公开(公告)号：US20140051197A1

公开(公告)日：2014-02-20

申请号：US14064268

申请日：2013-10-28

Applicant: SemiLEDS Optoelectronics Co., Ltd.

Inventor： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

Abstract: A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a substrate; forming an epitaxial structure on the substrate; forming an electrically insulative insulation layer covering the lateral surfaces of the epitaxial structure; forming an electrically non-conductive material on the electrically insulative insulation layer; and forming a mirror on the p-doped layer, with the electrically insulative insulation layer configured to protect the epitaxial structure during formation of the mirror.

Abstract translation: 制造垂直发光二极管（VLED）晶片的方法包括以下步骤：提供衬底; 在衬底上形成外延结构; 形成覆盖所述外延结构的侧表面的电绝缘绝缘层; 在所述绝缘绝缘层上形成非导电材料; 以及在所述p掺杂层上形成反射镜，所述电绝缘绝缘层被配置为在形成所述反射镜期间保护所述外延结构。

公开(公告)号：US09343620B2

公开(公告)日：2016-05-17

申请号：US14175033

申请日：2014-02-07

Applicant: SemiLEDS Optoelectronics Co., Ltd.

Inventor： Jiunn-Yi Chu ,  Chen-Fu Chu ,  Chao-Chen Cheng

IPC: H01L21/00 ,  H01L33/06 ,  H01L33/20 ,  H01L33/38 ,  H01L33/00 ,  H01L33/40 ,  H01L33/64 ,  H01L33/10 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.

Abstract translation: 一种用于制造发光二极管管芯的方法包括以下步骤：在载体衬底上提供载体衬底并形成外延结构，该衬底包括第一类型半导体层，第一类型半导体层上的多量子阱（MQW）层，其被配置为发射 光和在多量子阱（MQW）层上的第二类型半导体层。 该方法还包括以下步骤：通过外延结构形成多个沟槽，在第二类型半导体层上形成反射层，在反射层上和沟槽中形成晶种层，并在晶种层上形成衬底， 被配置为保护外延结构的区域。

公开(公告)号：US08703515B2

公开(公告)日：2014-04-22

申请号：US13975410

申请日：2013-08-26

Applicant: SemiLEDS Optoelectronics Co., Ltd.

Inventor： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC: H01L29/06 ,  H01L29/22 ,  H01L29/26 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L31/12

CPC classification number: H01L33/14 ,  H01L27/15 ,  H01L33/38 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流流动的方法。 对于一些实施例，可以提供电流引导结构，包括相邻的高和低接触区域。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US08871547B2

公开(公告)日：2014-10-28

申请号：US14176292

申请日：2014-02-10

Applicant: SemiLEDS Optoelectronics Co., Ltd.

Inventor： Chen-Fu Chu ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Tri Doan

IPC: H01L21/20 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/16 ,  H01L33/405

Abstract: A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.

Abstract translation: 一种用于制造垂直发光二极管（VLED）结构的方法包括以下步骤：提供载体衬底，并在载体衬底上形成具有p型限制层，多量子阱（MQW）层中的半导体结构 与被配置为发射电磁辐射的p型限制层接触，以及与多量子阱（MQW）层电接触的n型约束层。 该方法还包括以下步骤：使用激光脉冲去除载体衬底以暴露n型限制层的倒置表面，并在n型限制层的表面上形成金属接触。

公开(公告)号：US20130334982A1

公开(公告)日：2013-12-19

申请号：US13975410

申请日：2013-08-26

Applicant: SemiLEDS Optoelectronics Co., Ltd.

Inventor： WEN-HUANG LIU ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC: H01L33/14

CPC classification number: H01L33/14 ,  H01L27/15 ,  H01L33/38 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流流动的方法。 对于一些实施例，可以提供电流引导结构，包括相邻的高和低接触区域。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。