering Target 审中-公开
    Ge-Cr合金溅射靶

    公开(公告)号：US20110036710A1

    公开(公告)日：2011-02-17

    申请号：US12913973

    申请日：2010-10-28

    Applicant: Hideo Takami ,  Hirohisa Ajima

    Inventor： Hideo Takami ,  Hirohisa Ajima

    IPC: C23C14/14

    CPC classification number: C22C28/00 ,  C22C1/04 ,  C22C30/00 ,  C23C14/3414 ,  G11B5/851

    Abstract: A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 μm or less, and Ge powder having a minus sieve of 250 μm or less and having a BET specific surface area of 0.4 m2/g or less are dispersively mixed in an even manner, and sintered thereafter. Thereby provided is a Ge—Cr alloy sputtering target capable of suppressing variation of the deposition speed and film composition, as well as improving the production yield, of the GeCrN layer deposited with reactive sputtering as the intermediate layer between the recording layer and protective layer of a phase change optical disk, and the manufacturing method of such a target.

    Abstract translation: 含有5〜50原子％的Cr且相对密度为95％以上的Ge-Cr合金溅射靶，以及这样的Ge-Cr合金溅射靶的制造方法，其中，具有负极筛为75μm的Cr粉末或 较少，并且具有250μm或更小的负极筛和BET比表面积为0.4m 2 / g或更小的Ge粉末以均匀的方式分散混合，然后烧结。 由此，作为记录层与保护层之间的中间层，能够抑制沉积有反应性溅射的GeCrN层的沉积速度和膜组成的变化以及提高生产率的Ge-Cr合金溅射靶 相变光盘及其制造方法。

    Sputtering Target for Phase-Change Memory, Film for Phase Change Memory formed by using the Target, and Method for Producing the Target
    10.
    发明申请
    Sputtering Target for Phase-Change Memory, Film for Phase Change Memory formed by using the Target, and Method for Producing the Target 有权
    用于相变存储器的溅射目标，通过使用目标形成的相变记忆膜，以及用于产生目标的方法

    公开(公告)号：US20070062808A1

    公开(公告)日：2007-03-22

    申请号：US11533945

    申请日：2006-09-21

    Applicant: Masataka Yahagi ,  Yuichiro Shindo ,  Hideo Takami

    Inventor： Masataka Yahagi ,  Yuichiro Shindo ,  Hideo Takami

    IPC: C23C14/00

    CPC classification number: G11B7/243 ,  C23C14/06 ,  C23C14/3414 ,  G11B7/266 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625

    Abstract: The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less. This sputtering target for a phase change memory is capable of reducing, as much as possible, impurities that cause the reduction in the number of times rewriting can be conducted as a result of such impurities segregating and condensing in the vicinity of the boundary face of the memory point and non-memory point; in particular, impurity elements that affect the crystallization speed, reducing the compositional deviation of the target in relation to the intended composition, and improving the rewriting properties and crystallization speed of a phase change memory by suppressing the compositional segregation of the target.

    Abstract translation: 本发明提供了一种用于相变存储器的溅射靶和形成有这种靶的相变存储膜及其制造方法，其特征在于，溅射靶由不低于三分体系的元件组成，并且具有 作为其主要成分，选自锑，碲和硒的一种或多种组分，并且与预期组成相关的组成偏差为±1.0at％或更低。 用于相变存储器的这种溅射靶能够尽可能地减少由于这种杂质在边界面附近偏析和冷凝而引起重写次数减少的杂质。 记忆点和非记忆点; 特别是影响结晶速度的杂质元素，降低目标相对于目标组成的组成偏差，通过抑制靶的组成偏析来提高相变记忆的重写性能和结晶速度。

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