公开(公告)号：US20180257993A1

公开(公告)日：2018-09-13

申请号：US15750459

申请日：2016-07-25

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Naofumi SHINYA ,  Yu HAMAGUCHI ,  Norio YAMAGATA ,  Osamu YAMADA ,  Takehisa MINOWA

IPC: C04B35/565 ,  C04B41/88 ,  C30B19/06 ,  C30B29/36 ,  C01B32/956

CPC classification number: C04B35/565 ,  C01B32/956 ,  C04B35/573 ,  C04B41/85 ,  C04B41/88 ,  C04B2235/3826 ,  C04B2235/40 ,  C04B2235/402 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/407 ,  C04B2235/428 ,  C04B2235/6585 ,  C04B2235/70 ,  C04B2235/723 ,  C30B19/04 ,  C30B19/06 ,  C30B29/36 ,  C30B35/002

Abstract: In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating.

公开(公告)号：US20180230623A1

公开(公告)日：2018-08-16

申请号：US15750308

申请日：2016-07-25

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Naofumi SHINYA ,  Yu HAMAGUCHI ,  Norio YAMAGATA ,  Osamu YAMADA ,  Takehisa MINOWA

IPC: C30B19/04 ,  C30B29/36 ,  C30B19/06

Abstract: In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating. Since the oxygen content of SiC is 100 ppm or less, generation of gas in the Si—C solution is suppressed.

公开(公告)号：US20150159299A1

公开(公告)日：2015-06-11

申请号：US14559299

申请日：2014-12-03

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Naofumi SHINYA ,  Yu HAMAGUCHI ,  Norio YAMAGATA ,  Takehisa MINOWA

IPC: C30B15/02 ,  C30B29/36 ,  C30B15/20 ,  C30B13/02

CPC classification number: C30B13/02 ,  C30B9/10 ,  C30B11/08 ,  C30B13/14 ,  C30B15/02 ,  C30B15/10 ,  C30B15/206 ,  C30B17/00 ,  C30B19/04 ,  C30B29/36

Abstract: In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. The SiC crucible is heated such that, for example, an isothermal line representing a temperature distribution within the crucible draws an inverted convex shape; and Si and C, which are derived from a main component SiC of the crucible, are eluted from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution, thereby suppressing precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution. To the Si—C solution of this state, a SiC seed crystal is moved down from the upper portion of the crucible closer to the Si—C solution and brought into contact with the Si—C solution to grow a SiC single crystal on the SiC seed crystal.

Abstract translation: 在本发明中，以SiC为主要成分的坩埚用作Si-C溶液的容器。 加热SiC坩埚，使得例如表示坩埚内的温度分布的等温线呈现倒置的凸形状; 从坩埚的主要组分SiC衍生的Si和C从与Si-C溶液接触的坩埚的高温表面区域洗脱到Si-C溶液中，从而抑制了 SiC多晶体在与Si-C溶液接触的坩埚表面上。 对于该状态的Si-C溶液，SiC晶种从坩埚上部更靠近Si-C溶液向下移动并与Si-C溶液接触以在SiC上生长SiC单晶 晶种。

公开(公告)号：US20150159297A1

公开(公告)日：2015-06-11

申请号：US14559362

申请日：2014-12-03

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Naofumi SHINYA ,  Yu HAMAGUCHI ,  Norio YAMAGATA ,  Takehisa MINOWA

IPC: C30B13/02 ,  C30B13/14 ,  C30B29/36 ,  C30B15/02

CPC classification number: C30B13/02 ,  C30B9/10 ,  C30B11/08 ,  C30B13/14 ,  C30B15/02 ,  C30B15/10 ,  C30B15/206 ,  C30B17/00 ,  C30B19/04 ,  C30B29/36

Abstract: In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. A metal element M (M is at least one metal element selected from at least one of a first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, a second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu and a third group consisting of Al, Ga, Ge, Sn, Pb and Zn) is added to the Si—C solution and the crucible is heated to elute Si and C, which are derived from a main component SiC of the crucible, from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution. In this way, precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution is suppressed.

Abstract translation: 在本发明中，以SiC为主要成分的坩埚用作Si-C溶液的容器。 金属元素M（M是选自由La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho和Lu组成的第一组中的至少一种中的至少一种金属元素，第二组由 Ti，V，Cr，Mn，Fe，Co，Ni和Cu以及由Al，Ga，Ge，Sn，Pb和Zn组成的第三组）加入到Si-C溶液中，将坩埚加热洗脱Si C从坩埚的与SiC-C溶液接触的高温表面区域中衍生自坩埚的主要组分SiC，进入Si-C溶液。 以这种方式，抑制与Si-C溶液接触的坩埚表面上的SiC多晶体的析出。